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PDTC123YS,126

NXP Semiconductors

PDTC123YS,126 by NXP Semiconductors

Limited Part Number Data;

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 4,346 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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10k+ parts

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4,346

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-

-

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Anansix

USA . 2,784 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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10k+ parts

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2,784

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-

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Vyrian

USA . 2,043 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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10k+ parts

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2,043

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-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

AZTECH Wire

Italy . 712 parts In-Stock

1+ parts

$11.760

100+ parts

-

1k+ parts

-

10k+ parts

-

712

$11.760

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-

-

Ampacity Inc.

Singapore . 1,629 parts In-Stock

1+ parts

$124.100

100+ parts

-

1k+ parts

-

10k+ parts

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1,629

$124.100

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-

-

One Stop Electronics

USA . 1,331 parts In-Stock

1+ parts

$237.100

100+ parts

-

1k+ parts

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10k+ parts

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1,331

$237.100

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-

-

QUARKTWIN TECHNOLOGY LTD

USA . 17,171 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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10k+ parts

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17,171

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Microchip USA

USA . 4,517 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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10k+ parts

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4,517

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UNI Independent Distributors

Spain . 3,974 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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10k+ parts

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3,974

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Corphita

USA . 730 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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10k+ parts

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730

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Technical Specifications

Additional Parts PDTC123YS,126 attributes and parameters. Explore more Additional Parts devices from NXP Semiconductors

Technical Specifications

Other Names:

934058786126
PDTC123YS AMO
PDTC123YS AMO-ND

Category:

Discrete Semiconductor Products
Transistors Bipolar (BJT) Single, Pre-Biased Bipolar Transistors

Current - Collector (Ic) (Max):

100 mA

Resistor - Base (R1):

2.2 kOhms

Vce Saturation (Max) @ Ib, Ic:

150mV @ 500µA, 10mA

Mounting Type:

Through Hole

Voltage - Collector Emitter Breakdown (Max):

50 V

Supplier Device Package:

TO-92-3

Standard Package:

2,000

Transistor Type:

NPN - Pre-Biased

Package / Case:

TO-226-3, TO-92-3 (TO-226AA) Formed Leads

Power - Max:

500 mW

Packaging:

Tape & Box (TB)

Resistor - Emitter Base (R2):

10 kOhms

Current - Collector Cutoff (Max):

1µA

DC Current Gain (hFE) (Min) @ Ic, Vce:

35 @ 5mA, 5V

Base Product Number:

PDTC123

Moisture Sensitivity Level (MSL):

1 (Unlimited)

Trade Compliance

PDTC123YS,126 Miscellaneous Components trade compliance attributes, and parameters.

ECCN

EAR99

HTS

8541.21.0095

PCN

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

Authentic purchasing experiences

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