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IRLML5103

Infineon Technologies

IRLML5103 by Infineon Technologies

IRLML5103 by Infineon Technologies is a P-CHANNEL MOSFET with a max drain current of 0.54 A and max power dissipation of 0.28 W. It is surface mountable and operates in enhancement mode. This transistor is commonly used in various electronic applications.

Median Price

$1.960

Lifecycle Status

Suppliers In-Stock

16

In-Stock Inventory

1k+

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Forefront Electronics and Design

USA . 500 parts In-Stock

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$1.960

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Netsource Technology, Inc.

USA . 4,647 parts In-Stock

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Beltway Electronics Company

USA . 3,040 parts In-Stock

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Bristol Electronics

USA . 2,625 parts In-Stock

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Velocity Electronics

USA . 2,287 parts In-Stock

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Mil-Aero Solutions, Inc.

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Resion

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Vyrian

USA . 1,441 parts In-Stock

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Halfin

Belgium . 1,160 parts In-Stock

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ComSIT Distribution GmbH

Germany . 900 parts In-Stock

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Manoshevitz Elec. Sales

Israel . 803 parts In-Stock

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Nova Conductors

Japan . 300 parts In-Stock

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Digiode

USA . 204 parts In-Stock

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Cogito LLC

Ukraine . 109 parts In-Stock

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NAC Semi

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Electronics Depot

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Corohmni

South Africa . 732 parts In-Stock

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$0.780

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Aztec Data Supply Inc.

USA . 212 parts In-Stock

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$1.790

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Modulus Dynamics

Lithuania . 7,120 parts In-Stock

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$1.975

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$1.896

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$1.817

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AZTECH Wire

Italy . 888 parts In-Stock

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$6.932

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Ampacity Inc.

Singapore . 347 parts In-Stock

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$65.050

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GreenTree Electronics

Israel . 12,000 parts In-Stock

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A-Z Elektronik GmbH

Germany . 7,160 parts In-Stock

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Kepictronics

USA . 6,597 parts In-Stock

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Alle Elektronik GmbH

Germany . 4,773 parts In-Stock

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Argo Parts USA

USA . 3,563 parts In-Stock

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Glotronic Ltd.

UK . 1,965 parts In-Stock

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Authorized Procurement Solutions

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Corphita

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Continental Prestige Electronics

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Bastille Electronics

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Overview

Discover the power of innovation with Infineon Technologies' IRLML5103. As a leading manufacturer in the industry, we pride ourselves on delivering exceptional quality and reliability. This P-CHANNEL transistor offers a single configuration and surface mount capability, making it perfect for a range of applications. With its enhancement mode operating mode and metal-oxide semiconductor technology, our IRLML5103 provides maximum efficiency and performance. Experience the value and benefits this product brings to your projects, from its high maximum drain current to its low power dissipation. Trust Infineon Technologies for superior solutions that propel your success.

Feature Benefit Bullets

Polarity or Channel Type: P-CHANNEL

P-CHANNEL transistors are known for their high efficiency and low voltage operation, making this product suitable for applications where power consumption is a concern.

Configuration: SINGLE

A single configuration simplifies the circuit design and reduces complexity, making this product easier to integrate into various applications.

Surface Mount: YES

Surface mount technology allows for compact design and easy PCB assembly, making this product suitable for space-constrained applications.

Operating Mode: ENHANCEMENT MODE

Enhancement mode transistors offer better control over the switching operation, providing precise and efficient performance in electronic circuits.

Maximum Drain Current (Abs) (ID): 0.54 A

With a maximum drain current of 0.54 A, this product can handle moderate power levels, making it suitable for a wide range of low to medium power applications.

Maximum Power Dissipation (Abs): 0.28 W

The low power dissipation of 0.28 W helps in reducing heat generation and improving overall efficiency in the circuit.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

Metal-oxide semiconductor technology offers high reliability and performance, ensuring stable operation of the transistor in various operating conditions.

