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BAT54VV/A2,115

NXP Semiconductors

BAT54VV/A2,115 by NXP Semiconductors

BAT54VV/A2,115 by NXP Semiconductors is a surface mount diode with 25V reverse test voltage and 2uA max reverse current. It operates b/w -65°C to 125°C, dissipating up to 0.17W power. Ideal for applications requiring low forward voltage (0.24V) and repetitive peak reverse voltage of 30V.

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Chip Stock

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Digiode

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Vyrian

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Nova Conductors

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Semicontronic

India . 1,506 parts In-Stock

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One Stop Electronics

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Corohmni

South Africa . 234 parts In-Stock

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Aztec Data Supply Inc.

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Advanced Electronics

New Zealand . 350 parts In-Stock

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Ampacity Inc.

Singapore . 819 parts In-Stock

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AZTECH Wire

Italy . 472 parts In-Stock

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Overview

Discover the superior quality and reliability of the BAT54VV/A2,115 by NXP Semiconductors. As a leader in semiconductor technology, NXP delivers cutting-edge solutions for various applications. This surface-mount diode offers low reverse current and high reverse test voltage, making it ideal for a wide range of electronic devices. Trust NXP to provide top-notch performance and durability, ensuring your projects run smoothly and efficiently. Upgrade to the BAT54VV/A2,115 today and experience the difference in quality and value that NXP Semiconductors brings to the table.

Feature Benefit Bullets

Surface Mount: YES

Surface mount diodes are compact and easy to integrate onto circuit boards, making them ideal for applications with limited space.

Maximum Reverse Current: 2 uA

Low reverse current ensures minimal power loss and allows for efficient operation of the diode.

Reverse Test Voltage: 25 V

With a high reverse test voltage, this diode can withstand reverse bias conditions without breakdown, ensuring reliability and longevity.

Maximum Operating Temperature: 125 °C

The high maximum operating temperature allows the diode to be used in a wide range of applications without risk of overheating.

Minimum Operating Temperature: -65 °C

The low minimum operating temperature ensures that the diode can function reliably even in extreme cold conditions.

Maximum Power Dissipation: 0.17 W

With a low power dissipation, this diode generates minimal heat during operation, improving overall efficiency.

Maximum Forward Voltage (VF): 0.24 V

The low forward voltage drop allows for efficient conduction of current in the forward direction, reducing energy loss.

Maximum Repetitive Peak Reverse Voltage: 30 V

The high repetitive peak reverse voltage rating ensures that the diode can withstand voltage spikes without failure, enhancing its robustness.

Technical Specifications

Other Function Diodes BAT54VV/A2,115 attributes and parameters. Explore more Other Function Diodes devices from NXP Semiconductors

Specs

Maximum Forward Voltage (VF):

.24 V

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-65 Cel

Maximum Power Dissipation:

.17 W

Maximum Repetitive Peak Reverse Voltage:

30 V

Maximum Reverse Current:

2 uA

Reverse Test Voltage:

25 V

Sub-Category:

Other Diodes

Surface Mount:

YES

Trade Compliance

BAT54VV/A2,115 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

Category top products 20

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