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KBP10M

General Semiconductor

KBP10M by General Semiconductor

BRIDGE RECTIFIER DIODE; Terminal Position: SINGLE; Terminal Form: WIRE; No. of Terminals: 4; Surface Mount: NO; Package Shape: RECTANGULAR;

Median Price

$0.262

Lifecycle Status

Suppliers In-Stock

8

In-Stock Inventory

1k+

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Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 404 parts In-Stock

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$0.262

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$0.246

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$0.222

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$0.222

404

$0.262

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$0.222

Distributors (In-Stock)

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Digiode

USA . 519 parts In-Stock

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$0.249

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519

$0.249

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Vyrian

USA . 74,422 parts In-Stock

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$0.262

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Cyclops Electronics Ltd

UK . 1,336 parts In-Stock

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Bristol Electronics

USA . 1,007 parts In-Stock

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R&J Components

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First Choice Components Inc.

USA . 59 parts In-Stock

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PUI

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Corphita

USA . 93 parts In-Stock

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$0.236

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Metaverse IC Inc.

Canada . 36,530 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

USA . 27,464 parts In-Stock

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Authorized Procurement Solutions

USA . 4,000 parts In-Stock

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Supply Digital

USA . 1,339 parts In-Stock

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Perfect Parts

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Technical Specifications

Bridge Rectifier Diodes KBP10M attributes and parameters. Explore more Bridge Rectifier Diodes devices from General Semiconductor

Specs

Minimum Breakdown Voltage:

1000 V

Config:

BRIDGE, 4 ELEMENTS

Diode Element Material:

SILICON

Maximum Forward Voltage (VF):

1 V

JESD-30 Code:

R-PSIP-W4

JESD-609 Code:

e0

Maximum Non Repetitive Peak Forward Current:

50 A

No. of Elements:

4

No. of Phases:

1

No. of Terminals:

4

Maximum Operating Temperature:

150 Cel

Maximum Output Current:

1.5 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

IN-LINE

Qualification:

Not Qualified

Reference Standard:

UL RECOGNIZED

Maximum Repetitive Peak Reverse Voltage:

1000 V

Sub-Category:

Bridge Rectifier Diodes

Surface Mount:

NO

Terminal Finish:

Tin/Lead (Sn/Pb)

Terminal Form:

Terminal Position:

Trade Compliance

KBP10M Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

NSN

5961-01-313-6122, 5961013136122

NIIN

013136122

Manufacturer Highlights

General Semiconductor

Vishay General Semiconductor traces its origins to the founding of the Semiconductor Components Division of General Instrument, in Hicksville, New York in 1960. In 1997, the power semiconductor business of General Instrument became an independent, publicly traded company, General Semiconductor. The same year, General Semiconductor acquired the small signal diode business of ITT Industries. Inc. With the acquisition of General Semiconductor in 2001, Vishay Intertechnology joined the top ranks of discrete semiconductor manufacturers and became a market and technology leader in power rectifiers and TVS avalanche breakdown diodes. Today, Vishay General Semiconductor serves a very wide range of customers with devices that can be used as rectifiers, signal limiters, voltage regulators, switches, signal modulators, signal mixers, signal demodulators, and oscillators. Vishay General Semiconductor customers include leading manufacturers of consumer electronics, lighting, telecommunications equipment, computers, and automotive products.

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