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D1031SH45TXPSA1

Infineon Technologies

D1031SH45TXPSA1 by Infineon Technologies

D1031SH45TXPSA1 by Infineon Technologies is a single rectifier diode with a max reverse voltage of 4500V and forward voltage of 4.2V. It has a max output current of 1460A, making it suitable for power applications requiring high voltage and current capabilities. The diode's ceramic-metal-sealed co-fired package body ensures reliable performance in temperatures ranging from 0 to 140°C.

Median Price

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Lifecycle Status

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3

In-Stock Inventory

1k+

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Vyrian

USA . 6,353 parts In-Stock

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Digiode

USA . 531 parts In-Stock

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Nova Conductors

Japan . 10 parts In-Stock

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Ampacity Inc.

Singapore . 318 parts In-Stock

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$0.010

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Aztec Data Supply Inc.

USA . 71 parts In-Stock

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$0.010

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Modulus Dynamics

Lithuania . 11,173 parts In-Stock

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$0.064

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$0.061

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$0.059

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Corohmni

South Africa . 467 parts In-Stock

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467

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Semicontronic

India . 681 parts In-Stock

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$2.010

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$1.960

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$1.950

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AZTECH Wire

Italy . 650 parts In-Stock

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$13.488

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Component Stockers USA

USA . 378 parts In-Stock

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$99.990

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Microchip USA

USA . 3,262 parts In-Stock

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Continental Prestige Electronics

USA . 6,069 parts In-Stock

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Argo Parts USA

USA . 3,135 parts In-Stock

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Corphita

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Bastille Electronics

Australia . 300 parts In-Stock

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Overview

Unlock the power of Infineon Technologies with the D1031SH45TXPSA1 diode. This high-quality product boasts a ceramic, metal-sealed co-fired package for durability and reliability. Perfect for power applications, this rectifier diode offers a maximum output current of 1460 A and a maximum reverse test voltage of 4500 V. With Infineon's reputation for excellence in manufacturing, you can trust that this diode will deliver superior performance. Experience the value and benefits of Infineon's D1031SH45TXPSA1 in your next project.

Feature Benefit Bullets

Package Body Material: CERAMIC, METAL-SEALED COFIRED

Provides excellent durability and protection for the diode, ensuring a longer lifespan.

Surface Mount: YES

Allows for easy and convenient mounting on circuit boards, saving space and enabling efficient assembly.

Maximum Reverse Current: 100000 uA

High reverse current capability allows for reliable performance in various circuit applications.

Package Shape: ROUND

Round shape can allow for better heat dissipation and mechanical stability within the circuit.

Reverse Test Voltage: 4500 V

High reverse test voltage ensures the diode can handle large reverse voltages, making it suitable for power applications.

Application: POWER

Specifically designed for power applications, ensuring optimal performance and efficiency in power circuits.

Maximum Operating Temperature: 140 °C

High maximum operating temperature allows the diode to function in a wide range of environments without overheating.

Diode Type: RECTIFIER DIODE

Rectifier diode design allows for efficient conversion of alternating current (AC) to direct current (DC) in power supply circuits.

Maximum Forward Voltage (VF): 4.2 V

Low forward voltage drop helps reduce power losses and improves overall efficiency in power systems.

Maximum Output Current: 1460 A

High output current capability allows for handling large electrical loads with ease.

Maximum Non Repetitive Peak Forward Current: 23000 A

High peak forward current rating ensures the diode can handle sudden surge currents without damage.

Diode Element Material: SILICON

Silicon material offers high performance, reliability, and efficiency in power diode applications.

