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D931SH65TXPSA1

Infineon Technologies

D931SH65TXPSA1 by Infineon Technologies

D931SH65TXPSA1 by Infineon Technologies is a single rectifier diode with a max reverse voltage of 6500V and forward voltage of 5.6V. It has a high output current of 1220A, making it suitable for power applications requiring robust performance in temperatures ranging from 0 to 140°C. The diode's ceramic-metal-sealed co-fired construction ensures reliability in demanding environments.

Median Price

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Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

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Vyrian

USA . 6,704 parts In-Stock

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Digiode

USA . 390 parts In-Stock

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390

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Nova Conductors

Japan . 93 parts In-Stock

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Ampacity Inc.

Singapore . 1,394 parts In-Stock

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$0.010

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$0.010

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Modulus Dynamics

Lithuania . 13,055 parts In-Stock

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$0.064

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$0.061

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$0.059

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13,055

$0.064

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Aztec Data Supply Inc.

USA . 109 parts In-Stock

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$0.090

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109

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Corohmni

South Africa . 262 parts In-Stock

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$0.140

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262

$0.140

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Semicontronic

India . 369 parts In-Stock

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$3.010

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$2.935

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$2.920

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369

$3.010

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$2.920

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AZTECH Wire

Italy . 359 parts In-Stock

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$12.893

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Microchip USA

USA . 2,066 parts In-Stock

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$1,532.625

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Continental Prestige Electronics

USA . 4,193 parts In-Stock

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Argo Parts USA

USA . 3,961 parts In-Stock

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Bastille Electronics

Australia . 700 parts In-Stock

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Corphita

USA . 666 parts In-Stock

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Overview

Unleash the power of innovation with the D931SH65TXPSA1 by Infineon Technologies. This high-quality rectifier diode offers unmatched reliability and performance, making it the ideal choice for power applications. With a maximum reverse voltage of 6500V and a maximum output current of 1220A, this diode provides superior efficiency and durability. Whether you're in the automotive, industrial, or renewable energy sector, this diode is sure to meet your power needs. Trust in Infineon Technologies to deliver cutting-edge solutions that drive your success.

Feature Benefit Bullets

Package Body Material: CERAMIC, METAL-SEALED COFIRED

Provides excellent thermal properties, ensuring efficient heat dissipation and high reliability.

Maximum Reverse Current: 100000 uA

High reverse current capability allows for reliable operation in various applications.

Reverse Test Voltage: 6500 V

High reverse test voltage ensures protection against reverse voltage situations.

Maximum Forward Voltage (VF): 5.6 V

Low forward voltage drop results in efficient power conversion and minimal power loss.

Maximum Output Current: 1220 A

High output current capability makes it suitable for power applications requiring high current handling.

Diode Element Material: SILICON

Silicon diodes are widely used and provide good electrical characteristics, making this product a reliable choice.

Technical Specifications

Diodes & Rectifiers D931SH65TXPSA1 attributes and parameters. Explore more Diodes & Rectifiers devices from Infineon Technologies

Specs

Additional Features:

FREE WHEELING DIODE

Application:

POWER

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

5.6 V

JESD-30 Code:

O-CEDB-N2

Maximum Non Repetitive Peak Forward Current:

16000 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

2

Maximum Operating Temperature:

140 Cel

Minimum Operating Temperature:

0 Cel

Maximum Output Current:

1220 A

Package Body Material:

CERAMIC, METAL-SEALED COFIRED

Package Shape:

Package Style (Meter):

DISK BUTTON

Peak Reflow Temperature (C):

NOT SPECIFIED

Maximum Repetitive Peak Reverse Voltage:

6500 V

Maximum Reverse Current:

100000 uA

Reverse Test Voltage:

6500 V

Surface Mount:

YES

Terminal Form:

Terminal Position:

END

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Trade Compliance

D931SH65TXPSA1 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

PCN

Manufacturer Highlights

Infineon Technologies

Infineon Technologies AG is a leading global semiconductor manufacturer and provider of comprehensive solutions for automotive, industrial, and consumer applications. Founded in 1999, the company has grown to become one of the largest semiconductor manufacturers in Europe. Infineon is headquartered in Neubiberg, Germany with operations across countries in Europe and Asia Pacific. Infineon provides microelectronics products that address many of today's societal challenges affecting energy efficiency, mobility, security and connectivity. Over the past two decades Infineon has become a major player in the semiconductor industry with an impressive portfolio of innovative technologies. As one of only four companies that produce DRAM chips for automobiles, Infineon produces cutting-edge processors for use in advanced driver assistance systems (ADAS). Likewise, they specialize in providing advanced embedded secure microcontrollers that are essential for connected devices. Furthermore, they offer integrated circuit solutions for industrial power control such as motor controllers and embedded gate drivers.

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Management team

CEO

Jochen Hanebeck

Chief Financial Officer

Sven Schneider

Chief Marketing Officer

Andreas Urschitz

Manufacturer fab locations 19

Fab name Location Fab Initiation Wafer Capacity

Villach 300mm

Fabrication

Fab Initiation

2011

Austria

Villach

Wafer Capacity

11,000

2011

11,000

Kulim 2

Fabrication

Fab Initiation

2016

Malaysia

Kulim

Wafer Capacity

79,500

2016

79,500

Dresden - Module 3

Fabrication

Fab Initiation

1999

Germany

Dresden

Wafer Capacity

58,000

1999

58,000

Villach Building

Fabrication

Fab Initiation

2016

Austria

Villach

Wafer Capacity

2,000

2016

2,000

Regensburg

Fabrication

Fab Initiation

1986

Germany

Regensburg

Wafer Capacity

60,000

1986

60,000

Dresden 200 - Module 1

Fabrication

Fab Initiation

1995

Germany

Dresden

Wafer Capacity

28,000

1995

28,000

Dresden 200 - Module 2

Fabrication

Fab Initiation

1996

Germany

Dresden

Wafer Capacity

28,000

1996

28,000

Building 38

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Building 47

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Kulim 1

Fabrication

Fab Initiation

2006

Malaysia

Kulim

Wafer Capacity

110,000

2006

110,000

Mesa Facility

Fabrication

Fab Initiation

1990

USA

Mesa

Wafer Capacity

3,000

1990

3,000

Villach 150mm

Fabrication

Fab Initiation

1981

Austria

Villach

Wafer Capacity

35,000

1981

35,000

Villach 200mm

Fabrication

Fab Initiation

1995

Austria

Villach

Wafer Capacity

68,000

1995

68,000

Temecula

Fabrication

Fab Initiation

1995

USA

Temecula

Wafer Capacity

30,000

1995

30,000

Villach 300mm

Fabrication

Fab Initiation

2021

Austria

Villach

Wafer Capacity

2021

Villach 150mm

Fabrication

Fab Initiation

2018

Austria

Villach

Wafer Capacity

5,000

2018

5,000

Kulim 3

Fabrication

Fab Initiation

2024

Malaysia

Kulim

Wafer Capacity

2024

Fab 25

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

31,000

1995

31,000

Dresden - Module 4

Fabrication

Fab Initiation

2026

Germany

Dresden

Wafer Capacity

2026

Category top products 20

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