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BAV199E6327HTSA1

Infineon Technologies

BAV199E6327HTSA1 by Infineon Technologies

Infineon's BAV199E6327HTSA1 is a series-connected diode with 2 elements, featuring a max reverse recovery time of 1.5 us and a max output current of 0.2 A. Ideal for rectification applications, this small outline diode operates at up to 150°C and has a peak repetitive peak reverse voltage of 80 V.

Median Price

$0.053

Lifecycle Status

EOL

Suppliers In-Stock

30

In-Stock Inventory

1k+

Distributors (Authorized)

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Rochester

USA . 51,000 parts In-Stock

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Adafruit Industries

USA . 40 parts In-Stock

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Distrelec

Netherlands . 5,990 parts In-Stock

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$0.481

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$0.481

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Arrow

USA . 24,000 parts In-Stock

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Verical

USA . 24,000 parts In-Stock

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Element14

Singapore . 4,457 parts In-Stock

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$0.140

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$0.071

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$0.055

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Chip1Stop

Japan . 22 parts In-Stock

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Digiode

USA . 309 parts In-Stock

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DF Sales Co.

USA . 36,950 parts In-Stock

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DF Sales Co.

USA . 36,950 parts In-Stock

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Nova Conductors

Japan . 55 parts In-Stock

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Maritex

Poland . 30 parts In-Stock

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$0.062

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$0.056

30

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$0.074

$0.062

$0.056

Bristol Electronics

USA . 11,320 parts In-Stock

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$0.300

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$0.150

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Vyrian

USA . 66,539 parts In-Stock

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IBS Electronics

USA . 60,000 parts In-Stock

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Sensible Micro Corp

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Rutronik

Germany . 9,000 parts In-Stock

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Connector Distribution Corp

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Right Parts Inc.

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Component Sense

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EMSNET

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Contempo Components LLC

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NAC Semi

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Rotakorn

Sweden . 2,794 parts In-Stock

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Prism Electronics

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ComSIT Distribution GmbH

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France . 773 parts In-Stock

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Cyclops Electronics Ltd

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Semicontronic

India . 71,637 parts In-Stock

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Decca Corp

Germany . 71,344 parts In-Stock

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Ampacity Inc.

Singapore . 70,751 parts In-Stock

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Continental Prestige Electronics

USA . 26,496 parts In-Stock

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Corphita

USA . 932 parts In-Stock

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Modulus Dynamics

Lithuania . 25,765 parts In-Stock

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Corohmni

South Africa . 876 parts In-Stock

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Argo Parts USA

USA . 1,917 parts In-Stock

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$0.069

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Netroflash

USA . 2,000 parts In-Stock

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$0.080

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$0.079

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$0.085

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Advanced Electronics

New Zealand . 40 parts In-Stock

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$0.127

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$0.116

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40

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Aztec Data Supply Inc.

USA . 123 parts In-Stock

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Component Stockers USA

USA . 843,829 parts In-Stock

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Microchip USA

USA . 1,534 parts In-Stock

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Andel Nordic

Denmark . 2,106 parts In-Stock

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$25.006

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Perfect Parts

USA . 1,062,762 parts In-Stock

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Eastek

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QUARKTWIN TECHNOLOGY LTD

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Lixinc

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iodParts Technologies Inc.

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Robosynatics

Brazil . 1,000 parts In-Stock

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Authorized Procurement Solutions

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Lucentia Tech

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GreenTree Electronics

Israel . 819 parts In-Stock

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Overview

Enhance your electronic designs with the BAV199E6327HTSA1 diode by Infineon Technologies. Known for their superior quality and reliability, Infineon delivers cutting-edge technology in the realm of Diodes & Rectifiers. This series connected, center tap diode boasts a fast maximum reverse recovery time of 1.5 us and a peak repetitive peak reverse voltage of 80V, making it ideal for applications requiring precise voltage regulation and high efficiency. Trust in Infineon to provide you with the best-in-class components for your next project.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the diodes, ensuring long-term reliability.

Config: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS

Allows for efficient voltage regulation and control in circuit design.

Surface Mount: YES

Allows for easy and compact integration onto circuit boards, saving space.

Maximum Reverse Recovery Time: 1.5 us

Ensures quick response times and efficient operation in fast switching applications.

Package Shape: RECTANGULAR

Facilitates easy handling and mounting onto circuit boards.

No. of Terminals: 3

Provides flexibility in circuit connections and configurations.

Package Style (Meter): SMALL OUTLINE

Suits applications where space is limited and requires compact components.

Maximum Operating Temperature: 150 °C

Ensures stable performance even in high-temperature environments.

Terminal Finish: TIN

Provides good electrical conductivity and corrosion resistance.

Terminal Position: DUAL

Facilitates easy connections in circuit designs.

