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PMN27UP,115

NXP Semiconductors

PMN27UP,115 by NXP Semiconductors

PMN27UP,115 by NXP Semiconductors is a P-channel MOSFET designed for enhancement mode applications. It supports a max drain current of 5.7 A and operates at temperatures up to 150 °C, making it ideal for power management in compact devices. Its surface mount configuration ensures efficient space utilization in electronic designs.

Median Price

$0.199

Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 48 parts In-Stock

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$0.199

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$0.165

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$0.147

48

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$0.199

$0.165

$0.147

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Digiode

USA . 3,952 parts In-Stock

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$0.079

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Chip Stock

USA . 179,000 parts In-Stock

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Vyrian

USA . 8,821 parts In-Stock

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Anansix

USA . 1,180 parts In-Stock

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ACDS - Activité Composants Distribution Service

France . 140 parts In-Stock

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Corphita

USA . 3,957 parts In-Stock

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$0.075

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Component Stockers USA

USA . 30 parts In-Stock

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$0.080

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30

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AZTECH Wire

Italy . 2,382 parts In-Stock

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$0.100

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QUARKTWIN TECHNOLOGY LTD

USA . 12,724 parts In-Stock

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A-Z Elektronik GmbH

Germany . 10,450 parts In-Stock

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Supply Digital

USA . 1,356 parts In-Stock

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UNI Independent Distributors

Spain . 1,004 parts In-Stock

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Perfect Parts

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Cyclops Electronics Ltd (Excess)

UK . 140 parts In-Stock

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Overview

Elevate your designs with the PMN27UP,115 from NXP Semiconductors, a trusted leader in innovative technology. This P-channel enhancement mode transistor combines reliability and high performance, making it perfect for diverse applications from power management to signal switching. With exceptional thermal stability and efficient power handling, it ensures robust operation even in demanding environments. Choose NXP for quality you can count on!

Feature Benefit Bullets

Polarity or Channel Type: P-CHANNEL

P-channel transistors are ideal for high-side switching applications, providing ease of integration in various circuits.

Configuration: SINGLE

A single configuration allows for straightforward design implementations and reduces complexity in circuit layout.

Surface Mount: YES

Surface mount technology enables compact designs and simpler, automated assembly processes.

Operating Mode: ENHANCEMENT MODE

Enhancement mode operation ensures lower power consumption and higher efficiency during operation.

Maximum Drain Current (Abs) (ID): 5.7 A

With a maximum drain current of 5.7 A, this transistor is suitable for driving loads effectively without overheating.

Maximum Power Dissipation (Abs): 1.38 W

A power dissipation of 1.38 W allows for adequate thermal management in various applications, enhancing reliability.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

MOS technology provides high input impedance and fast switching speeds, making it versatile for digital and analog applications.

Maximum Operating Temperature: 150 °C

The ability to operate at temperatures up to 150 °C allows this transistor to function in demanding environments.

Terminal Finish: TIN

Tin finish offers good solderability and corrosion resistance, ensuring long-term reliability in electrical connections.

Maximum Time At Peak Reflow Temperature (s): 30

This specification ensures compatibility with standard reflow soldering processes, enhancing manufacturability.

Peak Reflow Temperature °C: 260

A peak reflow temperature of 260 °C ensures that the transistor can withstand the high temperatures of lead-free soldering.

Technical Specifications

Other Function Transistors PMN27UP,115 attributes and parameters. Explore more Other Function Transistors devices from NXP Semiconductors

Specs

Configuration:

Maximum Drain Current (Abs) (ID):

5.7 A

Maximum Drain Current (ID):

5.7 A

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

TIN

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

PMN27UP,115 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

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