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IXTN200N10T

IXYS Corporation

IXTN200N10T by IXYS Corporation

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 550 W; No. of Terminals: 4; Package Shape: RECTANGULAR;

Median Price

$26.010

Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

< 1k

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 213 parts In-Stock

1+ parts

$25.750

100+ parts

$24.750

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213

$25.750

$24.750

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DigiKey

USA . 250 parts In-Stock

1+ parts

$26.270

100+ parts

$24.753

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250

$26.270

$24.753

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-

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Ozdisan Elektronik

Türkiye . 33 parts In-Stock

1+ parts

$45.579

100+ parts

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33

$45.579

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ACDS - Activité Composants Distribution Service

France . 137 parts In-Stock

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137

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NAC Semi

USA . 26 parts In-Stock

1+ parts

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100+ parts

$73.450

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26

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$73.450

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Andel Nordic

Denmark . 281 parts In-Stock

1+ parts

$8.805

100+ parts

-

1k+ parts

$8.453

10k+ parts

$8.453

281

$8.805

-

$8.453

$8.453

Component Stockers USA

USA . 439 parts In-Stock

1+ parts

$38.180

100+ parts

$29.660

1k+ parts

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439

$38.180

$29.660

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Microchip USA

USA . 107 parts In-Stock

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$92.299

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107

$92.299

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GreenTree Electronics

Israel . 50 parts In-Stock

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50

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Perfect Parts

USA . 31 parts In-Stock

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31

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Technical Specifications

Power Field Effect Transistors (FET) IXTN200N10T attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from IXYS Corporation

Specs

Additional Features:

AVALANCHE RATED

Avalanche Energy Rating (EAS):

1500 mJ

Case Connection:

ISOLATED

Minimum DS Breakdown Voltage:

100 V

Maximum Drain Current (Abs) (ID):

200 A

Maximum Drain Current (ID):

200 A

Maximum Drain-Source On Resistance:

.0055 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-30 Code:

R-PUFM-X4

No. of Elements:

1

No. of Terminals:

4

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Maximum Pulsed Drain Current (IDM):

500 A

Qualification:

Not Qualified

Sub-Category:

FET General Purpose Power

Surface Mount:

NO

Terminal Finish:

NICKEL

Terminal Form:

UNSPECIFIED

Terminal Position:

UPPER

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

IXTN200N10T Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

IXYS Corporation

IXYS is now part of Littlefuse. Together, IXYS and Littelfuse will leverage their combined technology portfolios and expertise to enhance customer value.Headquartered in Milpitas, CA, and Leiden, Netherlands, IXYS has gained a worldwide reputation as a premier power semiconductor manufacturer. Its diversified product base of specialized power semiconductors, integrated circuits and RF power is utilized by more than 2500 customers worldwide, ranging across industrial, transportation, telecommunications, computer, medical, consumer and clean tech markets. Learn more about IXYS’ 30-year history, its founder Dr. Nathan Zommer, its divisions and current growth.

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