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BZV55-C18,115

NXP Semiconductors

BZV55-C18,115 by NXP Semiconductors

BZV55-C18,115 by NXP Semiconductors is a Zener diode with a 17.95 V nominal reference voltage and 5% max voltage tolerance. It operates b/w -65 to 200 °C and has a max power dissipation of 0.4 W. Ideal for applications requiring precise voltage regulation in electronic circuits.

Median Price

$0.062

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32

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1k+

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DigiKey

USA . 24,148 parts In-Stock

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Mouser Electronics

USA . 12,354 parts In-Stock

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Newark

USA . 109 parts In-Stock

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Rochester

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Verical

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Avnet

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EBV Elektronik

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Element14

Singapore . 29,848 parts In-Stock

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Chip1Stop

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Future Electronics

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Digiode

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Nova Conductors

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TME

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Maritex

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Component Electronics Inc.

Canada . 500 parts In-Stock

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IBS Electronics

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NAC Semi

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Semicontronic

India . 601,466 parts In-Stock

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Ampacity Inc.

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Netroflash

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Advanced Electronics

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Component Stockers USA

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Aztec Data Supply Inc.

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Perfect Parts

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Lucentia Tech

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Overview

Elevate your electronic designs with the BZV55-C18,115 Zener Diode by NXP Semiconductors. Crafted with precision and reliability, this diode offers superior performance in a variety of applications. With a maximum voltage tolerance of 5% and a nominal reference voltage of 17.95 V, this diode delivers consistent and accurate results. Whether you're working on power supplies, voltage regulation, or signal conditioning, the BZV55-C18,115 provides unmatched value and efficiency. Trust NXP Semiconductors to bring you cutting-edge technology that meets your needs.

Feature Benefit Bullets

Package Body Material: GLASS

Glass package provides excellent thermal resistance and mechanical durability, making the product suitable for high temperature environments.

Working Test Current: 5 mA

Higher working test current allows for more stable and reliable operation of the diode in various applications.

Maximum Reverse Current: 0.05 uA

Low maximum reverse current ensures minimal leakage and improves overall efficiency of the diode.

Maximum Voltage Tolerance: 5 %

Tighter voltage tolerance ensures consistent performance across different units and applications.

Maximum Power Dissipation: 0.4 W

Higher maximum power dissipation enables the diode to handle greater power loads without compromising performance.

Nominal Reference Voltage: 17.95 V

Precise nominal reference voltage allows for accurate voltage regulation in electrical circuits.

Technical Specifications

Zener Diodes BZV55-C18,115 attributes and parameters. Explore more Zener Diodes devices from NXP Semiconductors

Specs

Case Connection:

ISOLATED

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Dynamic Impedance:

45 ohm

JESD-30 Code:

O-LELF-R2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

200 Cel

Minimum Operating Temperature:

-65 Cel

Package Body Material:

GLASS

Package Shape:

Package Style (Meter):

LONG FORM

Peak Reflow Temperature (C):

260

Polarity:

UNIDIRECTIONAL

Maximum Power Dissipation:

.4 W

Qualification:

Not Qualified

Nominal Reference Voltage:

17.95 V

Maximum Reverse Current:

.05 uA

Sub-Category:

Voltage Reference Diodes

Surface Mount:

YES

Technology:

ZENER

Terminal Finish:

TIN

Terminal Form:

Terminal Position:

END

Maximum Time At Peak Reflow Temperature (s):

30

Maximum Voltage Temperature Coefficient:

16 mV/Cel

Maximum Voltage Tolerance:

5 %

Working Test Current:

5 mA

Trade Compliance

BZV55-C18,115 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

PCN

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

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