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BAT165E6327XT

Infineon Technologies

BAT165E6327XT by Infineon Technologies

BAT165E6327XT by Infineon Technologies is a Schottky rectifier diode with a max forward voltage of 0.74V and max output current of 0.75A. It is designed for fast recovery applications and has a max operating temperature of 150°C.

Median Price

$4.583

Lifecycle Status

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7

In-Stock Inventory

1k+

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Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Adafruit Industries

USA . 100 parts In-Stock

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$4.583

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$4.354

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$4.354

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$4.583

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Avnet

USA . 3,000 parts In-Stock

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Digiode

USA . 82 parts In-Stock

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$4.354

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Vyrian

USA . 7,323 parts In-Stock

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Flip Electronics

USA . 4,000 parts In-Stock

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VNN

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Nova Conductors

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Aztec Data Supply Inc.

USA . 3,741 parts In-Stock

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$0.063

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$0.063

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Modulus Dynamics

Lithuania . 2,238 parts In-Stock

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$0.171

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$0.164

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$0.157

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2,238

$0.171

$0.164

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Semicontronic

India . 7,507 parts In-Stock

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$3.900

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$3.802

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$3.783

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Corphita

USA . 563 parts In-Stock

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$4.125

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Ampacity Inc.

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$8.480

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Component Stockers USA

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Argo Parts USA

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Bastille Electronics

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Robosynatics

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Corohmni

South Africa . 62 parts In-Stock

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Overview

Discover the BAT165E6327XT by Infineon Technologies, a high-quality diode that offers numerous advantages for various applications. Manufactured by Infineon Technologies, a trusted leader in semiconductor solutions, this diode is designed to deliver exceptional performance and reliability. Its fast recovery application and Schottky technology ensure efficient energy conversion and low power dissipation. With a maximum reverse current of 50 uA and a maximum output current of 0.75 A, this diode provides excellent functionality. Its small outline package and surface mount feature make it easy to integrate into any design. Trust the BAT165E6327XT to meet your needs with its superior quality and outstanding performance.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This product is made with a plastic/epoxy body material, which provides durability and protection.

Config: SINGLE

The single configuration of this diode ensures simplicity and ease of use.

Surface Mount: YES

With surface mount capability, this diode can be easily mounted onto circuit boards, saving space and enhancing design flexibility.

Maximum Reverse Current: 50 uA

The low maximum reverse current ensures efficient and reliable performance, making this diode suitable for a wide range of applications.

Package Shape: RECTANGULAR

The rectangular package shape allows for easy integration into various electronic systems and designs.

Reverse Test Voltage: 40 V

This diode has a high reverse test voltage, making it suitable for applications where voltage reversal protection is essential.

No. of Terminals: 2

With just two terminals, this diode is easy to connect and install.

Package Style (Meter): SMALL OUTLINE

The small outline package style enhances space-saving and enables efficient usage in compact electronic devices.

Application: FAST RECOVERY

The fast recovery property of this diode ensures quick response times, making it ideal for applications requiring rapid signal rectification or voltage clamping.

Maximum Operating Temperature: 150 °C

This diode can withstand high operating temperatures, ensuring reliable performance in demanding environments.

Terminal Finish: TIN

The tin terminal finish provides corrosion resistance and excellent solderability for convenient installation.

Terminal Position: DUAL

This diode has dual terminal positions, allowing for flexible circuit board layouts.

Maximum Power Dissipation: 0.6 W

The high maximum power dissipation capability ensures this diode can handle substantial power loads effectively.

Maximum Time At Peak Reflow Temperature (s): 40

This diode can withstand peak reflow temperatures for up to 40 seconds, ensuring durability during soldering processes.

Peak Reflow Temperature °C: 260

The high peak reflow temperature tolerance makes this diode suitable for various soldering techniques and processes.

Reference Standard: AEC-Q101

This diode meets the AEC-Q101 automotive industry standard, guaranteeing its reliability and suitability for automotive applications.

Diode Type: RECTIFIER DIODE

This diode is a rectifier diode, which enables the conversion of alternating current (AC) to direct current (DC) in electronic circuits.

Maximum Forward Voltage (VF): 0.74 V

With a low maximum forward voltage, this diode exhibits low voltage drops, minimizing power consumption and optimizing energy efficiency.

Maximum Output Current: 0.75 A

The high maximum output current rating allows this diode to handle substantial current flows efficiently.

Technology: SCHOTTKY

This diode utilizes Schottky technology, providing low forward voltage drop, high switching speeds, and excellent temperature stability.

Terminal Form: GULL WING

The gull wing terminal form ensures secure connections and ease of soldering during installation.

No. of Elements: 1

With one diode element, this product simplifies circuit design and reduces complexity in electronic systems.

