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BZX84-C33,215

NXP Semiconductors

BZX84-C33,215 by NXP Semiconductors

NXP Semiconductors' BZX84-C33,215 Zener Diode has a 33V nominal reference voltage with a max reverse current of 0.05 uA. It operates in temperatures ranging from -65 to 150 °C and has a max power dissipation of 0.25 W. Ideal for applications requiring precise voltage regulation in compact electronic devices.

Median Price

$0.029

Lifecycle Status

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31

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1k+

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Arrow

USA . 1,610 parts In-Stock

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Farnell

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Rochester

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Verical

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DigiKey

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Elektronika Sales Private Limited

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TTI

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Chip1Stop

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Element14

Singapore . 2,800 parts In-Stock

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Digiode

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Nova Conductors

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NAC Semi

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DigiKey Marketplace

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Chip Stock

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Sensible Micro Corp

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IBS Electronics

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Dan-Mar Components

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Semicontronic

India . 377,926 parts In-Stock

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Ampacity Inc.

Singapore . 375,798 parts In-Stock

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Corphita

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AZTECH Wire

Italy . 11,208 parts In-Stock

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Aztec Data Supply Inc.

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Corohmni

South Africa . 876 parts In-Stock

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Advanced Electronics

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Microchip USA

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Continental Prestige Electronics

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Perfect Parts

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iodParts Technologies Inc.

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Glotronic Ltd.

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Overview

Unlock the power of precision with the NXP Semiconductors BZX84-C33,215 Zener Diode. Designed for reliability and performance, this small outline diode offers a nominal reference voltage of 33V and a maximum reverse current of 0.05 uA. Ideal for a wide range of applications, this diode provides customers with unparalleled value and efficiency. Trust in NXP Semiconductors to deliver cutting-edge technology that meets your needs with quality and precision.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides good durability and protection for the zener diode, making it suitable for various applications.

Working Test Current: 2 mA

The low working test current ensures energy efficiency and proper functionality of the zener diode.

Surface Mount: YES

Being surface mountable allows for easy and efficient PCB assembly, saving time and effort.

Maximum Reverse Current: 0.05 uA

The low maximum reverse current ensures minimal power loss and improves the overall performance of the zener diode.

Maximum Operating Temperature: 150 °C

The high maximum operating temperature allows for use in harsh environments without compromising performance.

Diode Type: ZENER DIODE

Being a zener diode, it has a specific breakdown voltage which makes it ideal for voltage regulation applications.

Technical Specifications

Zener Diodes BZX84-C33,215 attributes and parameters. Explore more Zener Diodes devices from NXP Semiconductors

Specs

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Dynamic Impedance:

80 ohm

JEDEC-95 Code:

TO-236AB

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-65 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity:

UNIDIRECTIONAL

Maximum Power Dissipation:

.25 W

Qualification:

Not Qualified

Nominal Reference Voltage:

33 V

Maximum Reverse Current:

.05 uA

Sub-Category:

Voltage Reference Diodes

Surface Mount:

YES

Technology:

ZENER

Terminal Finish:

TIN

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Maximum Voltage Temperature Coefficient:

33.4 mV/Cel

Maximum Voltage Tolerance:

5 %

Working Test Current:

2 mA

Trade Compliance

BZX84-C33,215 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

PCN

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

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