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NP80N03DDE-S12-AY

Nec Electronics

NP80N03DDE-S12-AY by Nec Electronics

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Terminal Form: THROUGH-HOLE; Minimum DS Breakdown Voltage: 30 V; Terminal Position: SINGLE;

Median Price

-

Lifecycle Status

Suppliers In-Stock

0

In-Stock Inventory

< 1k

Technical Specifications

Power Field Effect Transistors (FET) NP80N03DDE-S12-AY attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from Nec Electronics

Specs

Avalanche Energy Rating (EAS):

400 mJ

Case Connection:

DRAIN

Minimum DS Breakdown Voltage:

30 V

Maximum Drain Current (ID):

80 A

Maximum Drain-Source On Resistance:

.011 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JEDEC-95 Code:

TO-262AA

JESD-30 Code:

R-PSIP-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Operating Mode:

ENHANCEMENT MODE

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

IN-LINE

Polarity or Channel Type:

Maximum Pulsed Drain Current (IDM):

320 A

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

NP80N03DDE-S12-AY Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

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