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GBP808N

Lite-on Semiconductor

GBP808N by Lite-on Semiconductor

BRIDGE RECTIFIER DIODE; Terminal Position: SINGLE; Terminal Form: THROUGH-HOLE; No. of Terminals: 4; Surface Mount: NO; Package Shape: RECTANGULAR;

Median Price

-

Lifecycle Status

Suppliers In-Stock

0

In-Stock Inventory

< 1k

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Microchip USA

USA . 344 parts In-Stock

1+ parts

$3.542

100+ parts

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1k+ parts

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344

$3.542

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Northwest PG Solutions

USA . 1,426 parts In-Stock

1+ parts

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100+ parts

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1k+ parts

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10k+ parts

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1,426

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Native Components

USA . 787 parts In-Stock

1+ parts

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100+ parts

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1k+ parts

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10k+ parts

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787

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Technical Specifications

Bridge Rectifier Diodes GBP808N attributes and parameters. Explore more Bridge Rectifier Diodes devices from Lite-on Semiconductor

Specs

Minimum Breakdown Voltage:

800 V

Config:

BRIDGE, 4 ELEMENTS

Diode Element Material:

SILICON

JESD-30 Code:

R-PSFM-T4

Maximum Non Repetitive Peak Forward Current:

330 A

No. of Elements:

4

No. of Phases:

1

No. of Terminals:

4

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Maximum Output Current:

1.5 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

FLANGE MOUNT

Reference Standard:

UL RECOGNIZED

Maximum Repetitive Peak Reverse Voltage:

800 V

Surface Mount:

NO

Terminal Form:

Terminal Position:

Trade Compliance

GBP808N Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

Manufacturer Highlights

Lite-on Semiconductor

Lite-On Semiconductor Corp is a green power semiconductor components supplier based in Taiwan. The company design, develop, package and test a wide series of green power related semiconductor components that are mainly applied to communications, information, consumer electronics products. Its product offering includes power management integrated circuit, discrete power devices, and wafer foundry.

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