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2N2905AL

New England Semiconductor

2N2905AL by New England Semiconductor

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 200 MHz; Maximum Power Dissipation (Abs): .6 W; Maximum Collector Current (IC): .6 A;

Median Price

$13.790

Lifecycle Status

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2N2905AL by New England Semiconductor
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Microchip Technology

USA . 239 parts In-Stock

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Forefront Electronics and Design

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Microchip USA

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Technical Specifications

Other Function Transistors 2N2905AL attributes and parameters. Explore more Other Function Transistors devices from New England Semiconductor

Specs

Maximum Collector Current (IC):

Configuration:

Minimum DC Current Gain (hFE):

100

JESD-609 Code:

e0

No. of Elements:

1

Maximum Operating Temperature:

175 Cel

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

Tin/Lead (Sn/Pb)

Nominal Transition Frequency (fT):

Trade Compliance

2N2905AL Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

New England Semiconductor

New England Semiconductor was founded in 1985 as a manufacturer of aerospace grade high-reliability bipolar transistors. New England Semiconductor was acquired by Microsemi in 2001. Microsemi Corporation is a semiconductor manufacturer specializing in system-engineered integrated circuits and high reliability discrete devices. A long-time supplier of high-reliability discrete components to military and aerospace customers, Microsemi today is a global supplier of high performance analog, mixed-signal integrated circuits and high reliability discrete semiconductors that manage and regulate power, protect against transient voltage spikes, and transmit, receive and amplify electronic signals.

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