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1N4934RL

Onsemi

1N4934RL by Onsemi

1N4934RL by Onsemi is a single rectifier diode with max forward voltage of 1.2V and output current of 1A. It has a reverse recovery time of 0.3us, making it suitable for applications requiring fast switching speeds in temperatures ranging from -65 to 150 °C. Its isolated case connection and axial terminal position enhance its performance in various electronic circuits.

Median Price

$0.035

Lifecycle Status

Suppliers In-Stock

28

In-Stock Inventory

1k+

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Rochester

USA . 10,000 parts In-Stock

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-

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$0.030

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$0.025

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$0.023

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$0.030

$0.025

$0.023

DigiKey

USA . 10,000 parts In-Stock

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$0.040

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$0.040

Verical

USA . 10,000 parts In-Stock

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$0.032

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Verical

USA . 10,000 parts In-Stock

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$0.038

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$0.038

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Digiode

USA . 859 parts In-Stock

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Vyrian

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American Microsemiconductor Inc.

USA . 4,750 parts In-Stock

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$0.990

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Chip Stock

USA . 62,000 parts In-Stock

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Sea View Technologies

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Bristol Electronics

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ZD Integrated Circuits Inc.

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Velocity Electronics

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Inventory MP

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Tectiva GmbH

Germany . 6,605 parts In-Stock

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Semtec, LLC

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EMSNET

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ECAB

Sweden . 4,000 parts In-Stock

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Mil-Aero Solutions, Inc.

USA . 3,982 parts In-Stock

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Corel Iberica Componentes, S.L.

Spain . 3,895 parts In-Stock

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Prism Electronics

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Standard Data Resources

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QIE Inc.

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Electronic Expediters

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Resion

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Electro Mavin

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Sensible Micro Corp

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Sensible Micro Corp

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Elcom Components

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Corphita

USA . 1,511 parts In-Stock

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Corohmni

South Africa . 102 parts In-Stock

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Native Components

USA . 716 parts In-Stock

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Northwest PG Solutions

USA . 1,889 parts In-Stock

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SupplyDigital Components

Austria . 7,498 parts In-Stock

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Problanco Electronics

Mexico . 6,567 parts In-Stock

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TANS Electronics

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Kulean Microsystems

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Glotronic Ltd.

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UHIMA Technologies

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Overview

Looking for a reliable and high-quality diode for your electronic projects? Look no further than the 1N4934RL by Onsemi. With its durable plastic/epoxy package body material and efficient single configuration, this rectifier diode is perfect for a wide range of applications. From power supplies to battery chargers, this diode offers a maximum output current of 1A and a maximum forward voltage of 1.2V, ensuring optimal performance. Trust Onsemi's reputation for excellence and choose the 1N4934RL for all your rectification needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material provides durability and protection for the diode, making it suitable for various applications.

Maximum Reverse Recovery Time: 0.3 us

The fast reverse recovery time ensures efficient operation of the diode, making it suitable for high-speed applications.

Maximum Operating Temperature: 150 °C

The high maximum operating temperature allows the diode to withstand elevated temperatures, enhancing its reliability in different environments.

Maximum Repetitive Peak Reverse Voltage: 100 V

The high reverse voltage rating makes this diode suitable for applications requiring voltage regulation or rectification.

Diode Element Material: SILICON

Silicon diodes are known for their high efficiency and reliability, making this diode a good choice for various electronic circuits.

Technical Specifications

Diodes & Rectifiers 1N4934RL attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Additional Features:

FREE WHEELING DIODE

Case Connection:

ISOLATED

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

1.2 V

JEDEC-95 Code:

DO-41

JESD-30 Code:

O-PALF-W2

JESD-609 Code:

e3

Maximum Non Repetitive Peak Forward Current:

30 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-65 Cel

Maximum Output Current:

1 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

LONG FORM

Peak Reflow Temperature (C):

260

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

100 V

Maximum Reverse Recovery Time:

.3 us

Sub-Category:

Rectifier Diodes

Surface Mount:

NO

Terminal Finish:

TIN

Terminal Form:

Terminal Position:

Trade Compliance

1N4934RL Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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