Maximum Power Dissipation: 0.33 W

Handles power efficiently, reducing the risk of overheating.

Maximum Time At Peak Reflow Temperature (s): 40

Withstands peak reflow temperatures for a specified duration without damage.

Peak Reflow Temperature °C: 260

Supports high-temperature soldering processes without compromising performance.

Diode Type: RECTIFIER DIODE

Designed for converting alternating current to direct current effectively.

Maximum Output Current: 0.2 A

Suitable for low to moderate current applications.

Terminal Form: GULL WING

Allows for easy surface mounting onto circuit boards.

No. of Elements: 2

Provides redundancy and backup in case one element fails.

Maximum Repetitive Peak Reverse Voltage: 80 V

Handles reverse voltage efficiently without breakdown.

Diode Element Material: SILICON

Offers reliable and consistent performance in various operating conditions.

Technical Specifications

Diodes & Rectifiers BAV199E6327HTSA1 attributes and parameters. Explore more Diodes & Rectifiers devices from Infineon Technologies

Specs

Config:

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS

Diode Element Material:

SILICON

Diode Type:

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

2

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Maximum Output Current:

.2 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Maximum Power Dissipation:

.33 W

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

80 V

Maximum Reverse Recovery Time:

1.5 us

Surface Mount:

YES

Terminal Finish:

TIN

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

40

Trade Compliance

BAV199E6327HTSA1 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.70

SB

8541.10.00.70

Manufacturer Highlights

Infineon Technologies

Infineon Technologies AG is a leading global semiconductor manufacturer and provider of comprehensive solutions for automotive, industrial, and consumer applications. Founded in 1999, the company has grown to become one of the largest semiconductor manufacturers in Europe. Infineon is headquartered in Neubiberg, Germany with operations across countries in Europe and Asia Pacific. Infineon provides microelectronics products that address many of today's societal challenges affecting energy efficiency, mobility, security and connectivity. Over the past two decades Infineon has become a major player in the semiconductor industry with an impressive portfolio of innovative technologies. As one of only four companies that produce DRAM chips for automobiles, Infineon produces cutting-edge processors for use in advanced driver assistance systems (ADAS). Likewise, they specialize in providing advanced embedded secure microcontrollers that are essential for connected devices. Furthermore, they offer integrated circuit solutions for industrial power control such as motor controllers and embedded gate drivers.

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Management team

CEO

Jochen Hanebeck

Chief Financial Officer

Sven Schneider

Chief Marketing Officer

Andreas Urschitz

Manufacturer fab locations 19

Fab name Location Fab Initiation Wafer Capacity

Villach 300mm

Fabrication

Fab Initiation

2011

Austria

Villach

Wafer Capacity

11,000

2011

11,000

Kulim 2

Fabrication

Fab Initiation

2016

Malaysia

Kulim

Wafer Capacity

79,500

2016

79,500

Dresden - Module 3

Fabrication

Fab Initiation

1999

Germany

Dresden

Wafer Capacity

58,000

1999

58,000

Villach Building

Fabrication

Fab Initiation

2016

Austria

Villach

Wafer Capacity

2,000

2016

2,000

Regensburg

Fabrication

Fab Initiation

1986

Germany

Regensburg

Wafer Capacity

60,000

1986

60,000

Dresden 200 - Module 1

Fabrication

Fab Initiation

1995

Germany

Dresden

Wafer Capacity

28,000

1995

28,000

Dresden 200 - Module 2

Fabrication

Fab Initiation

1996

Germany

Dresden

Wafer Capacity

28,000

1996

28,000

Building 38

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Building 47

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Kulim 1

Fabrication

Fab Initiation

2006

Malaysia

Kulim

Wafer Capacity

110,000

2006

110,000

Mesa Facility

Fabrication

Fab Initiation

1990

USA

Mesa

Wafer Capacity

3,000

1990

3,000

Villach 150mm

Fabrication

Fab Initiation

1981

Austria

Villach

Wafer Capacity

35,000

1981

35,000

Villach 200mm

Fabrication

Fab Initiation

1995

Austria

Villach

Wafer Capacity

68,000

1995

68,000

Temecula

Fabrication

Fab Initiation

1995

USA

Temecula

Wafer Capacity

30,000

1995

30,000

Villach 300mm

Fabrication

Fab Initiation

2021

Austria

Villach

Wafer Capacity

2021

Villach 150mm

Fabrication

Fab Initiation

2018

Austria

Villach

Wafer Capacity

5,000

2018

5,000

Kulim 3

Fabrication

Fab Initiation

2024

Malaysia

Kulim

Wafer Capacity

2024

Fab 25

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

31,000

1995

31,000

Dresden - Module 4

Fabrication

Fab Initiation

2026

Germany

Dresden

Wafer Capacity

2026

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