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2SJ529(S)-(1)

Hitachi

2SJ529(S)-(1) by Hitachi

P-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 20 W; No. of Elements: 1; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;

Median Price

-

Lifecycle Status

Suppliers In-Stock

0

In-Stock Inventory

< 1k

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Native Components

USA . 244 parts In-Stock

1+ parts

$5.475

100+ parts

-

1k+ parts

-

10k+ parts

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244

$5.475

-

-

-

Northwest PG Solutions

USA . 419 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$5.365

10k+ parts

-

419

-

-

$5.365

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Technical Specifications

Other Function Transistors 2SJ529(S)-(1) attributes and parameters. Explore more Other Function Transistors devices from Hitachi

Specs

Configuration:

Maximum Drain Current (Abs) (ID):

10 A

Maximum Drain Current (ID):

10 A

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

No. of Elements:

1

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Sub-Category:

Other Transistors

Surface Mount:

YES

Trade Compliance

2SJ529(S)-(1) Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

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