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BAT54CW,115

NXP Semiconductors

BAT54CW,115 by NXP Semiconductors

NXP Semiconductors' BAT54CW,115 is a Schottky rectifier diode with common cathode configuration and 2 elements. It has a max forward voltage of 0.8V and can handle a max output current of 0.2A. Ideal for applications requiring fast switching speeds and low power dissipation in compact electronic devices.

Median Price

$0.035

Lifecycle Status

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40

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1k+

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Adafruit Industries

USA . 50 parts In-Stock

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$0.072

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Farnell

UK . 708,000 parts In-Stock

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EBV Elektronik

Germany . 228,000 parts In-Stock

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TTI

USA . 225,000 parts In-Stock

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Arrow

USA . 192,000 parts In-Stock

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Rochester

USA . 152,887 parts In-Stock

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Future Electronics

Canada . 147,000 parts In-Stock

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Verical

USA . 15,107 parts In-Stock

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Chip1Stop

Japan . 9,395 parts In-Stock

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RS (Exports)

UK . 6,500 parts In-Stock

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Elektronika Sales Private Limited

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Freelance Electronics

USA . 600 parts In-Stock

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Digiode

USA . 1,541 parts In-Stock

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Nova Conductors

Japan . 56 parts In-Stock

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Maritex

Poland . 21,000 parts In-Stock

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Mobius Materials

USA . 6,836 parts In-Stock

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TME

Poland . 983 parts In-Stock

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IBS Electronics

USA . 1,074,000 parts In-Stock

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NAC Semi

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Atlantic Semiconductor

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Inventory MP

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Semicontronic

India . 787,116 parts In-Stock

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Ampacity Inc.

Singapore . 254,773 parts In-Stock

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Corphita

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AZTECH Wire

Italy . 5,020 parts In-Stock

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Argo Parts USA

USA . 4,637 parts In-Stock

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Netroflash

USA . 500 parts In-Stock

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Modulus Dynamics

Lithuania . 68 parts In-Stock

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Advanced Electronics

New Zealand . 100 parts In-Stock

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Aztec Data Supply Inc.

USA . 18,779 parts In-Stock

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Perfect Parts

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Continental Prestige Electronics

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Eastek

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Robosynatics

Brazil . 32,275 parts In-Stock

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Lucentia Tech

USA . 32,275 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

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Supply Digital

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Singapore . 1,380 parts In-Stock

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Overview

Discover the cutting-edge technology of the BAT54CW,115 by NXP Semiconductors. This diode & rectifier offers exceptional quality and performance, making it a top choice for a variety of applications. With a common cathode configuration and small outline package style, this component delivers reliable results in a compact design. Experience the benefits of fast reverse recovery time, low reverse current, and high power dissipation, all while enjoying the value and advantages that NXP Semiconductors brings to every product. Upgrade your electronics with the BAT54CW,115 and see the difference for yourself.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy for the package body material makes the diode lightweight and durable, therefore increasing its reliability.

Config: COMMON CATHODE, 2 ELEMENTS

The common cathode configuration with 2 elements allows for easy circuit integration and provides better stability in the application.

Surface Mount: YES

Being surface mount compatible enables easy and efficient PCB assembly, making it suitable for modern electronics manufacturing processes.

Maximum Reverse Recovery Time: 0.005 us

The ultra-fast reverse recovery time ensures minimal power loss and high efficiency in switching applications.

Maximum Reverse Current: 2 uA

The low reverse current value indicates good blocking capability, enhancing the overall performance of the diode.

Package Shape: RECTANGULAR

The rectangular package shape allows for compact and space-saving designs, ideal for densely populated PCB layouts.

No. of Terminals: 3

Having 3 terminals provides flexibility in circuit connection and allows for various configuration options to suit different application requirements.

Package Style (Meter): SMALL OUTLINE

The small outline package style saves board space and offers a low profile, making it suitable for applications with limited space constraints.

Maximum Operating Temperature: 150 °C

With a high maximum operating temperature, the diode can withstand elevated temperatures without compromising its performance, ensuring reliability in harsh environments.

Minimum Operating Temperature: -55 °C

The low minimum operating temperature allows for versatile use in a wide range of temperature conditions, making it suitable for diverse applications.

Terminal Finish: TIN

The tin terminal finish provides good solderability, ensuring secure and reliable electrical connections for proper functionality.

Terminal Position: DUAL

The dual terminal position offers flexibility in mounting and connection options, making it easier to integrate the diode into various circuit configurations.

Maximum Power Dissipation: 0.2 W

The low power dissipation value indicates efficient energy conversion and minimal heat generation, contributing to the overall reliability and longevity of the diode.

Maximum Time At Peak Reflow Temperature (s): 30

The short time at peak reflow temperature ensures the diode's reliability during the assembly process and prevents damage from overheating.

Peak Reflow Temperature °C: 260

With a high peak reflow temperature, the diode can withstand the soldering process without degradation, ensuring a reliable solder joint.

Diode Type: RECTIFIER DIODE

As a rectifier diode, it has low forward voltage drop and high current capability, making it suitable for various rectification and power supply applications.

Maximum Forward Voltage (VF): 0.8 V

The low forward voltage drop results in minimal power loss and high efficiency in conducting forward current, making it ideal for power conversion applications.

Maximum Output Current: 0.2 A

The high maximum output current rating allows for handling higher current loads, making it suitable for power supply and rectification applications.

Technology: SCHOTTKY

The Schottky technology provides fast switching speed, low forward voltage drop, and reduced reverse recovery time, enhancing the performance of the diode in high-frequency applications.

Terminal Form: GULL WING

The gull wing terminal form offers easy surface mounting and soldering, providing a secure connection and improving manufacturing efficiency.

No. of Elements: 2

Having 2 elements allows for better current handling capacity and improved performance in dual-element circuit designs.

Maximum Repetitive Peak Reverse Voltage: 30 V

The high repetitive peak reverse voltage rating ensures reliable operation in applications where reverse polarity protection is crucial.

Maximum Non Repetitive Peak Forward Current: 0.6 A

The high non-repetitive peak forward current capability allows the diode to handle short-duration surges without damage, enhancing its reliability in transient conditions.

Diode Element Material: SILICON

Silicon diode elements offer good thermal stability and reliability, making the diode suitable for various switching and rectification applications.

Technical Specifications

Diodes & Rectifiers BAT54CW,115 attributes and parameters. Explore more Diodes & Rectifiers devices from NXP Semiconductors

Specs

Config:

COMMON CATHODE, 2 ELEMENTS

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

.8 V

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Forward Current:

.6 A

No. of Elements:

2

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Maximum Output Current:

.2 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Maximum Power Dissipation:

.2 W

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

30 V

Maximum Reverse Current:

2 uA

Maximum Reverse Recovery Time:

.005 us

Sub-Category:

Rectifier Diodes

Surface Mount:

YES

Technology:

SCHOTTKY

Terminal Finish:

TIN

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

BAT54CW,115 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.70

SB

8541.10.00.70

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

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