Maximum Repetitive Peak Reverse Voltage: 40 V

This diode can handle repetitive peak reverse voltages of up to 40 volts, ensuring reliable performance in various applications.

Moisture Sensitivity Level (MSL): 1

The moisture sensitivity level 1 indicates that this diode has a low susceptibility to moisture-related failure, ensuring long-term reliability.

No. of Phases: 1

With one phase, this diode is suitable for single-phase applications, simplifying system designs.

Maximum Non Repetitive Peak Forward Current: 2.5 A

The high maximum non-repetitive peak forward current rating allows this diode to handle short-term high current surges effectively.

Diode Element Material: SILICON

The silicon diode element material offers high efficiency, low power loss, and excellent temperature stability for optimal performance.

Technical Specifications

Diodes & Rectifiers BAT165E6327XT attributes and parameters. Explore more Diodes & Rectifiers devices from Infineon Technologies

Specs

Additional Features:

TR, 7 INCH: 3000

Application:

FAST RECOVERY

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

.74 V

JESD-30 Code:

R-PDSO-G2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Forward Current:

2.5 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Maximum Output Current:

.75 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Maximum Power Dissipation:

.6 W

Reference Standard:

AEC-Q101

Maximum Repetitive Peak Reverse Voltage:

40 V

Maximum Reverse Current:

50 uA

Reverse Test Voltage:

40 V

Surface Mount:

YES

Technology:

SCHOTTKY

Terminal Finish:

TIN

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

40

Trade Compliance

BAT165E6327XT Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

Manufacturer Highlights

Infineon Technologies

Infineon Technologies AG is a leading global semiconductor manufacturer and provider of comprehensive solutions for automotive, industrial, and consumer applications. Founded in 1999, the company has grown to become one of the largest semiconductor manufacturers in Europe. Infineon is headquartered in Neubiberg, Germany with operations across countries in Europe and Asia Pacific. Infineon provides microelectronics products that address many of today's societal challenges affecting energy efficiency, mobility, security and connectivity. Over the past two decades Infineon has become a major player in the semiconductor industry with an impressive portfolio of innovative technologies. As one of only four companies that produce DRAM chips for automobiles, Infineon produces cutting-edge processors for use in advanced driver assistance systems (ADAS). Likewise, they specialize in providing advanced embedded secure microcontrollers that are essential for connected devices. Furthermore, they offer integrated circuit solutions for industrial power control such as motor controllers and embedded gate drivers.

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Management team

CEO

Jochen Hanebeck

Chief Financial Officer

Sven Schneider

Chief Marketing Officer

Andreas Urschitz

Manufacturer fab locations 19

Fab name Location Fab Initiation Wafer Capacity

Villach 300mm

Fabrication

Fab Initiation

2011

Austria

Villach

Wafer Capacity

11,000

2011

11,000

Kulim 2

Fabrication

Fab Initiation

2016

Malaysia

Kulim

Wafer Capacity

79,500

2016

79,500

Dresden - Module 3

Fabrication

Fab Initiation

1999

Germany

Dresden

Wafer Capacity

58,000

1999

58,000

Villach Building

Fabrication

Fab Initiation

2016

Austria

Villach

Wafer Capacity

2,000

2016

2,000

Regensburg

Fabrication

Fab Initiation

1986

Germany

Regensburg

Wafer Capacity

60,000

1986

60,000

Dresden 200 - Module 1

Fabrication

Fab Initiation

1995

Germany

Dresden

Wafer Capacity

28,000

1995

28,000

Dresden 200 - Module 2

Fabrication

Fab Initiation

1996

Germany

Dresden

Wafer Capacity

28,000

1996

28,000

Building 38

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Building 47

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Kulim 1

Fabrication

Fab Initiation

2006

Malaysia

Kulim

Wafer Capacity

110,000

2006

110,000

Mesa Facility

Fabrication

Fab Initiation

1990

USA

Mesa

Wafer Capacity

3,000

1990

3,000

Villach 150mm

Fabrication

Fab Initiation

1981

Austria

Villach

Wafer Capacity

35,000

1981

35,000

Villach 200mm

Fabrication

Fab Initiation

1995

Austria

Villach

Wafer Capacity

68,000

1995

68,000

Temecula

Fabrication

Fab Initiation

1995

USA

Temecula

Wafer Capacity

30,000

1995

30,000

Villach 300mm

Fabrication

Fab Initiation

2021

Austria

Villach

Wafer Capacity

2021

Villach 150mm

Fabrication

Fab Initiation

2018

Austria

Villach

Wafer Capacity

5,000

2018

5,000

Kulim 3

Fabrication

Fab Initiation

2024

Malaysia

Kulim

Wafer Capacity

2024

Fab 25

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

31,000

1995

31,000

Dresden - Module 4

Fabrication

Fab Initiation

2026

Germany

Dresden

Wafer Capacity

2026

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