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MTEDCBE002SAJ-1M2IT

Micron Technology

MTEDCBE002SAJ-1M2IT by Micron Technology

Micron Technology's MTEDCBE002SAJ-1M2IT is a Secondary Storage Controller with USB interface, 30 MBps data transfer rate, and CMOS technology. It operates in industrial temperature range (-40 to 85 °C) and has a rectangular package style. Ideal for flash memory drives due to its compact size (26.6mm x 36.9mm) and surface mount capability.

Median Price

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Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

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Chip Stock

USA . 21,100 parts In-Stock

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Vyrian

USA . 5,166 parts In-Stock

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Digiode

USA . 2,186 parts In-Stock

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Bristol Electronics

USA . 1,118 parts In-Stock

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Nova Conductors

Japan . 41 parts In-Stock

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Prism Electronics

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Ampacity Inc.

Singapore . 1,464 parts In-Stock

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$17.000

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AZTECH Wire

Italy . 1,011 parts In-Stock

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$19.290

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Corohmni

South Africa . 457 parts In-Stock

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$27.574

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Aranea Global

USA . 2,000 parts In-Stock

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Corphita

USA . 421 parts In-Stock

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Perfect Parts

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Overview

Experience the next level of speed and reliability with the MTEDCBE002SAJ-1M2IT by Micron Technology. As a leading manufacturer in the industry, Micron Technology delivers top-quality secondary storage controllers designed to enhance your data storage experience. With a USB host interface standard and a maximum host data transfer rate of 30 MBps, this product offers unmatched efficiency and performance. Whether you're a professional looking for seamless data management or a tech-savvy individual in need of reliable storage solutions, the MTEDCBE002SAJ-1M2IT is the perfect choice for you. Elevate your storage capabilities with Micron Technology today!

Feature Benefit Bullets

Surface Mount: YES

Surface mount technology allows for easy installation and space-saving design, making this product convenient and efficient.

Maximum Supply Voltage: 5.25 V

Provides a higher maximum supply voltage which can improve performance and reliability of the product.

Package Shape: RECTANGULAR

Rectangular shape is commonly used and easy to integrate into various electronic devices.

No. of Terminals: 10

Having 10 terminals allows for more connectivity options and versatility in usage.

Package Style (Meter): MICROELECTRONIC ASSEMBLY

Microelectronic assembly provides compact packaging and precise assembly, enhancing the overall quality of the product.

Minimum Supply Voltage: 4.75 V

A lower minimum supply voltage can help in reducing power consumption and potentially increasing battery life.

Maximum Operating Temperature: 85 °C

With a high maximum operating temperature, this product can withstand harsh environmental conditions and ensure reliable operation.

Minimum Operating Temperature: -40 °C

The product can function effectively in extreme cold temperatures, making it suitable for a wide range of applications.

Maximum Seated Height: 5.9 mm

Low seated height allows for slim and compact designs, ideal for space-constrained applications.

Width: 26.6 mm

Moderate width provides a balance between space efficiency and ease of handling during installation.

Length: 36.9 mm

Optimal length for fitting into various devices without compromising on functionality.

Temperature Grade: INDUSTRIAL

Industrial grade temperature tolerance ensures stability and performance in demanding industrial environments.

Peripheral IC Type: SECONDARY STORAGE CONTROLLER, FLASH MEMORY DRIVE

Incorporating secondary storage controller and flash memory drive functionality offers versatile storage solutions for users.

Host Interface Standard: USB

USB interface is widely used, making it compatible with a range of devices and systems for seamless connectivity.

Technology: CMOS

CMOS technology provides low power consumption, high speed, and reliability, enhancing the overall performance of the product.

Terminal Form: NO LEAD

No lead terminals make the product environmentally friendly and compliant with RoHS regulations.

Maximum Host Data Transfer Rate: 30 MBps

High data transfer rate enables fast and efficient data handling, improving overall system performance.

Nominal Supply Voltage: 5 V

Stable nominal supply voltage ensures consistent operation and compatibility with standard power sources.

