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UPC2710TB-E3-A

Nec Compound Semiconductor Devices

UPC2710TB-E3-A by Nec Compound Semiconductor Devices

WIDE BAND LOW POWER; Minimum Operating Temperature: -40 Cel; Maximum Operating Temperature: 85 Cel; Construction: COMPONENT; Maximum Input Power (CW): 10 dBm; Gain: 22 dB;

Median Price

$1.125

Lifecycle Status

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Bristol Electronics

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Nova Conductors

Japan . 38 parts In-Stock

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AZTECH Wire

Italy . 846 parts In-Stock

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Technical Specifications

RF & Microwave Amplifiers UPC2710TB-E3-A attributes and parameters. Explore more RF & Microwave Amplifiers devices from Nec Compound Semiconductor Devices

Specs

Construction:

COMPONENT

Gain:

22 dB

Maximum Input Power (CW):

10 dBm

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

RF or Microwave Device Type:

Manufacturer Highlights

Nec Compound Semiconductor Devices

Tokyo, March 14, 2002 - NEC Compound Semiconductor Devices, Ltd. (NEC Compound Semiconductor Devices) and Sumitomo Electric Industries, Ltd. (SEI) today announced they have joined into a multi-source agreement (MSA) to set a common architecture for 10 Gigabit per second (Gbps) detector modules used in optical networking. Sample shipments will start from today of products based on this common standard. The new device is developed to work within the 1.3 micron ~ 1.55 micron wavelength range and is mounted with a amplifier on the industry's smallest class of metal ceramic packages (L x W x H = 9.8mm x 7.5mm x 4.0mm). This super-small module addresses the calls coming from the industry for downsizing of 10 Gbps optical network transceivers. The detector module facilitates conversion of optical signals to electric signals and is one of the essential devices for 10 Gbps digital transmissions over optical fiber networks. NEC Compound Semiconductor Devices, Ltd. (NEC Compound Semiconductor Devices) is a leading provider of opticaland microwave devices, committed to meeting the specialized needs of its customers in the broadband and mobile networking fields with its compound and silicon semiconductor technologies. NEC Compound Semiconductor Devices, was divided from NEC Corporation and established in October 2001.

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