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BCR08PN-E6327

Infineon Technologies

BCR08PN-E6327 by Infineon Technologies

Infineon Technologies' BCR08PN-E6327 is a small signal bipolar junction transistor (BJT) with NPN and PNP polarity. It has a max collector-emitter voltage of 50V, min DC current gain of 70, and can handle a max collector current of 0.1A. This transistor is commonly used for switching applications due to its built-in resistor and high transition frequency of 170MHz.

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Corohmni

South Africa . 16 parts In-Stock

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Modulus Dynamics

Lithuania . 3,646 parts In-Stock

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Aztec Data Supply Inc.

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Ampacity Inc.

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AZTECH Wire

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Denmark . 5,389 parts In-Stock

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Overview

Looking for a high-quality small signal bipolar junction transistor? Look no further than the BCR08PN-E6327 by Infineon Technologies. With its separate configuration and built-in resistor, this transistor is perfect for switching applications. Its surface mount design and gull wing terminals make it easy to install, while its maximum power dissipation of 0.25W ensures reliable performance. Plus, with a maximum collector-emitter voltage of 50V and a minimum DC current gain of 70, you can trust that this transistor will deliver outstanding results. Upgrade your electronic projects with the BCR08PN-E6327 and experience the value and benefits it brings.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Durable and lightweight material, suitable for various applications.

Polarity or Channel Type: NPN AND PNP

Versatile design that can be used for both NPN and PNP applications.

Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

Convenient design with built-in resistors for specific applications.

Transistor Application: SWITCHING

Suitable for switching applications, providing fast response times.

Surface Mount: YES

Easily mountable on PCBs, saving space and providing efficient usage.

Package Shape: RECTANGULAR

Space-saving design that fits well in compact electronic devices.

No. of Elements: 2

Dual elements allow for multiple functionalities in one component.

Maximum Power Dissipation (Abs): 0.25 W

Efficient power handling capabilities for reliable performance.

Minimum DC Current Gain (hFE): 70

Consistent and reliable performance with a minimum current gain.

Maximum Collector-Emitter Voltage: 50 V

Can handle higher voltages for specific applications.

Transistor Element Material: SILICON

High-quality material providing reliable transistor operation.

Maximum Collector Current (IC): 0.1 A

Suitable current handling capacity for various applications.

Terminal Finish: MATTE TIN

Provides good contact surface for soldering and enhances durability.

Terminal Position: DUAL

Dual terminal position for versatile connection options.

Peak Reflow Temperature °C: 260

Can withstand high temperatures during soldering process.

Nominal Transition Frequency (fT): 170 MHz

High transition frequency for fast switching applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) BCR08PN-E6327 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Infineon Technologies

Specs

Additional Features:

BUILT-IN BIAS RESISTOR RATIO IS 21.364

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

50 V

Minimum DC Current Gain (hFE):

70

JESD-30 Code:

R-PDSO-G6

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

2

No. of Terminals:

6

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

BIP General Purpose Small Signal

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

BCR08PN-E6327 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Infineon Technologies

Infineon Technologies AG is a leading global semiconductor manufacturer and provider of comprehensive solutions for automotive, industrial, and consumer applications. Founded in 1999, the company has grown to become one of the largest semiconductor manufacturers in Europe. Infineon is headquartered in Neubiberg, Germany with operations across countries in Europe and Asia Pacific. Infineon provides microelectronics products that address many of today's societal challenges affecting energy efficiency, mobility, security and connectivity. Over the past two decades Infineon has become a major player in the semiconductor industry with an impressive portfolio of innovative technologies. As one of only four companies that produce DRAM chips for automobiles, Infineon produces cutting-edge processors for use in advanced driver assistance systems (ADAS). Likewise, they specialize in providing advanced embedded secure microcontrollers that are essential for connected devices. Furthermore, they offer integrated circuit solutions for industrial power control such as motor controllers and embedded gate drivers.

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Management team

CEO

Jochen Hanebeck

Chief Financial Officer

Sven Schneider

Chief Marketing Officer

Andreas Urschitz

Manufacturer fab locations 19

Fab name Location Fab Initiation Wafer Capacity

Villach 300mm

Fabrication

Fab Initiation

2011

Austria

Villach

Wafer Capacity

11,000

2011

11,000

Kulim 2

Fabrication

Fab Initiation

2016

Malaysia

Kulim

Wafer Capacity

79,500

2016

79,500

Dresden - Module 3

Fabrication

Fab Initiation

1999

Germany

Dresden

Wafer Capacity

58,000

1999

58,000

Villach Building

Fabrication

Fab Initiation

2016

Austria

Villach

Wafer Capacity

2,000

2016

2,000

Regensburg

Fabrication

Fab Initiation

1986

Germany

Regensburg

Wafer Capacity

60,000

1986

60,000

Dresden 200 - Module 1

Fabrication

Fab Initiation

1995

Germany

Dresden

Wafer Capacity

28,000

1995

28,000

Dresden 200 - Module 2

Fabrication

Fab Initiation

1996

Germany

Dresden

Wafer Capacity

28,000

1996

28,000

Building 38

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Building 47

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Kulim 1

Fabrication

Fab Initiation

2006

Malaysia

Kulim

Wafer Capacity

110,000

2006

110,000

Mesa Facility

Fabrication

Fab Initiation

1990

USA

Mesa

Wafer Capacity

3,000

1990

3,000

Villach 150mm

Fabrication

Fab Initiation

1981

Austria

Villach

Wafer Capacity

35,000

1981

35,000

Villach 200mm

Fabrication

Fab Initiation

1995

Austria

Villach

Wafer Capacity

68,000

1995

68,000

Temecula

Fabrication

Fab Initiation

1995

USA

Temecula

Wafer Capacity

30,000

1995

30,000

Villach 300mm

Fabrication

Fab Initiation

2021

Austria

Villach

Wafer Capacity

2021

Villach 150mm

Fabrication

Fab Initiation

2018

Austria

Villach

Wafer Capacity

5,000

2018

5,000

Kulim 3

Fabrication

Fab Initiation

2024

Malaysia

Kulim

Wafer Capacity

2024

Fab 25

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

31,000

1995

31,000

Dresden - Module 4

Fabrication

Fab Initiation

2026

Germany

Dresden

Wafer Capacity

2026

Category top products 20

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