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BAV70W,135

NXP Semiconductors

BAV70W,135 by NXP Semiconductors

NXP Semiconductors' BAV70W,135 diode features a common cathode configuration with 2 elements. It has a max reverse recovery time of 0.004 us and can handle a max forward voltage of 1.25 V. Ideal for rectification applications in electronic circuits due to its small outline package style and high operating temperature of 150 °C.

Median Price

$0.022

Lifecycle Status

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Mouser Electronics

USA . 16,469 parts In-Stock

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Rochester

USA . 300,000 parts In-Stock

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Verical

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Digiode

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Nova Conductors

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TME

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Flip Electronics

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NAC Semi

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IBS Electronics

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ComSIT Distribution GmbH

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Ampacity Inc.

Singapore . 24,381 parts In-Stock

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Corphita

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Component Stockers USA

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Corohmni

South Africa . 1,140 parts In-Stock

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Modulus Dynamics

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Perfect Parts

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Overview

Experience the superior quality and reliability of NXP Semiconductors with the BAV70W,135 diode rectifier. This common cathode diode element offers fast reverse recovery time and low reverse current, making it ideal for a wide range of applications. Whether you're designing consumer electronics, automotive systems, or industrial equipment, this small outline package with gull wing terminals delivers exceptional performance and efficiency. Trust NXP Semiconductors to provide cutting-edge technology that meets your needs and exceeds your expectations. Elevate your projects with the BAV70W,135 diode rectifier today.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material makes the diode durable and resistant to external factors, ensuring a longer lifespan.

Config: COMMON CATHODE, 2 ELEMENTS

The common cathode configuration enables easy circuit design and the use of multiple diodes in parallel for higher current applications.

Surface Mount: YES

This feature allows for easy and efficient PCB assembly, saving time and effort during manufacturing.

Maximum Reverse Recovery Time: 0.004 us

With a fast reverse recovery time, this diode is ideal for high frequency applications where quick switching times are required.

Maximum Reverse Current: 2.5 uA

The low reverse current ensures minimal power loss and high efficiency in the circuit.

Package Shape: RECTANGULAR

The rectangular shape of the package offers a compact design, saving space on the PCB.

No. of Terminals: 3

The three terminals provide flexibility in circuit connections and allow for different configurations.

Package Style (Meter): SMALL OUTLINE

The small outline package style makes it suitable for applications where space is limited.

Maximum Operating Temperature: 150 °C

With a high operating temperature range, this diode can withstand harsh environmental conditions.

Terminal Finish: TIN

The tin finish on the terminals ensures good conductivity and corrosion resistance.

Terminal Position: DUAL

The dual terminal position allows for easy integration into various circuit layouts.

Maximum Power Dissipation: 0.2 W

This diode can handle high power levels without overheating, making it reliable for heavy-duty applications.

Maximum Time At Peak Reflow Temperature (s): 30

The short reflow time ensures quick and efficient soldering during manufacturing.

Peak Reflow Temperature °C: 260

The high peak reflow temperature can withstand the rigors of the soldering process without damage.

Diode Type: RECTIFIER DIODE

As a rectifier diode, this product is specifically designed for converting AC to DC power efficiently.

Maximum Forward Voltage (VF): 1.25 V

The low forward voltage drop minimizes power loss and enhances the efficiency of the diode.

Maximum Output Current: 0.1 A

With a high output current rating, this diode can handle moderate to high power loads.

Terminal Form: GULL WING

The gull wing terminal form allows for easy soldering and secure connection to the PCB.

No. of Elements: 2

With two diode elements, this product is versatile and can be used in various circuit configurations.

Maximum Repetitive Peak Reverse Voltage: 100 V

This diode can withstand high reverse voltages, making it suitable for demanding applications.

Maximum Non Repetitive Peak Forward Current: 4 A

The high peak forward current rating ensures the diode can handle short-term surges without damage.

Diode Element Material: SILICON

Made of silicon, this diode offers excellent performance and reliability in a wide range of applications.

Technical Specifications

Diodes & Rectifiers BAV70W,135 attributes and parameters. Explore more Diodes & Rectifiers devices from NXP Semiconductors

Specs

Config:

COMMON CATHODE, 2 ELEMENTS

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

1.25 V

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Forward Current:

4 A

No. of Elements:

2

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Maximum Output Current:

.1 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Maximum Power Dissipation:

.2 W

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

100 V

Maximum Reverse Current:

2.5 uA

Maximum Reverse Recovery Time:

.004 us

Sub-Category:

Rectifier Diodes

Surface Mount:

YES

Terminal Finish:

TIN

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

BAV70W,135 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.70

SB

8541.10.00.70

PCN

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

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