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BAT54-02V-E6327

Infineon Technologies

BAT54-02V-E6327 by Infineon Technologies

BAT54-02V-E6327 by Infineon is a Schottky rectifier diode with 0.24V VF, 30V VRRM, and 0.005us reverse recovery time. Ideal for SMT applications, it operates up to 150°C making it suitable for high-temperature environments in various electronic circuits.

Median Price

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Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

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Vyrian

USA . 5,457 parts In-Stock

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VNN

France . 750 parts In-Stock

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750

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Digiode

USA . 744 parts In-Stock

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744

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Nova Conductors

Japan . 300 parts In-Stock

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300

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Ampacity Inc.

Singapore . 614 parts In-Stock

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$0.010

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614

$0.010

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Modulus Dynamics

Lithuania . 6,737 parts In-Stock

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$0.148

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$0.142

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$0.136

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Semicontronic

India . 332 parts In-Stock

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$2.010

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$1.960

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$1.950

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332

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AZTECH Wire

Italy . 341 parts In-Stock

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$7.454

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Microchip USA

USA . 4,721 parts In-Stock

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Argo Parts USA

USA . 714 parts In-Stock

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Bastille Electronics

Australia . 550 parts In-Stock

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Corohmni

South Africa . 105 parts In-Stock

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Continental Prestige Electronics

USA . 85 parts In-Stock

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Corphita

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Overview

Discover the exceptional quality and reliability of the BAT54-02V-E6327 by Infineon Technologies, a leading manufacturer in the industry. As a Schottky rectifier diode, this product offers unparalleled performance and efficiency in various applications. With a maximum reverse recovery time of 0.005 us and a peak reflow temperature of 260°C, customers can trust in the durability and longevity of this diode. Whether used in consumer electronics, automotive systems, or industrial machinery, the BAT54-02V-E6327 delivers value, benefits, and advantages that exceed expectations. Choose excellence with Infineon Technologies.

Feature Benefit Bullets

Config SINGLE:

This single configuration makes it easy to integrate into a variety of electronic devices.

Surface Mount YES:

Ideal for applications where space is limited, as it can be directly mounted on the circuit board.

Maximum Reverse Recovery Time 0.005 us:

With a fast reverse recovery time, this diode ensures efficient and reliable performance.

Maximum Operating Temperature 150 °C:

Operates effectively in high temperature environments, ensuring stability and longevity.

Peak Reflow Temperature °C 260:

Can withstand peak reflow temperatures during assembly processes without compromising performance.

Diode Type RECTIFIER DIODE:

A rectifier diode ensures proper conversion of AC to DC, making it suitable for power supply applications.

Maximum Forward Voltage (VF) 0.24 V:

Low forward voltage drop improves efficiency and minimizes power loss.

Technology SCHOTTKY:

Schottky technology provides fast switching speed and low forward voltage, making it ideal for high-frequency applications.

Maximum Repetitive Peak Reverse Voltage 30 V:

Can withstand high reverse voltages, making it suitable for voltage regulation and rectification.

Maximum Non Repetitive Peak Forward Current 0.6 A:

With a high non-repetitive peak forward current, this diode can handle short-term surges without damage.

Technical Specifications

Diodes & Rectifiers BAT54-02V-E6327 attributes and parameters. Explore more Diodes & Rectifiers devices from Infineon Technologies

Specs

Config:

SINGLE

Diode Type:

Maximum Forward Voltage (VF):

.24 V

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Forward Current:

.6 A

No. of Elements:

1

No. of Phases:

1

Maximum Operating Temperature:

150 Cel

Peak Reflow Temperature (C):

260

Maximum Repetitive Peak Reverse Voltage:

30 V

Maximum Reverse Recovery Time:

.005 us

Sub-Category:

Rectifier Diodes

Surface Mount:

YES

Technology:

SCHOTTKY

Trade Compliance

BAT54-02V-E6327 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Infineon Technologies

Infineon Technologies AG is a leading global semiconductor manufacturer and provider of comprehensive solutions for automotive, industrial, and consumer applications. Founded in 1999, the company has grown to become one of the largest semiconductor manufacturers in Europe. Infineon is headquartered in Neubiberg, Germany with operations across countries in Europe and Asia Pacific. Infineon provides microelectronics products that address many of today's societal challenges affecting energy efficiency, mobility, security and connectivity. Over the past two decades Infineon has become a major player in the semiconductor industry with an impressive portfolio of innovative technologies. As one of only four companies that produce DRAM chips for automobiles, Infineon produces cutting-edge processors for use in advanced driver assistance systems (ADAS). Likewise, they specialize in providing advanced embedded secure microcontrollers that are essential for connected devices. Furthermore, they offer integrated circuit solutions for industrial power control such as motor controllers and embedded gate drivers.

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Management team

CEO

Jochen Hanebeck

Chief Financial Officer

Sven Schneider

Chief Marketing Officer

Andreas Urschitz

Manufacturer fab locations 19

Fab name Location Fab Initiation Wafer Capacity

Villach 300mm

Fabrication

Fab Initiation

2011

Austria

Villach

Wafer Capacity

11,000

2011

11,000

Kulim 2

Fabrication

Fab Initiation

2016

Malaysia

Kulim

Wafer Capacity

79,500

2016

79,500

Dresden - Module 3

Fabrication

Fab Initiation

1999

Germany

Dresden

Wafer Capacity

58,000

1999

58,000

Villach Building

Fabrication

Fab Initiation

2016

Austria

Villach

Wafer Capacity

2,000

2016

2,000

Regensburg

Fabrication

Fab Initiation

1986

Germany

Regensburg

Wafer Capacity

60,000

1986

60,000

Dresden 200 - Module 1

Fabrication

Fab Initiation

1995

Germany

Dresden

Wafer Capacity

28,000

1995

28,000

Dresden 200 - Module 2

Fabrication

Fab Initiation

1996

Germany

Dresden

Wafer Capacity

28,000

1996

28,000

Building 38

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Building 47

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Kulim 1

Fabrication

Fab Initiation

2006

Malaysia

Kulim

Wafer Capacity

110,000

2006

110,000

Mesa Facility

Fabrication

Fab Initiation

1990

USA

Mesa

Wafer Capacity

3,000

1990

3,000

Villach 150mm

Fabrication

Fab Initiation

1981

Austria

Villach

Wafer Capacity

35,000

1981

35,000

Villach 200mm

Fabrication

Fab Initiation

1995

Austria

Villach

Wafer Capacity

68,000

1995

68,000

Temecula

Fabrication

Fab Initiation

1995

USA

Temecula

Wafer Capacity

30,000

1995

30,000

Villach 300mm

Fabrication

Fab Initiation

2021

Austria

Villach

Wafer Capacity

2021

Villach 150mm

Fabrication

Fab Initiation

2018

Austria

Villach

Wafer Capacity

5,000

2018

5,000

Kulim 3

Fabrication

Fab Initiation

2024

Malaysia

Kulim

Wafer Capacity

2024

Fab 25

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

31,000

1995

31,000

Dresden - Module 4

Fabrication

Fab Initiation

2026

Germany

Dresden

Wafer Capacity

2026

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