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D970N06T

Infineon Technologies

D970N06T by Infineon Technologies

D970N06T by Infineon Technologies is a single rectifier diode with 970A output current and 600V peak reverse voltage. Its ceramic, metal-sealed co-fired package makes it suitable for high-power applications. This surface-mount diode in disk button style is ideal for power supply units and industrial equipment.

Median Price

$77.300

Lifecycle Status

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3

In-Stock Inventory

< 1k

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Mouser Electronics

USA . 40 parts In-Stock

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$77.300

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40

$77.300

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Digiode

USA . 583 parts In-Stock

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$69.958

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583

$69.958

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Vyrian

USA . 272 parts In-Stock

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$73.640

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272

$73.640

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Modulus Dynamics

Lithuania . 3,320 parts In-Stock

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$0.117

100+ parts

$0.112

1k+ parts

$0.108

10k+ parts

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3,320

$0.117

$0.112

$0.108

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Corphita

USA . 691 parts In-Stock

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$66.276

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691

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Northwest PG Solutions

USA . 1,472 parts In-Stock

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Native Components

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504

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Perfect Parts

USA . 1 parts In-Stock

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Overview

Upgrade your electronics with the reliable D970N06T by Infineon Technologies. As a leader in diodes & rectifiers, Infineon Technologies ensures top-notch quality and performance in every product. The D970N06T is designed for maximum output current of 970A, ensuring efficient power management in various applications. With a maximum repetitive peak reverse voltage of 600V and a maximum non-repetitive peak forward current of 8800A, this rectifier diode offers unmatched reliability. Trust Infineon Technologies to deliver cutting-edge technology that meets your needs.

Feature Benefit Bullets

Package Body Material: CERAMIC, METAL-SEALED COFIRED

This material combination ensures high durability and reliability, making the diode suitable for long-term use in various applications.

Config: SINGLE

Simplifies the circuit design by providing a single diode in the package, making it easier to integrate into the overall system.

Surface Mount: YES

Facilitates easy and efficient mounting on circuit boards, saving installation time and effort.

Package Shape: ROUND

The round shape allows for compact and space-saving design, making it suitable for applications with limited space.

No. of Terminals: 2

Simplified circuit connections with only two terminals, reducing the risk of wiring errors and improving overall system reliability.

Package Style (Meter): DISK BUTTON

The disk button style provides a stable mounting surface, ensuring secure placement in the circuit.

Terminal Position: END

The end terminal position simplifies the connection process and ensures easy and reliable soldering or mounting.

Diode Type: RECTIFIER DIODE

As a rectifier diode, it is specifically designed for converting alternating current to direct current, making it ideal for power supply applications.

Maximum Output Current: 970 A

The high output current capacity allows the diode to handle large power loads effectively, making it suitable for high-power applications.

Terminal Form: NO LEAD

The no lead terminal form reduces the risk of lead breakage or bending, ensuring a more robust and reliable connection.

Maximum Repetitive Peak Reverse Voltage: 600 V

With a high peak reverse voltage, this diode can withstand reverse voltage spikes, ensuring protection for the circuit and components.

Maximum Non Repetitive Peak Forward Current: 8800 A

The high peak forward current rating allows the diode to handle short-term high current surges, making it suitable for demanding applications.

Diode Element Material: SILICON

Silicon is a common semiconductor material known for its reliability and efficiency, making this diode a dependable choice for various applications.

Technical Specifications

Diodes & Rectifiers D970N06T attributes and parameters. Explore more Diodes & Rectifiers devices from Infineon Technologies

Specs

Application:

GENERAL PURPOSE

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

JESD-30 Code:

O-CEDB-N2

Maximum Non Repetitive Peak Forward Current:

8800 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

2

Maximum Output Current:

970 A

Package Body Material:

CERAMIC, METAL-SEALED COFIRED

Package Shape:

Package Style (Meter):

DISK BUTTON

Peak Reflow Temperature (C):

NOT SPECIFIED

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

600 V

Surface Mount:

YES

Terminal Form:

Terminal Position:

END

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Trade Compliance

D970N06T Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

Manufacturer Highlights

Infineon Technologies

Infineon Technologies AG is a leading global semiconductor manufacturer and provider of comprehensive solutions for automotive, industrial, and consumer applications. Founded in 1999, the company has grown to become one of the largest semiconductor manufacturers in Europe. Infineon is headquartered in Neubiberg, Germany with operations across countries in Europe and Asia Pacific. Infineon provides microelectronics products that address many of today's societal challenges affecting energy efficiency, mobility, security and connectivity. Over the past two decades Infineon has become a major player in the semiconductor industry with an impressive portfolio of innovative technologies. As one of only four companies that produce DRAM chips for automobiles, Infineon produces cutting-edge processors for use in advanced driver assistance systems (ADAS). Likewise, they specialize in providing advanced embedded secure microcontrollers that are essential for connected devices. Furthermore, they offer integrated circuit solutions for industrial power control such as motor controllers and embedded gate drivers.

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Management team

CEO

Jochen Hanebeck

Chief Financial Officer

Sven Schneider

Chief Marketing Officer

Andreas Urschitz

Manufacturer fab locations 19

Fab name Location Fab Initiation Wafer Capacity

Villach 300mm

Fabrication

Fab Initiation

2011

Austria

Villach

Wafer Capacity

11,000

2011

11,000

Kulim 2

Fabrication

Fab Initiation

2016

Malaysia

Kulim

Wafer Capacity

79,500

2016

79,500

Dresden - Module 3

Fabrication

Fab Initiation

1999

Germany

Dresden

Wafer Capacity

58,000

1999

58,000

Villach Building

Fabrication

Fab Initiation

2016

Austria

Villach

Wafer Capacity

2,000

2016

2,000

Regensburg

Fabrication

Fab Initiation

1986

Germany

Regensburg

Wafer Capacity

60,000

1986

60,000

Dresden 200 - Module 1

Fabrication

Fab Initiation

1995

Germany

Dresden

Wafer Capacity

28,000

1995

28,000

Dresden 200 - Module 2

Fabrication

Fab Initiation

1996

Germany

Dresden

Wafer Capacity

28,000

1996

28,000

Building 38

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Building 47

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Kulim 1

Fabrication

Fab Initiation

2006

Malaysia

Kulim

Wafer Capacity

110,000

2006

110,000

Mesa Facility

Fabrication

Fab Initiation

1990

USA

Mesa

Wafer Capacity

3,000

1990

3,000

Villach 150mm

Fabrication

Fab Initiation

1981

Austria

Villach

Wafer Capacity

35,000

1981

35,000

Villach 200mm

Fabrication

Fab Initiation

1995

Austria

Villach

Wafer Capacity

68,000

1995

68,000

Temecula

Fabrication

Fab Initiation

1995

USA

Temecula

Wafer Capacity

30,000

1995

30,000

Villach 300mm

Fabrication

Fab Initiation

2021

Austria

Villach

Wafer Capacity

2021

Villach 150mm

Fabrication

Fab Initiation

2018

Austria

Villach

Wafer Capacity

5,000

2018

5,000

Kulim 3

Fabrication

Fab Initiation

2024

Malaysia

Kulim

Wafer Capacity

2024

Fab 25

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

31,000

1995

31,000

Dresden - Module 4

Fabrication

Fab Initiation

2026

Germany

Dresden

Wafer Capacity

2026

Category top products 20

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