Maximum Operating Temperature: 150 °C

With a maximum operating temperature of 150 °C, this product can withstand high temperature environments, making it suitable for industrial or automotive applications.

Technical Specifications

Other Function Transistors IRLML5103 attributes and parameters. Explore more Other Function Transistors devices from Infineon Technologies

Specs

Configuration:

Maximum Drain Current (Abs) (ID):

.54 A

Maximum Drain Current (ID):

.54 A

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Sub-Category:

Other Transistors

Surface Mount:

YES

Trade Compliance

IRLML5103 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Infineon Technologies

Infineon Technologies AG is a leading global semiconductor manufacturer and provider of comprehensive solutions for automotive, industrial, and consumer applications. Founded in 1999, the company has grown to become one of the largest semiconductor manufacturers in Europe. Infineon is headquartered in Neubiberg, Germany with operations across countries in Europe and Asia Pacific. Infineon provides microelectronics products that address many of today's societal challenges affecting energy efficiency, mobility, security and connectivity. Over the past two decades Infineon has become a major player in the semiconductor industry with an impressive portfolio of innovative technologies. As one of only four companies that produce DRAM chips for automobiles, Infineon produces cutting-edge processors for use in advanced driver assistance systems (ADAS). Likewise, they specialize in providing advanced embedded secure microcontrollers that are essential for connected devices. Furthermore, they offer integrated circuit solutions for industrial power control such as motor controllers and embedded gate drivers.

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Management team

CEO

Jochen Hanebeck

Chief Financial Officer

Sven Schneider

Chief Marketing Officer

Andreas Urschitz

Manufacturer fab locations 19

Fab name Location Fab Initiation Wafer Capacity

Villach 300mm

Fabrication

Fab Initiation

2011

Austria

Villach

Wafer Capacity

11,000

2011

11,000

Kulim 2

Fabrication

Fab Initiation

2016

Malaysia

Kulim

Wafer Capacity

79,500

2016

79,500

Dresden - Module 3

Fabrication

Fab Initiation

1999

Germany

Dresden

Wafer Capacity

58,000

1999

58,000

Villach Building

Fabrication

Fab Initiation

2016

Austria

Villach

Wafer Capacity

2,000

2016

2,000

Regensburg

Fabrication

Fab Initiation

1986

Germany

Regensburg

Wafer Capacity

60,000

1986

60,000

Dresden 200 - Module 1

Fabrication

Fab Initiation

1995

Germany

Dresden

Wafer Capacity

28,000

1995

28,000

Dresden 200 - Module 2

Fabrication

Fab Initiation

1996

Germany

Dresden

Wafer Capacity

28,000

1996

28,000

Building 38

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Building 47

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Kulim 1

Fabrication

Fab Initiation

2006

Malaysia

Kulim

Wafer Capacity

110,000

2006

110,000

Mesa Facility

Fabrication

Fab Initiation

1990

USA

Mesa

Wafer Capacity

3,000

1990

3,000

Villach 150mm

Fabrication

Fab Initiation

1981

Austria

Villach

Wafer Capacity

35,000

1981

35,000

Villach 200mm

Fabrication

Fab Initiation

1995

Austria

Villach

Wafer Capacity

68,000

1995

68,000

Temecula

Fabrication

Fab Initiation

1995

USA

Temecula

Wafer Capacity

30,000

1995

30,000

Villach 300mm

Fabrication

Fab Initiation

2021

Austria

Villach

Wafer Capacity

2021

Villach 150mm

Fabrication

Fab Initiation

2018

Austria

Villach

Wafer Capacity

5,000

2018

5,000

Kulim 3

Fabrication

Fab Initiation

2024

Malaysia

Kulim

Wafer Capacity

2024

Fab 25

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

31,000

1995

31,000

Dresden - Module 4

Fabrication

Fab Initiation

2026

Germany

Dresden

Wafer Capacity

2026

Category top products 20

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