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BAS321,115

NXP Semiconductors

BAS321,115 by NXP Semiconductors

BAS321,115 by NXP Semiconductors is a single rectifier diode with a max forward voltage of 1V and output current of 0.25A. It has a max reverse recovery time of 0.05us and can handle repetitive peak reverse voltage up to 250V. This diode is commonly used in applications requiring fast switching speeds and low power dissipation.

Median Price

$0.024

Lifecycle Status

Suppliers In-Stock

31

In-Stock Inventory

1k+

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Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 9,136 parts In-Stock

1+ parts

$0.170

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$0.066

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$0.038

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$0.028

9,136

$0.170

$0.066

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$0.028

Arrow

USA . 837,000 parts In-Stock

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Rochester

USA . 758,000 parts In-Stock

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Verical

USA . 357,000 parts In-Stock

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Farnell

UK . 342,000 parts In-Stock

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Element14

Singapore . 309,000 parts In-Stock

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EBV Elektronik

Germany . 93,000 parts In-Stock

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Elektronika Sales Private Limited

India . 90,000 parts In-Stock

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RS (Exports)

UK . 25,000 parts In-Stock

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Chip1Stop

Japan . 23,532 parts In-Stock

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Digiode

USA . 2,420 parts In-Stock

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Maritex

Poland . 66,208 parts In-Stock

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$0.227

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$0.115

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Nova Conductors

Japan . 82 parts In-Stock

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$1.000

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Martec Srl

Italy . 253,090 parts In-Stock

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ComSIT USA

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ComSIT Distribution GmbH

Germany . 189,781 parts In-Stock

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Velocity Electronics

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Chip Stock

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NAC Semi

USA . 111,000 parts In-Stock

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Sensible Micro Corp

USA . 61,300 parts In-Stock

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EPE Components Inc.

USA . 12,442 parts In-Stock

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Bristol Electronics

USA . 12,442 parts In-Stock

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VNN

France . 9,480 parts In-Stock

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Vyrian

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J2 Sourcing AB

Sweden . 6,350 parts In-Stock

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LIBRA Elektronik GmbH

Germany . 6,160 parts In-Stock

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Component Sense

UK . 3,000 parts In-Stock

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Anansix

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Dan-Mar Components

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SPM Sales

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IBS Electronics

USA . 1,000 parts In-Stock

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Semicontronic

India . 4,379,513 parts In-Stock

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Ampacity Inc.

Singapore . 876,811 parts In-Stock

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Corphita

USA . 1,467 parts In-Stock

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AZTECH Wire

Italy . 11,378 parts In-Stock

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Argo Parts USA

USA . 4,868 parts In-Stock

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Advanced Electronics

New Zealand . 700 parts In-Stock

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700

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Aztec Data Supply Inc.

USA . 2,365 parts In-Stock

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Modulus Dynamics

Lithuania . 12,400 parts In-Stock

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Microchip USA

USA . 3,520 parts In-Stock

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Netroflash

USA . 2,000 parts In-Stock

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Perfect Parts

USA . 5,975,836 parts In-Stock

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Eastek

USA . 4,533,000 parts In-Stock

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Glotronic Ltd.

UK . 655,200 parts In-Stock

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RC Electronics

USA . 380,000 parts In-Stock

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Continental Prestige Electronics

USA . 351,000 parts In-Stock

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GreenTree Electronics

Israel . 216,000 parts In-Stock

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Kepictronics

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iodParts Technologies Inc.

India . 42,520 parts In-Stock

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Allen Electronics Distributors

USA . 25,000 parts In-Stock

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Formix International (Excess)

India . 14,840 parts In-Stock

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Infinite Electronics LLP (Excess)

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A-Z Elektronik GmbH

Germany . 6,500 parts In-Stock

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UNI Independent Distributors

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Authorized Procurement Solutions

USA . 5,000 parts In-Stock

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S.R.D Solutions

India . 5,000 parts In-Stock

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Robosynatics

Brazil . 2,650 parts In-Stock

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Lucentia Tech

USA . 2,650 parts In-Stock

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Supply Digital

USA . 2,482 parts In-Stock

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Corohmni

South Africa . 1,371 parts In-Stock

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Akira Global LLC

USA . 19 parts In-Stock

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Overview

Experience unparalleled quality and reliability with the BAS321,115 by NXP Semiconductors. As a leading manufacturer in the industry of Diodes & Rectifiers, NXP Semiconductors ensures top-notch performance and durability in every product. This single-configured diode offers fast reverse recovery time, making it ideal for a wide range of applications. From consumer electronics to automotive systems, this rectifier diode delivers exceptional value by providing efficient power distribution and protection against voltage spikes. Trust NXP Semiconductors to provide you with the best-in-class components for your next project.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the diode, making it suitable for various environments.

Config: SINGLE

Simplified configuration for straightforward usage and installation.

Surface Mount: YES

Ease of installation on circuit boards, saving time and effort.

Maximum Reverse Recovery Time: 0.05 us

Fast reverse recovery time ensures efficiency and performance in electronic applications.

Package Shape: RECTANGULAR

Space-saving design for efficient use of PCB real estate.

No. of Terminals: 2

Simple 2-terminal connection for hassle-free integration.

Package Style (Meter): SMALL OUTLINE

Compact form factor suitable for compact electronic devices.

Maximum Operating Temperature: 150 °C

Wide temperature range allows for use in various operating conditions.

Terminal Finish: TIN

Corrosion-resistant finish for longer product life.

Terminal Position: DUAL

Dual terminal position for flexible installation options.

Maximum Power Dissipation: 0.3 W

Efficient power dissipation capability for reliable performance.

Maximum Time At Peak Reflow Temperature (s): 30

Can withstand peak reflow temperature for a specified amount of time, ensuring reliability during manufacturing processes.

Peak Reflow Temperature °C: 260

Can withstand high-temperature reflow processes during manufacturing.

Diode Type: RECTIFIER DIODE

Specifically designed for rectification purposes in electronic circuits, ensuring proper signal direction.

Maximum Forward Voltage (VF): 1 V

Low forward voltage drop for efficient energy conversion.

Maximum Output Current: 0.25 A

Sufficient output current capacity for various electronic applications.

Terminal Form: GULL WING

Gull wing terminal form for secure and reliable connections.

Maximum Repetitive Peak Reverse Voltage: 250 V

High reverse voltage rating for versatile usage.

Maximum Non Repetitive Peak Forward Current: 9 A

Can handle high peak forward currents for short durations, suitable for transient conditions.

Diode Element Material: SILICON

Silicon material for reliable and stable diode performance.

Technical Specifications

Diodes & Rectifiers BAS321,115 attributes and parameters. Explore more Diodes & Rectifiers devices from NXP Semiconductors

Specs

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

1 V

JESD-30 Code:

R-PDSO-G2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Forward Current:

9 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Maximum Output Current:

.25 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Maximum Power Dissipation:

.3 W

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

250 V

Maximum Reverse Recovery Time:

.05 us

Sub-Category:

Rectifier Diodes

Surface Mount:

YES

Terminal Finish:

TIN

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

BAS321,115 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.70

SB

8541.10.00.70

PCN

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

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