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NE5500434-AZ

Nec Electronics

NE5500434-AZ by Nec Electronics

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Minimum DS Breakdown Voltage: 20 V; Maximum Drain Current (ID): 2 A; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;

Median Price

-

Lifecycle Status

Suppliers In-Stock

0

In-Stock Inventory

< 1k

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Futuretech Components

Singapore . 668 parts In-Stock

1+ parts

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100+ parts

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1k+ parts

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10k+ parts

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668

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Technical Specifications

Power Field Effect Transistors (FET) NE5500434-AZ attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from Nec Electronics

Specs

Case Connection:

SOURCE

Configuration:

Minimum DS Breakdown Voltage:

20 V

Maximum Drain Current (ID):

2 A

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-30 Code:

R-PSSO-F3

JESD-609 Code:

e6

No. of Elements:

1

No. of Terminals:

3

Operating Mode:

ENHANCEMENT MODE

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

Qualification:

Not Qualified

Surface Mount:

YES

Terminal Finish:

TIN BISMUTH

Terminal Form:

FLAT

Terminal Position:

SINGLE

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Trade Compliance

NE5500434-AZ Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

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