Technical Specifications

Secondary Storage Controllers MTEDCBE002SAJ-1M2IT attributes and parameters. Explore more Secondary Storage Controllers devices from Micron Technology

Specs

Maximum Host Data Transfer Rate:

30 MBps

Host Interface Standard:

USB

JESD-30 Code:

R-XXMA-N10

Length:

36.9 mm

No. of Terminals:

10

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

UNSPECIFIED

Package Shape:

Package Style (Meter):

MICROELECTRONIC ASSEMBLY

Maximum Seated Height:

5.9 mm

Maximum Supply Voltage:

5.25 V

Minimum Supply Voltage:

4.75 V

Nominal Supply Voltage:

5 V

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

Terminal Position:

UNSPECIFIED

Width:

26.6 mm

Trade Compliance

MTEDCBE002SAJ-1M2IT Peripheral ICs trade compliance attributes, and parameters.

HTS

8542.31.00.01

SB

8542.31.00.00

PCN

Manufacturer Highlights

Micron Technology

Micron Technology, Inc. is a leading provider of cutting-edge semiconductor solutions and products, based in Boise, Idaho. Founded in 1978, the company manufactures dynamic random-access memory (DRAM), flash memory, USB flash drives and other storage solutions used by a wide range of businesses and consumers around the world. With more than 35,000 employees worldwide and a $20 billion market capitalization as of 2019, Micron has remained at the forefront of technological innovation for over 40 years. The company's products are used in enterprise applications such as networking and data centers; mobile computing devices including smartphones and tablets; personal computers; automotive electronics; embedded systems; gaming consoles; imaging systems; industrial manufacturing processes; medical devices; military systems and more.

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Management team

President, CEO

Sanjay Mehrotra

Executive VP, CFO

Mark J. Murphy

Executive VP, CBO

Sumit Sadana

Manufacturer fab locations 23

Fab name Location Fab Initiation Wafer Capacity

Fab 4

Fabrication

Fab Initiation

1994

USA

Boise

Wafer Capacity

8,750

1994

8,750

Fab 6

Fabrication

Fab Initiation

1997

USA

Manassas

Wafer Capacity

23,000

1997

23,000

Fab 6

Fabrication

Fab Initiation

2006

USA

Manassas

Wafer Capacity

28,000

2006

28,000

Fab 11

Fabrication

Fab Initiation

2007

Taiwan

Taoyuan

Wafer Capacity

34,000

2007

34,000

Fab 16 A1

Fabrication

Fab Initiation

2007

Taiwan

Taichung

Wafer Capacity

50,000

2007

50,000

Fab 16 A3

Fabrication

Fab Initiation

2021

Taiwan

Taichung

Wafer Capacity

3,000

2021

3,000

Fab 15

Fabrication

Fab Initiation

2002

Japan

Hiroshima

Wafer Capacity

98,000

2002

98,000

Fab 11

Fabrication

Fab Initiation

2004

Taiwan

Taoyuan

Wafer Capacity

34,000

2004

34,000

New Hiroshima DRAM Fab

Fabrication

Fab Initiation

-

Japan

Hiroshima

Wafer Capacity

-

Fab 4

Fabrication

Fab Initiation

2017

USA

Boise

Wafer Capacity

11,750

2017

11,750

Fab 10W

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

20,000

2016

20,000

Fab 10X

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

55,000

2016

55,000

Fab 15

Fabrication

Fab Initiation

2019

Japan

Hiroshima

Wafer Capacity

18,000

2019

18,000

Fab 10A

Fabrication

Fab Initiation

2019

Singapore

Singapore

Wafer Capacity

18,000

2019

18,000

Fab 10N

Fabrication

Fab Initiation

2014

Singapore

Singapore

Wafer Capacity

47,000

2014

47,000

Fab 11

Fabrication

Fab Initiation

2000

Taiwan

Taoyuan

Wafer Capacity

32,000

2000

32,000

Fab 4

Fabrication

Fab Initiation

2012

USA

Boise

Wafer Capacity

6,000

2012

6,000

Fab 16 A2

Fabrication

Fab Initiation

2015

Taiwan

Taichung

Wafer Capacity

43,000

2015

43,000

New Clay Fab Phase 1

Fabrication

Fab Initiation

2027

USA

Clay

Wafer Capacity

2027

New Boise Fab 1

Fabrication

Fab Initiation

2025

USA

Boise

Wafer Capacity

2025

Fab 15

Fabrication

Fab Initiation

2021

Japan

Hiroshima

Wafer Capacity

2021

Fab 16 A5

Fabrication

Fab Initiation

2028

Taiwan

Taichung

Wafer Capacity

2028

Expansion Fab

Fabrication

Fab Initiation

2020

USA

Manassas

Wafer Capacity

6,000

2020

6,000

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