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BAV199W,115

NXP Semiconductors

BAV199W,115 by NXP Semiconductors

BAV199W,115 by NXP Semiconductors is a series connected diode with 3 terminals. It has a max reverse recovery time of 3 us and can handle up to 85V peak reverse voltage. This rectifier diode is ideal for applications requiring low forward voltage drop and high current output in small outline packages.

Median Price

$0.121

Lifecycle Status

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32

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1k+

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Chip1Stop

Japan . 6,008 parts In-Stock

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DigiKey

USA . 6 parts In-Stock

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$0.190

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$0.071

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$0.046

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6

$0.190

$0.071

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Mouser Electronics

USA . 3,242 parts In-Stock

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$0.250

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$0.090

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$0.056

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Newark

USA . 12,305 parts In-Stock

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TTI

USA . 126,000 parts In-Stock

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EBV Elektronik

Germany . 87,000 parts In-Stock

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Future Electronics

Canada . 81,000 parts In-Stock

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Element14

Singapore . 13,695 parts In-Stock

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$0.196

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Arrow

USA . 4,045 parts In-Stock

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Verical

USA . 4,045 parts In-Stock

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RS (Exports)

UK . 3,300 parts In-Stock

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Rochester

USA . 1,221 parts In-Stock

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Digiode

USA . 4,866 parts In-Stock

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Nova Conductors

Japan . 450 parts In-Stock

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$0.076

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$0.076

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TME

Poland . 797 parts In-Stock

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$0.069

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NAC Semi

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IBS Electronics

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Chip Stock

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Sensible Micro Corp

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Cyclops Electronics Ltd

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Greenchips

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Micros

Poland . 3,000 parts In-Stock

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Partservice

France . 3,000 parts In-Stock

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Micros sp.j. W. Kędra i J. Lic

Poland . 3,000 parts In-Stock

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LIBRA Elektronik GmbH

Germany . 2,527 parts In-Stock

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Bristol Electronics

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Rebound Electronics

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Ampacity Inc.

Singapore . 72,674 parts In-Stock

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Semicontronic

India . 69,767 parts In-Stock

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Corphita

USA . 3,823 parts In-Stock

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AZTECH Wire

Italy . 7,528 parts In-Stock

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Argo Parts USA

USA . 395 parts In-Stock

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Netroflash

USA . 500 parts In-Stock

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Corohmni

South Africa . 920 parts In-Stock

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Advanced Electronics

New Zealand . 70 parts In-Stock

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Aztec Data Supply Inc.

USA . 2,918 parts In-Stock

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GreenTree Electronics

Israel . 4,056,000 parts In-Stock

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Eastek

USA . 3,984,000 parts In-Stock

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Perfect Parts

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QUARKTWIN TECHNOLOGY LTD

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Robosynatics

Brazil . 22,183 parts In-Stock

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Lucentia Tech

USA . 22,183 parts In-Stock

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Glotronic Ltd.

UK . 21,600 parts In-Stock

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Lixinc

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Authorized Procurement Solutions

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Supply Digital

USA . 1,279 parts In-Stock

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UNI Independent Distributors

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ChipTracer

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Continental Prestige Electronics

USA . 934 parts In-Stock

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Overview

Power up your projects with the BAV199W,115 by NXP Semiconductors. This high-quality diode offers reliable performance and durability, making it ideal for a wide range of applications. Whether you're designing electronics for automotive, industrial, or consumer use, this diode's fast reverse recovery time and low forward voltage ensure efficient operation. Trust NXP Semiconductors to deliver top-notch components that meet your needs and exceed your expectations. Choose the BAV199W,115 for unmatched value and performance in every project.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the diodes, ensuring a longer lifespan.

Config: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS

Allows for efficient energy conversion and utilization.

Surface Mount: YES

Facilitates easy and convenient installation on circuit boards.

Maximum Reverse Recovery Time: 3 us

Ensures fast and efficient switching performance.

Package Shape: RECTANGULAR

Enables a compact design, saving space in electronic devices.

No. of Terminals: 3

Provides multiple connection points for versatility in circuit design.

Package Style (Meter): SMALL OUTLINE

Ideal for applications where space is a premium.

Maximum Operating Temperature: 150 °C

Suitable for a wide range of operating environments.

Terminal Finish: TIN

Offers good conductivity and corrosion resistance.

Terminal Position: DUAL

Allows for flexible positioning on the circuit board.

Maximum Power Dissipation: 0.15 W

Can handle moderate power levels efficiently.

Maximum Time At Peak Reflow Temperature (s): 30

Ensures reliable soldering during assembly.

Peak Reflow Temperature °C: 260

Can withstand high-temperature reflow processes.

Diode Type: RECTIFIER DIODE

Designed specifically for rectification applications.

Maximum Forward Voltage (VF): 1.25 V

Low forward voltage drop for efficient energy conversion.

Maximum Output Current: 0.14 A

Suitable for low to moderate current applications.

Terminal Form: GULL WING

Facilitates easy soldering and secure connection.

No. of Elements: 2

Provides redundancy and ensures reliable operation.

Maximum Repetitive Peak Reverse Voltage: 85 V

Can handle moderate reverse voltage levels.

Maximum Non Repetitive Peak Forward Current: 4 A

Capable of handling short-term high current surges.

Diode Element Material: SILICON

Silicon diodes have good electrical characteristics and reliability.

Technical Specifications

Diodes & Rectifiers BAV199W,115 attributes and parameters. Explore more Diodes & Rectifiers devices from NXP Semiconductors

Specs

Additional Features:

LOW LEAKAGE CURRENT

Config:

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

1.25 V

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Forward Current:

4 A

No. of Elements:

2

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Maximum Output Current:

.14 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Maximum Power Dissipation:

.15 W

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

85 V

Maximum Reverse Recovery Time:

3 us

Sub-Category:

Rectifier Diodes

Surface Mount:

YES

Terminal Finish:

TIN

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

BAV199W,115 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.70

SB

8541.10.00.70

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

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