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1N5297-1E3

Microchip Technology

1N5297-1E3 by Microchip Technology

1N5297-1E3 by Microchip Tech is a single current regulator diode with 1mA nominal regulation current. It operates b/w -65 to 175°C, has a max power dissipation of 0.5W, and a max repetitive peak reverse voltage of 100V. Ideal for applications requiring precise current control in various temperature conditions.

Median Price

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Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

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VNN

France . 4,577 parts In-Stock

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Vyrian

USA . 259 parts In-Stock

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259

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Nova Conductors

Japan . 100 parts In-Stock

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100

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Aztec Data Supply Inc.

USA . 125 parts In-Stock

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$0.028

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125

$0.028

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Corohmni

South Africa . 548 parts In-Stock

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$0.065

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548

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Ampacity Inc.

Singapore . 1,322 parts In-Stock

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$2.010

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$2.010

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AZTECH Wire

Italy . 413 parts In-Stock

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$5.033

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$5.033

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QUARKTWIN TECHNOLOGY LTD

USA . 17,942 parts In-Stock

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Microchip USA

USA . 10,839 parts In-Stock

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Continental Prestige Electronics

USA . 5,968 parts In-Stock

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Marpe Global Electronics

Taiwan . 5,487 parts In-Stock

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QualityLine Systems

Poland . 5,487 parts In-Stock

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5,487

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XL Components Corporation

Australia . 5,487 parts In-Stock

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Argo Parts USA

USA . 5,313 parts In-Stock

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Aranea Global

USA . 2,000 parts In-Stock

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Overview

Unlock precision and reliability with the 1N5297-1E3 by Microchip Technology. Crafted with top-notch materials and cutting-edge technology, this current regulator diode ensures optimal performance in a variety of applications. From voltage regulation to signal conditioning, this versatile component offers unmatched value and benefits for all your electronic needs. Trust Microchip Technology to deliver quality products that exceed expectations every time.

Feature Benefit Bullets

Package Body Material: GLASS

Glass material provides excellent protection for the diode and ensures long-term durability.

Nominal Regulation Current (Ireg): 1 mA

Provides precise regulation of current at 1 mA, which is ideal for specific applications that require this level of current.

Maximum Operating Temperature: 175 °C

Can operate efficiently at high temperatures, making it suitable for applications where temperature may vary.

Minimum Operating Temperature: -65 °C

Able to function at extremely low temperatures, allowing for versatile use in various environmental conditions.

Minimum Dynamic Impedance: 800000 ohm

High dynamic impedance ensures stable current regulation and prevents variations in output.

Maximum Power Dissipation: 0.5 W

Can handle power dissipation of up to 0.5W, making it suitable for applications where moderate power levels are required.

Maximum Repetitive Peak Reverse Voltage: 100 V

Provides reliable reverse voltage protection up to 100V, enhancing the longevity of the diode.

Diode Element Material: SILICON

Utilizing silicon as the diode element material ensures consistent performance and reliability.

Technical Specifications

Current Regulator Diodes 1N5297-1E3 attributes and parameters. Explore more Current Regulator Diodes devices from Microchip Technology

Specs

Additional Features:

METALLURGICALLY BONDED, HIGH SOURCE IMPEDANCE

Case Connection:

ISOLATED

Config:

SINGLE

Diode Element Material:

SILICON

Minimum Dynamic Impedance:

800000 ohm

JEDEC-95 Code:

DO-7

JESD-30 Code:

O-LALF-W2

JESD-609 Code:

e3

Maximum Limiting Voltage:

1.35 V

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

175 Cel

Minimum Operating Temperature:

-65 Cel

Package Body Material:

GLASS

Package Shape:

Package Style (Meter):

LONG FORM

Maximum Power Dissipation:

.5 W

Nominal Regulation Current (Ireg):

1 mA

Maximum Repetitive Peak Reverse Voltage:

100 V

Sub-Category:

Current Regulator Diodes

Surface Mount:

NO

Technology:

FIELD EFFECT

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Trade Compliance

1N5297-1E3 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.70

SB

8541.10.00.70

Manufacturer Highlights

Microchip Technology

Microchip Technology Incorporated is a leading provider of integrated circuit (IC) solutions for the global market. Founded in 1989, the company designs, manufactures, tests and markets state-of-the-art microcontrollers and analog devices for use in a wide array of electronics applications, such as the automotive industry, consumer electronics and industrial automation. Through its world-class production processes and technologies, Microchip Technology has become an innovator of semiconductor solutions that enable customers to maximize their performance while streamlining costs.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President and CEO

Ganesh Moorthy

Executive Chair

Steve Sanghi

CFO, Senior VP

J. Eric Bjornholt

Manufacturer fab locations 9

Fab name Location Fab Initiation Wafer Capacity

Fab 5 - Colorado

Fabrication

Fab Initiation

1995

USA

Colorado Springs

Wafer Capacity

70,000

1995

70,000

Santa Clara

Fabrication

Fab Initiation

1990

USA

Santa Clara

Wafer Capacity

1,290

1990

1,290

Lawrence

Fabrication

Fab Initiation

1989

USA

Lawrence

Wafer Capacity

5,000

1989

5,000

Fab 4 - Gresham

Fabrication

Fab Initiation

1988

USA

Gresham

Wafer Capacity

50,000

1988

50,000

Fab 2 - Tempe

Fabrication

Fab Initiation

1994

USA

Tempe

Wafer Capacity

30,000

1994

30,000

Beverly

Fabrication

Fab Initiation

1985

USA

Beverly

Wafer Capacity

2,000

1985

2,000

Lowell

Fabrication

Fab Initiation

1986

USA

Lowell

Wafer Capacity

15,000

1986

15,000

Garden Grove

Fabrication

Fab Initiation

1985

USA

Garden Grove

Wafer Capacity

12,000

1985

12,000

New Fab - Gresham

Fabrication

Fab Initiation

2024

USA

Gresham

Wafer Capacity

2024

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