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NP55N04SUG-E1-AY

Nec Electronics

NP55N04SUG-E1-AY by Nec Electronics

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Case Connection: DRAIN; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Maximum Drain-Source On Resistance: .0065 ohm;

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Dan-Mar Components

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ACDS - Activité Composants Distribution Service

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Flip Electronics

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2,500

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A-Z Elektronik GmbH

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Technical Specifications

Power Field Effect Transistors (FET) NP55N04SUG-E1-AY attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from Nec Electronics

Specs

Case Connection:

DRAIN

Minimum DS Breakdown Voltage:

40 V

Maximum Drain Current (ID):

55 A

Maximum Drain-Source On Resistance:

.0065 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JEDEC-95 Code:

TO-252AA

JESD-30 Code:

R-PSSO-G2

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

2

Operating Mode:

ENHANCEMENT MODE

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

Maximum Pulsed Drain Current (IDM):

220 A

Qualification:

Not Qualified

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

NP55N04SUG-E1-AY Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

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