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ND260N12KHPSA1

Infineon Technologies

ND260N12KHPSA1 by Infineon Technologies

ND260N12KHPSA1 by Infineon Technologies is a single rectifier diode with a max output current of 260A and a max repetitive peak reverse voltage of 1200V. It operates in temperatures ranging from -40 to 150°C, making it suitable for high-power applications requiring efficient rectification. The diode's silicon element material ensures reliable performance in various electronic systems.

Median Price

$108.618

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

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Nova Conductors

Japan . 600 parts In-Stock

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Vyrian

USA . 7,156 parts In-Stock

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Digiode

USA . 60 parts In-Stock

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Ampacity Inc.

Singapore . 601 parts In-Stock

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$3.010

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AZTECH Wire

Italy . 758 parts In-Stock

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Continental Prestige Electronics

USA . 1,987 parts In-Stock

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Netroflash

USA . 1,000 parts In-Stock

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Modulus Dynamics

Lithuania . 17,355 parts In-Stock

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$126.799

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$121.727

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$116.655

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Microchip USA

USA . 6,034 parts In-Stock

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$173.895

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Argo Parts USA

USA . 5,234 parts In-Stock

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Corphita

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Perfect Parts

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Overview

Experience the exceptional quality and reliability of Infineon Technologies with the ND260N12KHPSA1 diode rectifier. This product offers superior performance and efficiency, making it ideal for a wide range of applications. Whether you need to power electronics or control circuits, this rectifier diode provides maximum output current of 260 A and a maximum repetitive peak reverse voltage of 1200 V. Trust in the industry-leading standards of Infineon Technologies and elevate your projects with the ND260N12KHPSA1.

Feature Benefit Bullets

Maximum Reverse Current: 30000 uA

Low reverse current ensures efficient operation and prevents overheating of the diode.

Package Shape: RECTANGULAR

Rectangular shape allows for easy mounting and integration into circuit boards or systems.

Maximum Operating Temperature: 150 °C

High maximum operating temperature allows for reliable performance even in demanding environments.

Maximum Forward Voltage (VF): 1.32 V

Low forward voltage ensures minimal power loss and efficient energy conversion.

Maximum Output Current: 260 A

High output current capability makes this diode suitable for high-power applications.

Maximum Repetitive Peak Reverse Voltage: 1200 V

High reverse voltage rating provides protection against voltage spikes and surges.

Diode Element Material: SILICON

Silicon diodes are known for their reliability and performance, making this product a dependable choice.

Technical Specifications

Diodes & Rectifiers ND260N12KHPSA1 attributes and parameters. Explore more Diodes & Rectifiers devices from Infineon Technologies

Specs

Application:

GENERAL PURPOSE

Case Connection:

ISOLATED

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

1.32 V

JESD-30 Code:

R-XUFM-X2

Maximum Non Repetitive Peak Forward Current:

8300 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-40 Cel

Maximum Output Current:

260 A

Package Body Material:

UNSPECIFIED

Package Shape:

Package Style (Meter):

FLANGE MOUNT

Peak Reflow Temperature (C):

NOT SPECIFIED

Reference Standard:

UL RECOGNIZED

Maximum Repetitive Peak Reverse Voltage:

1200 V

Maximum Reverse Current:

30000 uA

Surface Mount:

NO

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Trade Compliance

ND260N12KHPSA1 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

PCN

Manufacturer Highlights

Infineon Technologies

Infineon Technologies AG is a leading global semiconductor manufacturer and provider of comprehensive solutions for automotive, industrial, and consumer applications. Founded in 1999, the company has grown to become one of the largest semiconductor manufacturers in Europe. Infineon is headquartered in Neubiberg, Germany with operations across countries in Europe and Asia Pacific. Infineon provides microelectronics products that address many of today's societal challenges affecting energy efficiency, mobility, security and connectivity. Over the past two decades Infineon has become a major player in the semiconductor industry with an impressive portfolio of innovative technologies. As one of only four companies that produce DRAM chips for automobiles, Infineon produces cutting-edge processors for use in advanced driver assistance systems (ADAS). Likewise, they specialize in providing advanced embedded secure microcontrollers that are essential for connected devices. Furthermore, they offer integrated circuit solutions for industrial power control such as motor controllers and embedded gate drivers.

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Management team

CEO

Jochen Hanebeck

Chief Financial Officer

Sven Schneider

Chief Marketing Officer

Andreas Urschitz

Manufacturer fab locations 19

Fab name Location Fab Initiation Wafer Capacity

Villach 300mm

Fabrication

Fab Initiation

2011

Austria

Villach

Wafer Capacity

11,000

2011

11,000

Kulim 2

Fabrication

Fab Initiation

2016

Malaysia

Kulim

Wafer Capacity

79,500

2016

79,500

Dresden - Module 3

Fabrication

Fab Initiation

1999

Germany

Dresden

Wafer Capacity

58,000

1999

58,000

Villach Building

Fabrication

Fab Initiation

2016

Austria

Villach

Wafer Capacity

2,000

2016

2,000

Regensburg

Fabrication

Fab Initiation

1986

Germany

Regensburg

Wafer Capacity

60,000

1986

60,000

Dresden 200 - Module 1

Fabrication

Fab Initiation

1995

Germany

Dresden

Wafer Capacity

28,000

1995

28,000

Dresden 200 - Module 2

Fabrication

Fab Initiation

1996

Germany

Dresden

Wafer Capacity

28,000

1996

28,000

Building 38

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Building 47

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Kulim 1

Fabrication

Fab Initiation

2006

Malaysia

Kulim

Wafer Capacity

110,000

2006

110,000

Mesa Facility

Fabrication

Fab Initiation

1990

USA

Mesa

Wafer Capacity

3,000

1990

3,000

Villach 150mm

Fabrication

Fab Initiation

1981

Austria

Villach

Wafer Capacity

35,000

1981

35,000

Villach 200mm

Fabrication

Fab Initiation

1995

Austria

Villach

Wafer Capacity

68,000

1995

68,000

Temecula

Fabrication

Fab Initiation

1995

USA

Temecula

Wafer Capacity

30,000

1995

30,000

Villach 300mm

Fabrication

Fab Initiation

2021

Austria

Villach

Wafer Capacity

2021

Villach 150mm

Fabrication

Fab Initiation

2018

Austria

Villach

Wafer Capacity

5,000

2018

5,000

Kulim 3

Fabrication

Fab Initiation

2024

Malaysia

Kulim

Wafer Capacity

2024

Fab 25

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

31,000

1995

31,000

Dresden - Module 4

Fabrication

Fab Initiation

2026

Germany

Dresden

Wafer Capacity

2026

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