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BAV99W,135

NXP Semiconductors

BAV99W,135 by NXP Semiconductors

BAV99W,135 by NXP Semiconductors is a series connected diode with 2 elements. It has a max reverse recovery time of 0.004 us and can handle a max output current of 0.15 A. Ideal for rectification applications in electronics due to its low forward voltage and high repetitive peak reverse voltage capabilities.

Median Price

$0.029

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22

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1k+

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Adafruit Industries

USA . 200 parts In-Stock

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$0.043

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$0.043

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DigiKey

USA . 61,350 parts In-Stock

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$0.130

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$0.050

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$0.031

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$0.021

61,350

$0.130

$0.050

$0.031

$0.021

Mouser Electronics

USA . 348,384 parts In-Stock

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$0.270

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$0.063

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$0.036

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$0.023

348,384

$0.270

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$0.023

Future Electronics

Canada . 2,850,000 parts In-Stock

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EBV Elektronik

Germany . 1,930,000 parts In-Stock

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Avnet

USA . 800,000 parts In-Stock

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$0.031

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Rochester

USA . 60,000 parts In-Stock

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$0.027

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TTI

USA . 50,000 parts In-Stock

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Arrow

USA . 49,937 parts In-Stock

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Verical

USA . 49,937 parts In-Stock

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Chip1Stop

Japan . 765 parts In-Stock

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Digiode

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Nova Conductors

Japan . 300 parts In-Stock

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IBS Electronics

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NAC Semi

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Chip Stock

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LIBRA Elektronik GmbH

Germany . 12,406 parts In-Stock

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ComSIT Distribution GmbH

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VNN

France . 4,645 parts In-Stock

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Vyrian

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Anansix

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Prism Electronics

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Ampacity Inc.

Singapore . 310,885 parts In-Stock

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$0.009

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Semicontronic

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Corphita

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Continental Prestige Electronics

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Argo Parts USA

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Netroflash

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Modulus Dynamics

Lithuania . 900 parts In-Stock

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Corohmni

South Africa . 102 parts In-Stock

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Advanced Electronics

New Zealand . 200 parts In-Stock

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Aztec Data Supply Inc.

USA . 4,571 parts In-Stock

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Perfect Parts

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Eastek

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GreenTree Electronics

Israel . 10,000 parts In-Stock

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UNI Independent Distributors

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Supply Digital

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Robosynatics

Brazil . 100 parts In-Stock

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Lucentia Tech

USA . 100 parts In-Stock

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$1.653

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$1.653

Overview

Experience exceptional quality and reliability with the NXP Semiconductors BAV99W,135 diode rectifier. Designed for a wide range of applications, this series connected, center tap diode offers fast reverse recovery time and low reverse current for optimal performance. With a maximum reverse voltage of 100V and a maximum forward voltage of 1.25V, this small outline package is perfect for your electronic projects. Trust NXP Semiconductors for cutting-edge technology and superior products that deliver value and benefits to our customers. Elevate your designs with the BAV99W,135 diode rectifier today!

Feature Benefit Bullets

Package Body Material:

PLASTIC/EPOXY - Durable and lightweight material for long-lasting performance.

Config:

SERIES CONNECTED, CENTER TAP - Allows for efficient voltage regulation and control.

Surface Mount:

YES - Easy to install and saves space on circuit boards.

Maximum Reverse Recovery Time:

0.004 us - Ensures quick and reliable switching between forward and reverse bias.

Maximum Reverse Current:

0.5 uA - Low leakage current for energy efficiency.

Package Shape:

RECTANGULAR - Compact design for easy integration into circuits.

Reverse Test Voltage:

80 V - Provides a high level of reverse voltage protection.

No. of Terminals:

3 - Allows for easy connection to other components.

Package Style (Meter):

SMALL OUTLINE - Saves space in electronic devices.

Maximum Operating Temperature:

150 °C - Suitable for a wide range of operating environments.

Minimum Operating Temperature:

65 °C - Can withstand extreme cold temperatures.

Terminal Finish:

TIN - Corrosion-resistant finish for long-term reliability.

Terminal Position:

DUAL - Offers flexibility in installation options.

Maximum Power Dissipation:

0.2 W - Handles high power levels without overheating.

Maximum Time At Peak Reflow Temperature (s):

30 - Ensures proper soldering during installation.

Peak Reflow Temperature °C:

260 - Withstands high temperatures during manufacturing processes.

Diode Type:

RECTIFIER DIODE - Efficiently converts AC to DC voltage.

Maximum Forward Voltage (VF):

1.25 V - Low voltage drop for efficient power conversion.

Maximum Output Current:

0.15 A - Handles moderate current loads with ease.

Terminal Form:

GULL WING - Facilitates easy soldering in manufacturing processes.

No. of Elements:

2 - Provides redundancy for added reliability.

Maximum Repetitive Peak Reverse Voltage:

100 V - Offers high reverse voltage protection.

Maximum Non Repetitive Peak Forward Current:

4 A - Can handle short bursts of high current safely.

Diode Element Material:

SILICON - High-quality material for efficient diode performance.

Technical Specifications

Diodes & Rectifiers BAV99W,135 attributes and parameters. Explore more Diodes & Rectifiers devices from NXP Semiconductors

Specs

Config:

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

1.25 V

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Forward Current:

4 A

No. of Elements:

2

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-65 Cel

Maximum Output Current:

.15 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Maximum Power Dissipation:

.2 W

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

100 V

Maximum Reverse Current:

.5 uA

Maximum Reverse Recovery Time:

.004 us

Reverse Test Voltage:

80 V

Sub-Category:

Rectifier Diodes

Surface Mount:

YES

Terminal Finish:

TIN

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

BAV99W,135 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.70

SB

8541.10.00.70

PCN

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

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