Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
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N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2 W; Terminal Form: GULL WING; No. of Terminals: 8;
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Small Signal Field Effect Transistors (FET) FDS6990AS attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Fairchild Semiconductor
Configuration:
Minimum DS Breakdown Voltage:
Maximum Drain Current (Abs) (ID):
Maximum Drain Current (ID):
Maximum Drain-Source On Resistance:
Field Effect Transistor Technology:
JESD-30 Code:
JESD-609 Code:
Moisture Sensitivity Level (MSL):
No. of Elements:
No. of Terminals:
Operating Mode:
Maximum Operating Temperature:
Package Body Material:
Package Shape:
Package Style (Meter):
Peak Reflow Temperature (C):
Polarity or Channel Type:
Maximum Power Dissipation (Abs):
Qualification:
Sub-Category:
Surface Mount:
Terminal Finish:
Terminal Form:
Terminal Position:
Maximum Time At Peak Reflow Temperature (s):
Transistor Application:
Transistor Element Material:
FDS6990AS Transistors trade compliance attributes, and parameters.
ECCN
EAR99
ECCN Governance
EAR
HTS
8541.29.00.95
SB
8541.29.00.80
In 2016 Fairchild was acquired by ON Semiconductor (after 2022, onsemi). Fairchild Semiconductor International, Inc. was an American semiconductor company based in San Jose, California. Founded in 1957 as a division of Fairchild Camera and Instrument, it became a pioneer in the manufacturing of transistors and of integrated circuits. Schlumberger bought the firm in 1979 and sold it to National Semiconductor in 1987; Fairchild was spun off as an independent company again in 1997. In September 2016, Fairchild was acquired by ON Semiconductor. The company had locations in the United States at San Jose, California; San Rafael, California; South Portland, Maine; West Jordan, Utah; and Mountaintop, Pennsylvania. Outside the US it operated locations in Australia;[4] Singapore; Bucheon, South Korea; Penang, Malaysia; Suzhou, China; and Cebu, Philippines, among others.
1N4148WS
Promax-johnton
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
LM317TG
Texas Instruments
LM317TG by Texas Instruments is an adjustable positive single output standard regulator with a max output voltage of 37V and max output current of 1.5A. It operates in temperatures ranging from 0 to 125°C, making it suitable for various applications requiring precise voltage regulation in electronic circuits. The package style is flange mount, with a rectangular shape and through-hole terminals for easy installation.
LL4148
Weitronic Enterprise
RECTIFIER DIODE; Terminal Position: END; Terminal Form: WRAP AROUND; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;
SMBJ18CA
Microsemi
TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
LM358N
Silicon Group
OPERATIONAL AMPLIFIER; Temperature Grade: COMMERCIAL; Terminal Form: THROUGH-HOLE; No. of Terminals: 8; Package Code: DIP; Package Shape: RECTANGULAR;
Goodwork Semiconductor
Lite-on Semiconductor
BAV99
Jgd Semiconductors
RECTIFIER DIODE; Surface Mount: YES; Maximum Reverse Recovery Time: .006 us; Maximum Repetitive Peak Reverse Voltage: 70 V; Maximum Forward Voltage (VF): 1 V; Maximum Operating Temperature: 150 Cel;
M39029/58-360
Molex
CONNECTOR ACCESSORY; Alternate Contact Sources: MILITARY; Removal Tool Sources: MILITARY; Material: COPPER ALLOY; National Stock Number (NSN): 5999004733551; Mating Contacts: M39029/56-348, M39029/57-354;
RC0402FR-071KL
Yageo
The Yageo RC0402FR-071KL is a fixed resistor with a resistance of 1000 ohm and a tolerance of 1%. It is suitable for surface mount applications and has a max operating temperature of 155 °C.
Diodes Incorporated
M24308/2-1F
Positronic Industries
D SUBMINIATURE CONNECTOR; Option: GENERAL PURPOSE; Contact Gender: FEMALE; Mating Info.: MULTIPLE MATING PARTS AVAILABLE; Additional Features: STANDARD: MIL-DTL-24308, POLARIZED; Body or Shell Style: RECEPTACLE;
1N4148
Philips Components
RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;
M39029/56-351
Defense Logistics Agency
CONNECTOR ACCESSORY; MIL Conformity: YES; Contact Gender: FEMALE; Mating Contacts: M39029/58-363; Removal Tool Sources: MILITARY; Alternate Contact Sources: MILITARY;
Transys Electronics
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;
AMS1117-3.3
Advanced Monolithic Systems
AMS1117-3.3 by Advanced Monolithic Systems is a fixed positive single output LDO regulator with 1A max output current, 3% voltage tolerance, and 1.3V dropout voltage. Ideal for applications requiring stable 3.3V supply in compact designs due to its small outline package and excellent load regulation of 0.025%.
