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IDH10S120AKSA1

Infineon Technologies

IDH10S120AKSA1 by Infineon Technologies

IDH10S120AKSA1 by Infineon Technologies is a Schottky rectifier diode with 1200V reverse voltage and 10A output current. It operates b/w -55°C to 175°C, making it suitable for high-temperature applications. The diode's silicon carbide element and flange mount package body ensure reliable performance in various electronic circuits.

Median Price

$8.975

Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 130 parts In-Stock

1+ parts

-

100+ parts

$7.180

1k+ parts

$6.430

10k+ parts

$6.050

130

-

$7.180

$6.430

$6.050

DigiKey

USA . 130 parts In-Stock

1+ parts

-

100+ parts

$9.450

1k+ parts

-

10k+ parts

-

130

-

$9.450

-

-

Verical

USA . 130 parts In-Stock

1+ parts

-

100+ parts

$8.975

1k+ parts

$8.037

10k+ parts

$7.563

130

-

$8.975

$8.037

$7.563

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 52 parts In-Stock

1+ parts

$7.600

100+ parts

-

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-

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52

$7.600

-

-

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Vyrian

USA . 2,755 parts In-Stock

1+ parts

-

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2,755

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Nova Conductors

Japan . 500 parts In-Stock

1+ parts

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500

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Modulus Dynamics

Lithuania . 10,299 parts In-Stock

1+ parts

$0.129

100+ parts

$0.124

1k+ parts

$0.119

10k+ parts

-

10,299

$0.129

$0.124

$0.119

-

Ampacity Inc.

Singapore . 130 parts In-Stock

1+ parts

$6.800

100+ parts

-

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-

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130

$6.800

-

-

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Corphita

USA . 362 parts In-Stock

1+ parts

$7.200

100+ parts

-

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-

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362

$7.200

-

-

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Microchip USA

USA . 9,185 parts In-Stock

1+ parts

$21.504

100+ parts

-

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9,185

$21.504

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AZTECH Wire

Italy . 1,159 parts In-Stock

1+ parts

$22.190

100+ parts

-

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-

10k+ parts

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1,159

$22.190

-

-

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Andel Nordic

Denmark . 53 parts In-Stock

1+ parts

$50.060

100+ parts

-

1k+ parts

$35.041

10k+ parts

$35.041

53

$50.060

-

$35.041

$35.041

QUARKTWIN TECHNOLOGY LTD

USA . 15,471 parts In-Stock

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15,471

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Perfect Parts

USA . 560 parts In-Stock

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560

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Netroflash

USA . 100 parts In-Stock

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100

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Overview

Discover the power of Infineon Technologies with the IDH10S120AKSA1, a top-of-the-line Schottky rectifier diode that guarantees unmatched quality and reliability. Ideal for a wide range of applications, this product offers customers superior performance and efficiency, making it a valuable addition to any project. With a maximum output current of 10A and a maximum repetitive peak reverse voltage of 1200V, the IDH10S120AKSA1 is designed to meet the most demanding requirements. Trust in Infineon Technologies to deliver cutting-edge technology that exceeds expectations every time.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material makes the package lightweight and durable, ideal for applications where weight and durability are important factors.

Maximum Operating Temperature: 175 °C

With a high maximum operating temperature of 175°C, this diode can withstand high temperature environments, making it suitable for a wide range of applications.

Diode Type: RECTIFIER DIODE

Being a rectifier diode, this product is designed for converting AC to DC current efficiently, making it a reliable choice for power supply and rectification applications.

Technology: SCHOTTKY

The Schottky technology ensures low forward voltage drop and fast switching speed, making this diode suitable for high-frequency applications and power conversion tasks.

Maximum Repetitive Peak Reverse Voltage: 1200 V

With a high maximum repetitive peak reverse voltage of 1200V, this diode can handle high voltage spikes and surges, making it a reliable choice for voltage regulation and surge protection.

