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DD350N12K

Infineon Technologies

DD350N12K by Infineon Technologies

Infineon Technologies' DD350N12K is a series connected rectifier diode with 2 elements, max output current of 350A, and max repetitive peak reverse voltage of 1200V. Ideal for medium power applications, it operates b/w -40 to 150°C and has a max forward voltage of 1.28V.

Median Price

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Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 1,421 parts In-Stock

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Nova Conductors

Japan . 1,000 parts In-Stock

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Digiode

USA . 736 parts In-Stock

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Ashlea Components Ltd

UK . 3 parts In-Stock

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Aztec Data Supply Inc.

USA . 4,390 parts In-Stock

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$0.050

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$0.050

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Modulus Dynamics

Lithuania . 8,012 parts In-Stock

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$0.094

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$0.090

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$0.086

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8,012

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AZTECH Wire

Italy . 784 parts In-Stock

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$13.371

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Continental Prestige Electronics

USA . 6,396 parts In-Stock

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Glotronic Ltd.

UK . 3,900 parts In-Stock

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Argo Parts USA

USA . 1,195 parts In-Stock

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Corphita

USA . 250 parts In-Stock

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Bastille Electronics

Australia . 120 parts In-Stock

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Overview

Experience the power of innovation with the DD350N12K by Infineon Technologies. This high-quality diode & rectifier offers unmatched performance and reliability, thanks to the expertise of its manufacturer. Ideal for medium power applications, this product provides a seamless solution for your electrical needs. With a maximum output current of 350A and a maximum repetitive peak reverse voltage of 1200V, the DD350N12K ensures optimal functionality and efficiency. Elevate your projects with this versatile diode & rectifier that delivers value and benefits beyond compare.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/epoxy material ensures durability and protection for the diodes, making them suitable for medium power applications.

Config: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS

Series connected configuration with center tap design and 2 elements allows for more efficient power distribution and performance.

Maximum Reverse Current: 30000 uA

High maximum reverse current rating indicates the diodes' ability to handle large reverse currents, making them reliable in various circuit conditions.

Maximum Operating Temperature: 150 °C

With a high operating temperature range of -40 to 150°C, this product can function effectively in a wide range of environments.

Maximum Repetitive Peak Reverse Voltage: 1200 V

High maximum repetitive peak reverse voltage ensures the diodes can withstand high voltage fluctuations, making them suitable for demanding applications.

Technical Specifications

Diodes & Rectifiers DD350N12K attributes and parameters. Explore more Diodes & Rectifiers devices from Infineon Technologies

Specs

Additional Features:

HIGH RELIABILITY

Application:

MEDIUM POWER

Case Connection:

ISOLATED

Config:

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

1.28 V

JESD-30 Code:

R-PUFM-X3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Forward Current:

11000 A

No. of Elements:

2

No. of Phases:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-40 Cel

Maximum Output Current:

350 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

FLANGE MOUNT

Reference Standard:

IEC-61140; UL RECOGNIZED

Maximum Repetitive Peak Reverse Voltage:

1200 V

Maximum Reverse Current:

30000 uA

Sub-Category:

Rectifier Diodes

Surface Mount:

NO

Terminal Form:

Terminal Position:

Trade Compliance

DD350N12K Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

Manufacturer Highlights

Infineon Technologies

Infineon Technologies AG is a leading global semiconductor manufacturer and provider of comprehensive solutions for automotive, industrial, and consumer applications. Founded in 1999, the company has grown to become one of the largest semiconductor manufacturers in Europe. Infineon is headquartered in Neubiberg, Germany with operations across countries in Europe and Asia Pacific. Infineon provides microelectronics products that address many of today's societal challenges affecting energy efficiency, mobility, security and connectivity. Over the past two decades Infineon has become a major player in the semiconductor industry with an impressive portfolio of innovative technologies. As one of only four companies that produce DRAM chips for automobiles, Infineon produces cutting-edge processors for use in advanced driver assistance systems (ADAS). Likewise, they specialize in providing advanced embedded secure microcontrollers that are essential for connected devices. Furthermore, they offer integrated circuit solutions for industrial power control such as motor controllers and embedded gate drivers.

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Management team

CEO

Jochen Hanebeck

Chief Financial Officer

Sven Schneider

Chief Marketing Officer

Andreas Urschitz

Manufacturer fab locations 19

Fab name Location Fab Initiation Wafer Capacity

Villach 300mm

Fabrication

Fab Initiation

2011

Austria

Villach

Wafer Capacity

11,000

2011

11,000

Kulim 2

Fabrication

Fab Initiation

2016

Malaysia

Kulim

Wafer Capacity

79,500

2016

79,500

Dresden - Module 3

Fabrication

Fab Initiation

1999

Germany

Dresden

Wafer Capacity

58,000

1999

58,000

Villach Building

Fabrication

Fab Initiation

2016

Austria

Villach

Wafer Capacity

2,000

2016

2,000

Regensburg

Fabrication

Fab Initiation

1986

Germany

Regensburg

Wafer Capacity

60,000

1986

60,000

Dresden 200 - Module 1

Fabrication

Fab Initiation

1995

Germany

Dresden

Wafer Capacity

28,000

1995

28,000

Dresden 200 - Module 2

Fabrication

Fab Initiation

1996

Germany

Dresden

Wafer Capacity

28,000

1996

28,000

Building 38

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Building 47

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Kulim 1

Fabrication

Fab Initiation

2006

Malaysia

Kulim

Wafer Capacity

110,000

2006

110,000

Mesa Facility

Fabrication

Fab Initiation

1990

USA

Mesa

Wafer Capacity

3,000

1990

3,000

Villach 150mm

Fabrication

Fab Initiation

1981

Austria

Villach

Wafer Capacity

35,000

1981

35,000

Villach 200mm

Fabrication

Fab Initiation

1995

Austria

Villach

Wafer Capacity

68,000

1995

68,000

Temecula

Fabrication

Fab Initiation

1995

USA

Temecula

Wafer Capacity

30,000

1995

30,000

Villach 300mm

Fabrication

Fab Initiation

2021

Austria

Villach

Wafer Capacity

2021

Villach 150mm

Fabrication

Fab Initiation

2018

Austria

Villach

Wafer Capacity

5,000

2018

5,000

Kulim 3

Fabrication

Fab Initiation

2024

Malaysia

Kulim

Wafer Capacity

2024

Fab 25

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

31,000

1995

31,000

Dresden - Module 4

Fabrication

Fab Initiation

2026

Germany

Dresden

Wafer Capacity

2026

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