2N2222A
Semitronics
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;
Shanghai Lunsure Electronic Technology
RECTIFIER DIODE; Surface Mount: YES; Maximum Forward Voltage (VF): 1 V; Maximum Non Repetitive Peak Forward Current: .5 A; No. of Elements: 1; Maximum Reverse Recovery Time: .004 us;
2N7002
Inter F E T
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Maximum Drain-Source On Resistance: 7.5 ohm; Maximum Drain Current (Abs) (ID): .115 A;
NXP Semiconductors
BSS138BKW,115
Nexperia
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Terminal Finish: TIN; No. of Terminals: 3; Additional Features: LOGIC LEVEL COMPATIBLE;
FDY300NZ
Fairchild Semiconductor
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .625 W; Terminal Position: DUAL; JESD-609 Code: e3;
FDS4935BZ
P-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.6 W; Terminal Finish: MATTE TIN; Transistor Element Material: SILICON;
FDMC8030
Onsemi
FDMC8030 by Onsemi is a N-CHANNEL FET for SWITCHING applications. It features 40V DS Breakdown Voltage, 50A Max Pulsed Drain Current, and 21mJ Avalanche Energy Rating. With a SQUARE package shape and NO LEAD terminals, it operates in ENHANCEMENT MODE with a max power dissipation of 14W at 150°C.
2N7002-TP
Micro Commercial Components
2N7002-TP by Micro Commercial Components is a N-channel FET with 60V breakdown voltage and 7.5 ohm on-resistance, ideal for switching applications. Operating in enhancement mode, it has a max drain current of 0.34A and peak reflow temperature of 260°C. This small outline transistor features a gull wing terminal form and metal-oxide semiconductor technology.
MMBFJ177LT1G
MMBFJ177LT1G by Onsemi is a P-CHANNEL FET in PLASTIC/EPOXY package. It operates in DEPLETION MODE with 300 ohm RDS(on) and 5.5 pF Crss, ideal for CHOPPER applications. This SMALL OUTLINE transistor has a max temp of 150°C, making it suitable for various electronic devices.
NDS9407
National Semiconductor
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.5 W; No. of Elements: 1; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
PMV65XPEAR
PMV65XPEAR by Nexperia is a P-CHANNEL FET with 20V DS Breakdown Voltage and 2.8A ID. Ideal for SWITCHING applications, it features SINGLE configuration with BUILT-IN DIODE in a PLASTIC/EPOXY package. AEC-Q101 & IEC-60134 compliant, it operates in ENHANCEMENT MODE with 0.078 ohm RDS(on).
2N7000
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): .4 W; Qualification: Not Qualified; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
2N7000G
Rochester Electronics
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Operating Mode: ENHANCEMENT MODE; Maximum Drain-Source On Resistance: 5 ohm; JESD-30 Code: O-PBCY-W3;
FDV301N_NL
FDV301N_NL by Fairchild Semiconductor is a N-CHANNEL FET with 25V DS Breakdown Voltage, 0.22A Drain Current, and 5 ohm On Resistance. Ideal for SWITCHING applications, it operates in ENHANCEMENT MODE at temperatures ranging from -55 to 150°C. This PLASTIC/EPOXY transistor comes in a GULL WING package style suitable for surface mount assembly.
FDN360P_NL
Fairchild Semiconductor's FDN360P_NL is a P-CHANNEL FET with 30V DS Breakdown Voltage, ideal for SWITCHING applications. It features a max ID of 2A, 0.08 ohm RDS(on), and operates in ENHANCEMENT MODE. The transistor comes in a PLASTIC/EPOXY package with GULL WING terminals and can handle up to 150°C operating temperature.
FDS6679AZ
FDS6679AZ by Onsemi is a P-CHANNEL FET with 30V DS Breakdown Voltage, ideal for SWITCHING applications. It features 13A Drain Current, 0.0093 ohm On Resistance, and 745pF Feedback Capacitance. With ENHANCEMENT MODE operation and GULL WING terminals, it offers reliable performance in various electronic circuits.
