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BZG03-C18T/R

NXP Semiconductors

BZG03-C18T/R by NXP Semiconductors

NXP Semiconductors' BZG03-C18T/R Zener Diode has a 25 mA test current, 1 uA reverse current, and 18 V nominal reference voltage. It is used in applications requiring precise voltage regulation in a compact small outline package for temperatures ranging from -65 to 175 °C.

Median Price

$0.312

Lifecycle Status

Suppliers In-Stock

16

In-Stock Inventory

1k+

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Nova Conductors

Japan . 518 parts In-Stock

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Martec Srl

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Digiode

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North Shore Components

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ComSIT Distribution GmbH

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Vyrian

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PC Components Company LLC

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LIBRA Elektronik GmbH

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Bristol Electronics

USA . 196 parts In-Stock

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Dan-Mar Components

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Anansix

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One Stop Electronics

USA . 819 parts In-Stock

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Aztec Data Supply Inc.

USA . 4,241 parts In-Stock

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Corohmni

South Africa . 264 parts In-Stock

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Bastille Electronics

Australia . 244 parts In-Stock

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Continental Prestige Electronics

USA . 13,840 parts In-Stock

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Argo Parts USA

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Ampacity Inc.

Singapore . 2,504 parts In-Stock

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AZTECH Wire

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Metaverse IC Inc.

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Glotronic Ltd.

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Netroflash

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Cyclops Electronics Ltd (Excess)

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Overview

Looking for a reliable and high-quality Zener diode for your electronic projects? Look no further than the BZG03-C18T/R by NXP Semiconductors! With a reputation for excellence in semiconductor manufacturing, NXP delivers top-of-the-line products that are trusted by professionals worldwide. This Zener diode is perfect for voltage regulation and protection applications, offering a nominal reference voltage of 18V and a maximum power dissipation of 1.25W. Trust NXP to provide the quality and performance you need for your next project.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

PLASTIC/EPOXY material provides good insulation and protection, making the product durable and reliable.

Working Test Current: 25 mA

Suitable working test current ensures stability and reliability in various circuit applications.

Surface Mount: YES

Surface mount capability makes installation easier and saves space on the circuit board.

Maximum Reverse Current: 1 uA

Low maximum reverse current ensures minimal leakage, improving circuit efficiency.

Maximum Operating Temperature: 175 °C

High maximum operating temperature ensures reliable performance in demanding environments.

Minimum Operating Temperature: -65 °C

Wide range of minimum operating temperature allows for flexibility in various operating conditions.

Maximum Power Dissipation: 1.25 W

High power dissipation capability ensures the diode can handle high power applications without overheating.

Nominal Reference Voltage: 18 V

Stable and accurate reference voltage of 18 V makes this diode suitable for precision circuit applications.

Polarity: UNIDIRECTIONAL

Unidirectional polarity ensures that current flows in only one direction, providing protection for sensitive components.

Technical Specifications

Zener Diodes BZG03-C18T/R attributes and parameters. Explore more Zener Diodes devices from NXP Semiconductors

Specs

Additional Features:

LOW LEAKAGE CURRENT

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

JEDEC-95 Code:

DO-214AC

JESD-30 Code:

R-PDSO-C2

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

175 Cel

Minimum Operating Temperature:

-65 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Polarity:

UNIDIRECTIONAL

Maximum Power Dissipation:

1.25 W

Qualification:

Not Qualified

Nominal Reference Voltage:

18 V

Maximum Reverse Current:

1 uA

Surface Mount:

YES

Technology:

ZENER

Terminal Form:

Terminal Position:

Maximum Voltage Temperature Coefficient:

19.8 mV/Cel

Maximum Voltage Tolerance:

6.41 %

Working Test Current:

25 mA

Trade Compliance

BZG03-C18T/R Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

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