Technical Specifications

Diodes & Rectifiers D1031SH45TXPSA1 attributes and parameters. Explore more Diodes & Rectifiers devices from Infineon Technologies

Specs

Additional Features:

FREE WHEELING DIODE

Application:

POWER

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

4.2 V

JESD-30 Code:

O-CEDB-N2

Maximum Non Repetitive Peak Forward Current:

23000 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

2

Maximum Operating Temperature:

140 Cel

Minimum Operating Temperature:

0 Cel

Maximum Output Current:

1460 A

Package Body Material:

CERAMIC, METAL-SEALED COFIRED

Package Shape:

Package Style (Meter):

DISK BUTTON

Peak Reflow Temperature (C):

NOT SPECIFIED

Maximum Repetitive Peak Reverse Voltage:

4500 V

Maximum Reverse Current:

100000 uA

Reverse Test Voltage:

4500 V

Surface Mount:

YES

Terminal Form:

Terminal Position:

END

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Trade Compliance

D1031SH45TXPSA1 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

PCN

Manufacturer Highlights

Infineon Technologies

Infineon Technologies AG is a leading global semiconductor manufacturer and provider of comprehensive solutions for automotive, industrial, and consumer applications. Founded in 1999, the company has grown to become one of the largest semiconductor manufacturers in Europe. Infineon is headquartered in Neubiberg, Germany with operations across countries in Europe and Asia Pacific. Infineon provides microelectronics products that address many of today's societal challenges affecting energy efficiency, mobility, security and connectivity. Over the past two decades Infineon has become a major player in the semiconductor industry with an impressive portfolio of innovative technologies. As one of only four companies that produce DRAM chips for automobiles, Infineon produces cutting-edge processors for use in advanced driver assistance systems (ADAS). Likewise, they specialize in providing advanced embedded secure microcontrollers that are essential for connected devices. Furthermore, they offer integrated circuit solutions for industrial power control such as motor controllers and embedded gate drivers.

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Management team

CEO

Jochen Hanebeck

Chief Financial Officer

Sven Schneider

Chief Marketing Officer

Andreas Urschitz

Manufacturer fab locations 19

Fab name Location Fab Initiation Wafer Capacity

Villach 300mm

Fabrication

Fab Initiation

2011

Austria

Villach

Wafer Capacity

11,000

2011

11,000

Kulim 2

Fabrication

Fab Initiation

2016

Malaysia

Kulim

Wafer Capacity

79,500

2016

79,500

Dresden - Module 3

Fabrication

Fab Initiation

1999

Germany

Dresden

Wafer Capacity

58,000

1999

58,000

Villach Building

Fabrication

Fab Initiation

2016

Austria

Villach

Wafer Capacity

2,000

2016

2,000

Regensburg

Fabrication

Fab Initiation

1986

Germany

Regensburg

Wafer Capacity

60,000

1986

60,000

Dresden 200 - Module 1

Fabrication

Fab Initiation

1995

Germany

Dresden

Wafer Capacity

28,000

1995

28,000

Dresden 200 - Module 2

Fabrication

Fab Initiation

1996

Germany

Dresden

Wafer Capacity

28,000

1996

28,000

Building 38

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Building 47

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Kulim 1

Fabrication

Fab Initiation

2006

Malaysia

Kulim

Wafer Capacity

110,000

2006

110,000

Mesa Facility

Fabrication

Fab Initiation

1990

USA

Mesa

Wafer Capacity

3,000

1990

3,000

Villach 150mm

Fabrication

Fab Initiation

1981

Austria

Villach

Wafer Capacity

35,000

1981

35,000

Villach 200mm

Fabrication

Fab Initiation

1995

Austria

Villach

Wafer Capacity

68,000

1995

68,000

Temecula

Fabrication

Fab Initiation

1995

USA

Temecula

Wafer Capacity

30,000

1995

30,000

Villach 300mm

Fabrication

Fab Initiation

2021

Austria

Villach

Wafer Capacity

2021

Villach 150mm

Fabrication

Fab Initiation

2018

Austria

Villach

Wafer Capacity

5,000

2018

5,000

Kulim 3

Fabrication

Fab Initiation

2024

Malaysia

Kulim

Wafer Capacity

2024

Fab 25

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

31,000

1995

31,000

Dresden - Module 4

Fabrication

Fab Initiation

2026

Germany

Dresden

Wafer Capacity

2026

Category top products 20

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