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IXTN600N04T2

IXYS Corporation

IXTN600N04T2 by IXYS Corporation

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 940 W; Qualification: Not Qualified; Transistor Element Material: SILICON;

Median Price

$35.720

Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Newark

USA . 300 parts In-Stock

1+ parts

$31.940

100+ parts

$23.180

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300

$31.940

$23.180

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Mouser Electronics

USA . 2,012 parts In-Stock

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$39.500

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$27.980

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2,012

$39.500

$27.980

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Distributors (In-Stock)

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Ozdisan Elektronik

Türkiye . 12 parts In-Stock

1+ parts

$42.941

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12

$42.941

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ComSIT Distribution GmbH

Germany . 967 parts In-Stock

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Nova Conductors

Japan . 300 parts In-Stock

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300

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NAC Semi

USA . 10 parts In-Stock

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10

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Distributors (Availability)

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Advanced Electronics

New Zealand . 500 parts In-Stock

1+ parts

$0.871

100+ parts

$0.793

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$0.714

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500

$0.871

$0.793

$0.714

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Andel Nordic

Denmark . 500 parts In-Stock

1+ parts

$3.362

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$3.228

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$3.228

500

$3.362

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$3.228

$3.228

Ampacity Inc.

Singapore . 63 parts In-Stock

1+ parts

$28.460

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63

$28.460

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Component Stockers USA

USA . 110 parts In-Stock

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$35.060

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$27.250

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110

$35.060

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Microchip USA

USA . 9,958 parts In-Stock

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$86.963

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Aranea Global

USA . 2,000 parts In-Stock

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Glotronic Ltd.

UK . 1,965 parts In-Stock

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Perfect Parts

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GreenTree Electronics

Israel . 50 parts In-Stock

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Authorized Procurement Solutions

USA . 12 parts In-Stock

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Technical Specifications

Power Field Effect Transistors (FET) IXTN600N04T2 attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from IXYS Corporation

Specs

Additional Features:

AVALANCHE RATED

Avalanche Energy Rating (EAS):

3000 mJ

Case Connection:

ISOLATED

Minimum DS Breakdown Voltage:

40 V

Maximum Drain Current (Abs) (ID):

600 A

Maximum Drain Current (ID):

600 A

Maximum Drain-Source On Resistance:

.00105 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-30 Code:

R-PUFM-X4

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

4

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

175 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Maximum Pulsed Drain Current (IDM):

1800 A

Qualification:

Not Qualified

Reference Standard:

UL RECOGNIZED

Sub-Category:

FET General Purpose Power

Surface Mount:

NO

Terminal Finish:

NICKEL

Terminal Form:

UNSPECIFIED

Terminal Position:

UPPER

Maximum Time At Peak Reflow Temperature (s):

10

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

IXTN600N04T2 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

IXYS Corporation

IXYS is now part of Littlefuse. Together, IXYS and Littelfuse will leverage their combined technology portfolios and expertise to enhance customer value.Headquartered in Milpitas, CA, and Leiden, Netherlands, IXYS has gained a worldwide reputation as a premier power semiconductor manufacturer. Its diversified product base of specialized power semiconductors, integrated circuits and RF power is utilized by more than 2500 customers worldwide, ranging across industrial, transportation, telecommunications, computer, medical, consumer and clean tech markets. Learn more about IXYS’ 30-year history, its founder Dr. Nathan Zommer, its divisions and current growth.

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