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UM6601B

Microchip Technology

UM6601B by Microchip Technology

UM6601B by Microchip Technology is a PIN diode with single configuration for ultra high frequency applications. It features a max diode capacitance of 0.4 pF, reverse test voltage of 100 V, and max power dissipation of 2.5 W. Ideal for attenuator and switching purposes, it operates b/w -65°C to 175°C temperature range.

Median Price

$11.735

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Microchip Technology

USA . 24 parts In-Stock

1+ parts

$11.640

100+ parts

$10.500

1k+ parts

$9.470

10k+ parts

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24

$11.640

$10.500

$9.470

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Mouser Electronics

USA . 65 parts In-Stock

1+ parts

$11.830

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65

$11.830

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Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 71 parts In-Stock

1+ parts

$11.840

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71

$11.840

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Vyrian

USA . 5,484 parts In-Stock

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5,484

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Continental Prestige Electronics

USA . 1,794 parts In-Stock

1+ parts

$9.470

100+ parts

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$9.281

1,794

$9.470

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$9.281

Ampacity Inc.

Singapore . 285 parts In-Stock

1+ parts

$9.890

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285

$9.890

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Netroflash

USA . 1,000 parts In-Stock

1+ parts

$11.840

100+ parts

-

1k+ parts

$11.248

10k+ parts

$11.011

1,000

$11.840

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$11.248

$11.011

AZTECH Wire

Italy . 596 parts In-Stock

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$19.331

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596

$19.331

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Microchip USA

USA . 4,093 parts In-Stock

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4,093

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West Coast Incorporated

USA . 1,470 parts In-Stock

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1,470

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Argo Parts USA

USA . 847 parts In-Stock

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847

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Overview

Unlock the power of ultra-high-frequency applications with the UM6601B PIN Diode from Microchip Technology. This single-configured diode offers unmatched quality and reliability, perfect for attenuators and switching needs. With a maximum operating temperature of 175°C and a reverse test voltage of 100V, this diode ensures optimal performance in any environment. Experience the benefits of superior technology and exceptional value with the UM6601B by Microchip Technology.

Feature Benefit Bullets

Config: SINGLE -

Being a single configuration allows for easy integration into various circuits.

Frequency Band: ULTRA HIGH FREQUENCY -

Ideal for high frequency applications, ensuring superior performance.

Maximum Diode Capacitance: 0.4 pF -

Low capacitance results in minimal signal loss and improved efficiency.

Package Shape: ROUND -

Round shape enables compact design and efficient utilization of space.

Reverse Test Voltage: 100 V -

High reverse test voltage provides reliable protection against voltage spikes.

No. of Terminals: 2 -

Two terminals simplify the connection process for ease of use.

Package Style: LONG FORM -

Long form package style offers flexibility in mounting options.

Application: ATTENUATOR; SWITCHING -

Suitable for attenuation and switching applications, providing versatility.

Maximum Operating Temperature: 175 °C -

High maximum operating temperature ensures reliability in tough conditions.

Minimum Operating Temperature: -65 °C -

Low minimum operating temperature allows for operation in various environments.

Terminal Finish: TIN LEAD -

Tin lead terminal finish offers good solderability and corrosion resistance.

Terminal Position: AXIAL -

Axial terminal position allows for easy alignment and installation.

Maximum Diode Forward Resistance: 2.5 ohm -

Low forward resistance leads to minimal voltage drop and enhanced performance.

Case Connection: ISOLATED -

Isolated case connection prevents unwanted interference and improves signal integrity.

Maximum Power Dissipation: 2.5 W -

High power dissipation capability ensures efficient heat management.

Nominal Diode Capacitance: 0.4 pF -

Nominal capacitance value ensures consistent performance over a wide frequency range.

Nominal Minority Carrier Lifetime: 1 us -

Short minority carrier lifetime results in fast switching speed.

Minimum Breakdown Voltage: 100 V -

Adequate breakdown voltage protects the diode from voltage surges.

Diode Resistive Test Frequency: 100 MHz -

High test frequency ensures accurate characterization of the diode.

