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SMLJ58AE3/TR13

Microchip Technology

SMLJ58AE3/TR13 by Microchip Technology

SMLJ58AE3/TR13 by Microchip Tech is a unidirectional TRANS VOLTAGE SUPPRESSOR DIODE with 58V max repetitive peak reverse voltage. It has a 3000W max non-repetitive peak reverse power dissipation and operates in avalanche technology. Ideal for transient suppression applications requiring high breakdown voltages in compact designs.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 828 parts In-Stock

1+ parts

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828

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Nova Conductors

Japan . 300 parts In-Stock

1+ parts

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300

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Ampacity Inc.

Singapore . 1,593 parts In-Stock

1+ parts

$1.010

100+ parts

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1,593

$1.010

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AZTECH Wire

Italy . 288 parts In-Stock

1+ parts

$7.338

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288

$7.338

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West Coast Incorporated

USA . 5,212 parts In-Stock

1+ parts

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5,212

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Argo Parts USA

USA . 1,609 parts In-Stock

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1,609

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Continental Prestige Electronics

USA . 946 parts In-Stock

1+ parts

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946

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Bastille Electronics

Australia . 300 parts In-Stock

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300

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Overview

Protect your electronic devices with the reliable SMLJ58AE3/TR13 Transient Suppression Device by Microchip Technology. Designed with quality in mind, this product offers superior protection against voltage spikes and surges, ensuring the longevity of your equipment. Ideal for a range of applications, this device is a must-have for anyone looking to safeguard their valuable electronics. Trust in Microchip Technology to provide you with top-notch products that deliver peace of mind and security. Choose the SMLJ58AE3/TR13 for unrivaled performance and protection.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material used for the package body provides durability and protection for the internal components, ensuring a longer lifespan for the product.

Maximum Non Repetitive Peak Reverse Power Dissipation: 3000 W

The high power dissipation capability allows the device to handle sudden spikes and surges in voltage, providing reliable protection for connected equipment.

Maximum Breakdown Voltage: 71.2 V

The high maximum breakdown voltage ensures that the device can effectively suppress transient voltage spikes within the specified range, protecting sensitive electronics from damage.

Diode Type: TRANS VOLTAGE SUPPRESSOR DIODE

The use of trans voltage suppressor diodes in the design allows for efficient and effective suppression of transient voltage spikes, safeguarding connected devices from potential harm.

Technical Specifications

Transient Suppression Devices SMLJ58AE3/TR13 attributes and parameters. Explore more Transient Suppression Devices devices from Microchip Technology

Specs

Maximum Breakdown Voltage:

71.2 V

Minimum Breakdown Voltage:

64.4 V

Config:

SINGLE

Diode Element Material:

SILICON

JEDEC-95 Code:

DO-214AB

JESD-30 Code:

R-PDSO-C2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Reverse Power Dissipation:

3000 W

No. of Elements:

1

No. of Terminals:

2

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Polarity:

UNIDIRECTIONAL

Maximum Power Dissipation:

1.61 W

Maximum Repetitive Peak Reverse Voltage:

58 V

Surface Mount:

YES

Technology:

AVALANCHE

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Trade Compliance

SMLJ58AE3/TR13 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

Manufacturer Highlights

Microchip Technology

Microchip Technology Incorporated is a leading provider of integrated circuit (IC) solutions for the global market. Founded in 1989, the company designs, manufactures, tests and markets state-of-the-art microcontrollers and analog devices for use in a wide array of electronics applications, such as the automotive industry, consumer electronics and industrial automation. Through its world-class production processes and technologies, Microchip Technology has become an innovator of semiconductor solutions that enable customers to maximize their performance while streamlining costs.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President and CEO

Ganesh Moorthy

Executive Chair

Steve Sanghi

CFO, Senior VP

J. Eric Bjornholt

Manufacturer fab locations 9

Fab name Location Fab Initiation Wafer Capacity

Fab 5 - Colorado

Fabrication

Fab Initiation

1995

USA

Colorado Springs

Wafer Capacity

70,000

1995

70,000

Santa Clara

Fabrication

Fab Initiation

1990

USA

Santa Clara

Wafer Capacity

1,290

1990

1,290

Lawrence

Fabrication

Fab Initiation

1989

USA

Lawrence

Wafer Capacity

5,000

1989

5,000

Fab 4 - Gresham

Fabrication

Fab Initiation

1988

USA

Gresham

Wafer Capacity

50,000

1988

50,000

Fab 2 - Tempe

Fabrication

Fab Initiation

1994

USA

Tempe

Wafer Capacity

30,000

1994

30,000

Beverly

Fabrication

Fab Initiation

1985

USA

Beverly

Wafer Capacity

2,000

1985

2,000

Lowell

Fabrication

Fab Initiation

1986

USA

Lowell

Wafer Capacity

15,000

1986

15,000

Garden Grove

Fabrication

Fab Initiation

1985

USA

Garden Grove

Wafer Capacity

12,000

1985

12,000

New Fab - Gresham

Fabrication

Fab Initiation

2024

USA

Gresham

Wafer Capacity

2024

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