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NZX5V6A,143

NXP Semiconductors

NZX5V6A,143 by NXP Semiconductors

NZX5V6A,143 by NXP Semiconductors is a unidirectional Zener diode with a nominal reference voltage of 5.35 V and a max power dissipation of 0.5 W. It features an isolated case connection and operates at temperatures up to 175 °C. Ideal for voltage regulation in electronic circuits.

Median Price

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Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

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Vyrian

USA . 2,533 parts In-Stock

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Digiode

USA . 1,592 parts In-Stock

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Anansix

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One Stop Electronics

USA . 991 parts In-Stock

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$0.010

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991

$0.010

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AZTECH Wire

Italy . 9,015 parts In-Stock

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$4.820

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UNI Independent Distributors

Spain . 7,591 parts In-Stock

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Corphita

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Supply Digital

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Overview

Unlock unparalleled reliability and performance with the NZX5V6A,143 Zener Diode from NXP Semiconductors. Renowned for their exceptional quality and innovation, NXP delivers a diode perfect for stabilizing voltage in a variety of applications, from power supplies to signal processing. Experience reduced noise, enhanced efficiency, and robust temperature capabilities, ensuring your projects thrive under demanding conditions. Elevate your designs with trusted technology that drives success!

Feature Benefit Bullets

Package Body Material: CERAMIC, GLASS-SEALED

The ceramic and glass-sealed body material provides excellent thermal stability and protection against environmental factors, enhancing the durability and reliability of the Zener diode.

Config: SINGLE

A single configuration allows for straightforward integration into various electronic circuits, making it versatile for a range of applications.

Working Test Current: 5 mA

The working test current of 5 mA ensures a balance between performance and efficiency, making it suitable for diverse electronic components without excessive power consumption.

Package Shape: ROUND

The round package shape can facilitate easier placement in PCB layouts, contributing to design flexibility and efficient space utilization.

No. of Terminals: 2

Having only two terminals simplifies the assembly process and allows for easier circuit design, which can save time and reduce production costs.

Package Style (Meter): LONG FORM

The long form package style provides a unique form factor that may be beneficial for specific applications requiring extended lengths or unique mounting arrangements.

Maximum Voltage Tolerance: 2.8 %

The low maximum voltage tolerance indicates precise voltage regulation, making this diode an excellent choice for applications requiring tight voltage control.

Maximum Operating Temperature: 175 °C

With a high maximum operating temperature of 175 °C, this Zener diode can function effectively in high-temperature environments, expanding its usability in demanding applications.

Terminal Position: AXIAL

Axial terminal positions are advantageous for through-hole mounting, providing ease of installation and better mechanical stability in a circuit.

Case Connection: ISOLATED

An isolated case connection ensures that the diode operates safely in sensitive circuits, preventing unwanted current paths and enhancing overall circuit safety.

Maximum Power Dissipation: 0.5 W

With a maximum power dissipation of 0.5 W, this diode efficiently manages heat, which is crucial for prolonging its lifespan and maintaining reliability in the circuit.

Diode Type: ZENER DIODE

As a Zener diode, it is designed for voltage regulation, making it a critical component for providing stable reference voltages in various electronic devices.

Nominal Reference Voltage: 5.35 V

The nominal reference voltage of 5.35 V is ideal for low-voltage applications, delivering reliable performance in voltage regulation and protection circuits.

Technology: ZENER

The Zener technology ensures precise voltage regulation and protects sensitive components from voltage spikes, making it essential for safeguarding electronic circuitry.

Terminal Form: WIRE

Wire terminals allow for flexible connections, making installation in various applications easier, particularly in prototyping and custom setups.

Polarity: UNIDIRECTIONAL

The unidirectional nature of this diode is suitable for controlling current flow in one direction, vital for applications focused on regulation and protection.

Diode Element Material: SILICON

Silicon as the diode element material ensures good electrical properties and reliable performance in both high- and low-temperature conditions, favoring a wide range of electronic applications.

Technical Specifications

Zener Diodes NZX5V6A,143 attributes and parameters. Explore more Zener Diodes devices from NXP Semiconductors

Specs

Case Connection:

ISOLATED

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

JESD-30 Code:

O-GALF-W2

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

175 Cel

Package Body Material:

CERAMIC, GLASS-SEALED

Package Shape:

Package Style (Meter):

LONG FORM

Polarity:

UNIDIRECTIONAL

Maximum Power Dissipation:

.5 W

Qualification:

Not Qualified

Nominal Reference Voltage:

5.35 V

Surface Mount:

NO

Technology:

ZENER

Terminal Form:

Terminal Position:

Maximum Voltage Tolerance:

2.8 %

Working Test Current:

5 mA

Trade Compliance

NZX5V6A,143 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

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