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BAV70S,115

NXP Semiconductors

BAV70S,115 by NXP Semiconductors

BAV70S,115 by NXP Semiconductors is a diode with 2 elements in a common cathode configuration. It has a max reverse recovery time of 0.004 us and can handle a max reverse current of 2.5 uA. This small outline rectifier diode is suitable for applications requiring a peak repetitive reverse voltage of up to 100 V, such as in electronic circuits and power supplies.

Median Price

$0.052

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Supply Digital

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Overview

Discover the superior quality and reliability of the NXP Semiconductors BAV70S,115 diodes & rectifiers. With a package body material of PLASTIC/EPOXY and a maximum reverse test voltage of 75V, this product is designed for optimal performance and durability. Ideal for a range of applications, this diode offers a quick maximum reverse recovery time of 0.004 us and a maximum forward voltage of 1.3V. Trust in NXP Semiconductors to deliver top-notch technology that meets your needs, providing value and benefits to customers seeking high-quality components for their projects.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material offers durability and protection for the diodes, making them suitable for a variety of applications.

Config: 2 BANKS, COMMON CATHODE, 2 ELEMENTS

This configuration allows for efficient current regulation and performance in applications requiring precise control.

Surface Mount: YES

Being surface mountable makes these diodes easy to integrate into circuit boards, saving space and simplifying assembly.

Maximum Reverse Recovery Time: 0.004 us

The quick reverse recovery time ensures fast switching and low power loss, enhancing the efficiency of the diodes.

Maximum Reverse Current: 2.5 uA

The low reverse current minimizes power wastage and improves the overall performance of the diodes in circuits.

Package Shape: RECTANGULAR

The rectangular shape of the package provides a standardized form factor for easy integration into various electronic devices.

Reverse Test Voltage: 75 V

The high reverse test voltage offers protection against reverse currents, ensuring the safety and reliability of the diodes.

No. of Terminals: 6

Having six terminals allows for versatile connectivity options, enabling the diodes to be used in a wide range of circuit configurations.

Terminal Finish: TIN

The tin terminal finish provides a reliable contact surface for soldering, ensuring secure connections in electronic assemblies.

Maximum Operating Temperature: 150 °C

The high operating temperature range allows for the diodes to withstand elevated temperatures without performance degradation.

Minimum Operating Temperature: -65 °C

The low minimum operating temperature ensures the diodes can function properly in cold environments or during temperature fluctuations.

Terminal Position: DUAL

Dual terminal positions offer flexibility in circuit design, allowing for multiple connection options depending on the application requirements.

Maximum Power Dissipation: 0.35 W

The high power dissipation rating enables the diodes to handle significant power loads without overheating or failing.

Maximum Time At Peak Reflow Temperature: 30 s

This specification indicates the maximum time the diodes can be exposed to peak reflow temperatures during soldering, ensuring reliability during assembly processes.

Peak Reflow Temperature: 260 C

The high peak reflow temperature capability allows for proper soldering of the diodes onto circuit boards, ensuring secure connections.

Diode Type: RECTIFIER DIODE

Being a rectifier diode, this product is specifically designed for converting AC to DC current, making it suitable for power supply applications.

Maximum Forward Voltage (VF): 1.3 V

The low forward voltage drop of 1.3 V minimizes power loss and enhances the efficiency of the diodes in forwarding current.

Maximum Output Current: 0.1 A

With a maximum output current of 0.1 A, these diodes are ideal for low to medium power applications where controlled current flow is required.

Terminal Form: GULL WING

The gull wing terminal form provides a secure mechanical connection for the diodes, ensuring stability and reliability in electronic assemblies.

No. of Elements: 4

Having four diode elements allows for increased current handling capacity and redundancy, ensuring reliable operation in demanding applications.

Maximum Repetitive Peak Reverse Voltage: 100 V

The high repetitive peak reverse voltage rating ensures the diodes can withstand sudden voltage spikes or reversals without damage.

Diode Element Material: SILICON

Silicon diode elements offer high efficiency, low leakage current, and temperature stability, making them a reliable choice for various electronic applications.

Technical Specifications

Diodes & Rectifiers BAV70S,115 attributes and parameters. Explore more Diodes & Rectifiers devices from NXP Semiconductors

Specs

Config:

2 BANKS, COMMON CATHODE, 2 ELEMENTS

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

1.3 V

JESD-30 Code:

R-PDSO-G6

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

4

No. of Terminals:

6

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-65 Cel

Maximum Output Current:

.1 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Maximum Power Dissipation:

.35 W

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

100 V

Maximum Reverse Current:

2.5 uA

Maximum Reverse Recovery Time:

.004 us

Reverse Test Voltage:

75 V

Sub-Category:

Signal Diodes

Surface Mount:

YES

Terminal Finish:

TIN

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

BAV70S,115 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.70

SB

8541.10.00.70

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

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