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BZV55-C15,115

NXP Semiconductors

BZV55-C15,115 by NXP Semiconductors

BZV55-C15,115 by NXP Semiconductors is a Zener diode with a 14.7V nominal reference voltage and 5% max voltage tolerance. It operates b/w -65 to 200 °C with a max power dissipation of 0.4W. Ideal for applications requiring precise voltage regulation in electronic circuits.

Median Price

$0.030

Lifecycle Status

Suppliers In-Stock

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In-Stock Inventory

1k+

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Chip1Stop

Japan . 30 parts In-Stock

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USA . 107,923 parts In-Stock

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Newark

USA . 887,018 parts In-Stock

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Verical

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EBV Elektronik

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Elektronika Sales Private Limited

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RS (Exports)

UK . 11,780 parts In-Stock

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Element14

Singapore . 8,528 parts In-Stock

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Rochester

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Bürklin Elektronik

Germany . 1,164 parts In-Stock

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Digiode

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Nova Conductors

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TME

Poland . 14,824 parts In-Stock

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NAC Semi

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IBS Electronics

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Semicontronic

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AZTECH Wire

Italy . 4,010 parts In-Stock

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Modulus Dynamics

Lithuania . 16,512 parts In-Stock

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Argo Parts USA

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Netroflash

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Advanced Electronics

New Zealand . 600 parts In-Stock

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Robosynatics

Brazil . 2,462 parts In-Stock

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Lucentia Tech

USA . 2,462 parts In-Stock

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Glotronic Ltd.

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Supply Digital

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Overview

Discover the unparalleled quality and reliability of the NXP Semiconductors BZV55-C15,115 Zener Diode. Designed with precision and expertise, this product offers superior performance and efficiency in a wide range of applications. Whether you're looking for voltage regulation or protection in your circuit design, this Zener diode delivers consistent results and peace of mind. Trust in NXP Semiconductors to provide you with the best-in-class technology that meets your needs and exceeds your expectations. Experience the difference with the BZV55-C15,115 today!

Feature Benefit Bullets

Package Body Material: GLASS

Glass package provides high durability and stability during operation, making the product reliable in varying conditions.

Working Test Current: 5 mA

Suitable working test current ensures efficient performance and longevity of the zener diode.

Maximum Reverse Current: 0.05 uA

Low maximum reverse current ensures minimal leakage and high efficiency of the diode.

Maximum Voltage Tolerance: 5 %

Tight voltage tolerance ensures precise and consistent operation in different applications.

Maximum Operating Temperature: 200 °C

Wide operating temperature range allows flexibility in usage scenarios and ensures stable performance.

Maximum Power Dissipation: 0.4 W

High maximum power dissipation capability ensures the diode can handle high power loads and maintain stability.

Diode Type: ZENER DIODE

Specifically designed as a zener diode, providing reliable voltage regulation and protection in circuits.

Technical Specifications

Zener Diodes BZV55-C15,115 attributes and parameters. Explore more Zener Diodes devices from NXP Semiconductors

Specs

Case Connection:

ISOLATED

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Dynamic Impedance:

30 ohm

JESD-30 Code:

O-LELF-R2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

200 Cel

Minimum Operating Temperature:

-65 Cel

Package Body Material:

GLASS

Package Shape:

Package Style (Meter):

LONG FORM

Peak Reflow Temperature (C):

260

Polarity:

UNIDIRECTIONAL

Maximum Power Dissipation:

.4 W

Qualification:

Not Qualified

Nominal Reference Voltage:

14.7 V

Maximum Reverse Current:

.05 uA

Sub-Category:

Voltage Reference Diodes

Surface Mount:

YES

Technology:

ZENER

Terminal Finish:

TIN

Terminal Form:

Terminal Position:

END

Maximum Time At Peak Reflow Temperature (s):

30

Maximum Voltage Temperature Coefficient:

13 mV/Cel

Maximum Voltage Tolerance:

5 %

Working Test Current:

5 mA

Trade Compliance

BZV55-C15,115 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

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