Diode Resistive Test Current: 100 mA -

Adequate test current allows for reliable testing of the diode.

Diode Type: PIN DIODE -

Pin diode design offers low noise, high linearity, and fast response times.

Technology: POSITIVE-INTRINSIC-NEGATIVE -

PIN technology provides excellent RF performance and low distortion.

Terminal Form: WIRE -

Wire terminal form allows for easy connectivity and secure attachment.

Diode Element Material: SILICON -

Silicon diode material offers excellent thermal stability and reliability.

Technical Specifications

PIN Diodes UM6601B attributes and parameters. Explore more PIN Diodes devices from Microchip Technology

Specs

Application:

ATTENUATOR; SWITCHING

Minimum Breakdown Voltage:

100 V

Case Connection:

ISOLATED

Config:

SINGLE

Maximum Diode Capacitance:

.4 pF

Nominal Diode Capacitance:

.4 pF

Diode Element Material:

SILICON

Maximum Diode Forward Resistance:

2.5 ohm

Diode Resistive Test Current:

100 mA

Diode Resistive Test Frequency:

100 MHz

Diode Type:

Frequency Band:

ULTRA HIGH FREQUENCY

JESD-30 Code:

O-XALF-W2

JESD-609 Code:

e0

Nominal Minority Carrier Lifetime:

1 us

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

175 Cel

Minimum Operating Temperature:

-65 Cel

Package Body Material:

UNSPECIFIED

Package Shape:

Package Style (Meter):

LONG FORM

Maximum Power Dissipation:

2.5 W

Qualification:

Not Qualified

Reverse Test Voltage:

100 V

Sub-Category:

PIN Diodes

Surface Mount:

NO

Technology:

POSITIVE-INTRINSIC-NEGATIVE

Terminal Finish:

TIN LEAD

Terminal Form:

Terminal Position:

Trade Compliance

UM6601B Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.60

SB

8541.10.00.60

NSN

5961-00-365-8382, 5961003658382, 5961-01-004-4009, 5961010044009, 5961-01-090-4934, 5961010904934

NIIN

003658382, 010044009, 010904934

PCN

Manufacturer Highlights

Microchip Technology

Microchip Technology Incorporated is a leading provider of integrated circuit (IC) solutions for the global market. Founded in 1989, the company designs, manufactures, tests and markets state-of-the-art microcontrollers and analog devices for use in a wide array of electronics applications, such as the automotive industry, consumer electronics and industrial automation. Through its world-class production processes and technologies, Microchip Technology has become an innovator of semiconductor solutions that enable customers to maximize their performance while streamlining costs.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President and CEO

Ganesh Moorthy

Executive Chair

Steve Sanghi

CFO, Senior VP

J. Eric Bjornholt

Manufacturer fab locations 9

Fab name Location Fab Initiation Wafer Capacity

Fab 5 - Colorado

Fabrication

Fab Initiation

1995

USA

Colorado Springs

Wafer Capacity

70,000

1995

70,000

Santa Clara

Fabrication

Fab Initiation

1990

USA

Santa Clara

Wafer Capacity

1,290

1990

1,290

Lawrence

Fabrication

Fab Initiation

1989

USA

Lawrence

Wafer Capacity

5,000

1989

5,000

Fab 4 - Gresham

Fabrication

Fab Initiation

1988

USA

Gresham

Wafer Capacity

50,000

1988

50,000

Fab 2 - Tempe

Fabrication

Fab Initiation

1994

USA

Tempe

Wafer Capacity

30,000

1994

30,000

Beverly

Fabrication

Fab Initiation

1985

USA

Beverly

Wafer Capacity

2,000

1985

2,000

Lowell

Fabrication

Fab Initiation

1986

USA

Lowell

Wafer Capacity

15,000

1986

15,000

Garden Grove

Fabrication

Fab Initiation

1985

USA

Garden Grove

Wafer Capacity

12,000

1985

12,000

New Fab - Gresham

Fabrication

Fab Initiation

2024

USA

Gresham

Wafer Capacity

2024

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