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MTFDCAE004SAJ-1N1IT

Micron Technology

MTFDCAE004SAJ-1N1IT by Micron Technology

MTFDCAE004SAJ-1N1IT by Micron Tech: USB secondary storage controller with 5V supply, -40 to 85°C temp range, and INDUSTRIAL grade. Ideal for FDD applications due to MICROELECTRONIC ASSEMBLY package style.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 1,951 parts In-Stock

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1,951

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Digiode

USA . 1,864 parts In-Stock

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1,864

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Nova Conductors

Japan . 18 parts In-Stock

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18

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

AZTECH Wire

Italy . 320 parts In-Stock

1+ parts

$11.101

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320

$11.101

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Corohmni

South Africa . 179 parts In-Stock

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$44.337

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179

$44.337

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Corphita

USA . 1,266 parts In-Stock

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Bastille Electronics

Australia . 500 parts In-Stock

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Overview

Upgrade your storage capabilities with the MTFDCAE004SAJ-1N1IT by Micron Technology. As a leading manufacturer in the industry, Micron Technology delivers top-quality secondary storage controllers that are perfect for a variety of applications. With a wide operating temperature range and industrial-grade technology, this product ensures reliability and performance. Experience the convenience of USB host interface standard and maximize your storage potential. Trust Micron Technology to provide you with cutting-edge solutions for all your storage needs.

Feature Benefit Bullets

Maximum Supply Voltage: 5.25 V

Higher supply voltage allows for more stable operation and better efficiency.

Package Shape: RECTANGULAR

Rectangular shape makes it easy to integrate into various electronic devices and circuit boards.

Package Style (Meter): MICROELECTRONIC ASSEMBLY

Microelectronic assembly ensures compact size and high performance for the controller.

Minimum Supply Voltage: 4.75 V

Lower minimum supply voltage ensures compatibility with a wide range of power sources.

Maximum Operating Temperature: 85 °C

High maximum operating temperature allows for reliable performance in industrial environments.

Minimum Operating Temperature: -40 °C

Wide range of operating temperature ensures functionality in extreme cold conditions.

Maximum Time At Peak Reflow Temperature (s): 30

Sufficient time at peak reflow temperature for proper soldering during assembly.

Peak Reflow Temperature °C: 260

High peak reflow temperature ensures proper soldering and durability of the controller.

Temperature Grade: INDUSTRIAL

Industrial grade temperature tolerance ensures reliability in harsh operating conditions.

Peripheral IC Type: SECONDARY STORAGE CONTROLLER, FLOPPY DISK DRIVE

Specifically designed for secondary storage control, ideal for floppy disk drive applications.

Host Interface Standard: USB

USB interface standard ensures easy connectivity with a wide range of host devices.

Technology: CMOS

CMOS technology offers low power consumption and high noise immunity for efficient operation.

Nominal Supply Voltage: 5 V

Stable nominal supply voltage ensures consistent performance and compatibility with standard power sources.

Technical Specifications

Secondary Storage Controllers MTFDCAE004SAJ-1N1IT attributes and parameters. Explore more Secondary Storage Controllers devices from Micron Technology

Specs

Host Interface Standard:

USB

JESD-30 Code:

R-XXMA-X

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

UNSPECIFIED

Package Shape:

Package Style (Meter):

MICROELECTRONIC ASSEMBLY

Peak Reflow Temperature (C):

260

Qualification:

Not Qualified

Maximum Supply Voltage:

5.25 V

Minimum Supply Voltage:

4.75 V

Nominal Supply Voltage:

5 V

Surface Mount:

NO

Technology:

CMOS

Temperature Grade:

Terminal Form:

Terminal Position:

UNSPECIFIED

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

MTFDCAE004SAJ-1N1IT Peripheral ICs trade compliance attributes, and parameters.

HTS

8542.31.00.01

SB

8542.31.00.00

PCN

Manufacturer Highlights

Micron Technology

Micron Technology, Inc. is a leading provider of cutting-edge semiconductor solutions and products, based in Boise, Idaho. Founded in 1978, the company manufactures dynamic random-access memory (DRAM), flash memory, USB flash drives and other storage solutions used by a wide range of businesses and consumers around the world. With more than 35,000 employees worldwide and a $20 billion market capitalization as of 2019, Micron has remained at the forefront of technological innovation for over 40 years. The company's products are used in enterprise applications such as networking and data centers; mobile computing devices including smartphones and tablets; personal computers; automotive electronics; embedded systems; gaming consoles; imaging systems; industrial manufacturing processes; medical devices; military systems and more.

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Management team

President, CEO

Sanjay Mehrotra

Executive VP, CFO

Mark J. Murphy

Executive VP, CBO

Sumit Sadana

Manufacturer fab locations 23

Fab name Location Fab Initiation Wafer Capacity

Fab 4

Fabrication

Fab Initiation

1994

USA

Boise

Wafer Capacity

8,750

1994

8,750

Fab 6

Fabrication

Fab Initiation

1997

USA

Manassas

Wafer Capacity

23,000

1997

23,000

Fab 6

Fabrication

Fab Initiation

2006

USA

Manassas

Wafer Capacity

28,000

2006

28,000

Fab 11

Fabrication

Fab Initiation

2007

Taiwan

Taoyuan

Wafer Capacity

34,000

2007

34,000

Fab 16 A1

Fabrication

Fab Initiation

2007

Taiwan

Taichung

Wafer Capacity

50,000

2007

50,000

Fab 16 A3

Fabrication

Fab Initiation

2021

Taiwan

Taichung

Wafer Capacity

3,000

2021

3,000

Fab 15

Fabrication

Fab Initiation

2002

Japan

Hiroshima

Wafer Capacity

98,000

2002

98,000

Fab 11

Fabrication

Fab Initiation

2004

Taiwan

Taoyuan

Wafer Capacity

34,000

2004

34,000

New Hiroshima DRAM Fab

Fabrication

Fab Initiation

-

Japan

Hiroshima

Wafer Capacity

-

Fab 4

Fabrication

Fab Initiation

2017

USA

Boise

Wafer Capacity

11,750

2017

11,750

Fab 10W

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

20,000

2016

20,000

Fab 10X

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

55,000

2016

55,000

Fab 15

Fabrication

Fab Initiation

2019

Japan

Hiroshima

Wafer Capacity

18,000

2019

18,000

Fab 10A

Fabrication

Fab Initiation

2019

Singapore

Singapore

Wafer Capacity

18,000

2019

18,000

Fab 10N

Fabrication

Fab Initiation

2014

Singapore

Singapore

Wafer Capacity

47,000

2014

47,000

Fab 11

Fabrication

Fab Initiation

2000

Taiwan

Taoyuan

Wafer Capacity

32,000

2000

32,000

Fab 4

Fabrication

Fab Initiation

2012

USA

Boise

Wafer Capacity

6,000

2012

6,000

Fab 16 A2

Fabrication

Fab Initiation

2015

Taiwan

Taichung

Wafer Capacity

43,000

2015

43,000

New Clay Fab Phase 1

Fabrication

Fab Initiation

2027

USA

Clay

Wafer Capacity

2027

New Boise Fab 1

Fabrication

Fab Initiation

2025

USA

Boise

Wafer Capacity

2025

Fab 15

Fabrication

Fab Initiation

2021

Japan

Hiroshima

Wafer Capacity

2021

Fab 16 A5

Fabrication

Fab Initiation

2028

Taiwan

Taichung

Wafer Capacity

2028

Expansion Fab

Fabrication

Fab Initiation

2020

USA

Manassas

Wafer Capacity

6,000

2020

6,000

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