Technical Specifications

Diodes & Rectifiers IDH10S120AKSA1 attributes and parameters. Explore more Diodes & Rectifiers devices from Infineon Technologies

Specs

Application:

GENERAL PURPOSE

Case Connection:

CATHODE

Config:

SINGLE

Diode Element Material:

SILICON CARBIDE

Diode Type:

JEDEC-95 Code:

TO-220AC

JESD-30 Code:

R-PSFM-T2

Moisture Sensitivity Level (MSL):

NOT APPLICABLE

Maximum Non Repetitive Peak Forward Current:

58 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

2

Maximum Operating Temperature:

175 Cel

Minimum Operating Temperature:

-55 Cel

Maximum Output Current:

10 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

FLANGE MOUNT

Peak Reflow Temperature (C):

NOT SPECIFIED

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

1200 V

Surface Mount:

NO

Technology:

SCHOTTKY

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Trade Compliance

IDH10S120AKSA1 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

Manufacturer Highlights

Infineon Technologies

Infineon Technologies AG is a leading global semiconductor manufacturer and provider of comprehensive solutions for automotive, industrial, and consumer applications. Founded in 1999, the company has grown to become one of the largest semiconductor manufacturers in Europe. Infineon is headquartered in Neubiberg, Germany with operations across countries in Europe and Asia Pacific. Infineon provides microelectronics products that address many of today's societal challenges affecting energy efficiency, mobility, security and connectivity. Over the past two decades Infineon has become a major player in the semiconductor industry with an impressive portfolio of innovative technologies. As one of only four companies that produce DRAM chips for automobiles, Infineon produces cutting-edge processors for use in advanced driver assistance systems (ADAS). Likewise, they specialize in providing advanced embedded secure microcontrollers that are essential for connected devices. Furthermore, they offer integrated circuit solutions for industrial power control such as motor controllers and embedded gate drivers.

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Management team

CEO

Jochen Hanebeck

Chief Financial Officer

Sven Schneider

Chief Marketing Officer

Andreas Urschitz

Manufacturer fab locations 19

Fab name Location Fab Initiation Wafer Capacity

Villach 300mm

Fabrication

Fab Initiation

2011

Austria

Villach

Wafer Capacity

11,000

2011

11,000

Kulim 2

Fabrication

Fab Initiation

2016

Malaysia

Kulim

Wafer Capacity

79,500

2016

79,500

Dresden - Module 3

Fabrication

Fab Initiation

1999

Germany

Dresden

Wafer Capacity

58,000

1999

58,000

Villach Building

Fabrication

Fab Initiation

2016

Austria

Villach

Wafer Capacity

2,000

2016

2,000

Regensburg

Fabrication

Fab Initiation

1986

Germany

Regensburg

Wafer Capacity

60,000

1986

60,000

Dresden 200 - Module 1

Fabrication

Fab Initiation

1995

Germany

Dresden

Wafer Capacity

28,000

1995

28,000

Dresden 200 - Module 2

Fabrication

Fab Initiation

1996

Germany

Dresden

Wafer Capacity

28,000

1996

28,000

Building 38

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Building 47

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Kulim 1

Fabrication

Fab Initiation

2006

Malaysia

Kulim

Wafer Capacity

110,000

2006

110,000

Mesa Facility

Fabrication

Fab Initiation

1990

USA

Mesa

Wafer Capacity

3,000

1990

3,000

Villach 150mm

Fabrication

Fab Initiation

1981

Austria

Villach

Wafer Capacity

35,000

1981

35,000

Villach 200mm

Fabrication

Fab Initiation

1995

Austria

Villach

Wafer Capacity

68,000

1995

68,000

Temecula

Fabrication

Fab Initiation

1995

USA

Temecula

Wafer Capacity

30,000

1995

30,000

Villach 300mm

Fabrication

Fab Initiation

2021

Austria

Villach

Wafer Capacity

2021

Villach 150mm

Fabrication

Fab Initiation

2018

Austria

Villach

Wafer Capacity

5,000

2018

5,000

Kulim 3

Fabrication

Fab Initiation

2024

Malaysia

Kulim

Wafer Capacity

2024

Fab 25

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

31,000

1995

31,000

Dresden - Module 4

Fabrication

Fab Initiation

2026

Germany

Dresden

Wafer Capacity

2026

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