ZVP3310FTA
Zetex Plc
P-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Package Body Material: PLASTIC/EPOXY; JESD-30 Code: R-PDSO-G3; No. of Terminals: 3;
BSS84
Continental Device India
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .25 W; JEDEC-95 Code: TO-236AB; Terminal Finish: MATTE TIN;
NDC7002N
N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .96 W; Package Body Material: PLASTIC/EPOXY; Operating Mode: ENHANCEMENT MODE;
IRF9310TRPBF-1
International Rectifier
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Minimum DS Breakdown Voltage: 30 V; Package Style (Meter): SMALL OUTLINE; JESD-30 Code: R-PDSO-G8;
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Maximum Time At Peak Reflow Temperature (s): 30; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
FDS9435A
The Onsemi FDS9435A is a P-CHANNEL FET with 30V DS Breakdown Voltage, ideal for SWITCHING applications. It features 5.3A Drain Current, 0.05 ohm On Resistance, and operates in ENHANCEMENT MODE. With a max power dissipation of 2.5W and operating temperature range from -55 to 175 °C, it is suitable for various electronic designs requiring high performance in a small outline package.
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FDS6681Z
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.5 W; Package Body Material: PLASTIC/EPOXY; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
FDS6681Z by Onsemi is a P-CHANNEL FET with 30V DS Breakdown Voltage, ideal for SWITCHING applications. It features a single configuration with built-in diode, GULL WING terminals, and 20A max Drain Current. Operating in ENHANCEMENT MODE, it has a max Power Dissipation of 2.5W and 0.0046 ohm Drain-Source On Resistance.
FDS6912A
N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2 W; Package Style (Meter): SMALL OUTLINE; Maximum Drain-Source On Resistance: .028 ohm;
N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2 W; Moisture Sensitivity Level (MSL): 1; Transistor Application: SWITCHING;
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.5 W; Terminal Position: DUAL; JESD-609 Code: e3;
FDS6675BZ
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.5 W; Package Shape: RECTANGULAR; Minimum DS Breakdown Voltage: 30 V;
FDS6680AS_NL
FDS6680AS_NL by Fairchild Semiconductor is a N-CHANNEL FET for SWITCHING applications. It has a 30V DS Breakdown Voltage, 11.5A Drain Current, and 0.01 ohm On Resistance. With ENHANCEMENT MODE operation and GULL WING terminals, it offers reliable performance in various electronic circuits.
FDS6680AS
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.5 W; Package Shape: RECTANGULAR; Maximum Operating Temperature: 150 Cel;
FDS6680AS by Onsemi is a N-CHANNEL FET with 30V DS Breakdown Voltage, ideal for SWITCHING applications. It features 11.5A Drain Current, 0.01 ohm On Resistance, and operates in ENHANCEMENT MODE. With a max power dissipation of 2.5W and operating temperature range from -55 to 150 °C, it is suitable for various electronic designs.
FDS6690A
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.5 W; Maximum Drain Current (ID): 11 A; Maximum Drain-Source On Resistance: .0125 ohm;
FDS6910
N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.6 W; JESD-609 Code: e3; Maximum Time At Peak Reflow Temperature (s): 30;
FDS6630A
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.5 W; Maximum Drain-Source On Resistance: .038 ohm; Transistor Element Material: SILICON;
FDS6630A by Onsemi is a N-CHANNEL FET with 30V DS Breakdown Voltage and 6.5A Drain Current. Ideal for SWITCHING applications, it features a SINGLE configuration with BUILT-IN DIODE in a PLASTIC/EPOXY package. Operating in ENHANCEMENT MODE, it has a max power dissipation of 2.5W at 150°C.
FDS6680A_NL
FDS6680A_NL by Fairchild Semiconductor is a N-CHANNEL FET with 30V DS Breakdown Voltage, ideal for SWITCHING applications. It features 12.5A Drain Current, 0.0095 ohm On Resistance, and operates in ENHANCEMENT MODE. With GULL WING terminals and PLASTIC/EPOXY body, it's designed for surface mount installation in various electronic devices.
FDS6575
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.5 W; JESD-30 Code: R-PDSO-G8; No. of Terminals: 8;
FDS6575 by Onsemi is a P-CHANNEL FET with 20V DS Breakdown Voltage and 10A Drain Current. Ideal for SWITCHING applications, it features SINGLE configuration with BUILT-IN DIODE in a PLASTIC/EPOXY package. Operating at up to 175°C, it offers 0.013 ohm Drain-Source On Resistance.
FDS6990AS
FDS6990AS by Onsemi is a N-CHANNEL FET with 2 elements and built-in diode, ideal for SWITCHING applications. It features a Max Drain Current of 7.5A, Max Power Dissipation of 2W, and Max Operating Temperature of 150°C. This small outline transistor has a rectangular package and operates in ENHANCEMENT MODE.
FDS6930B
N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2 W; Maximum Feedback Capacitance (Crss): 60 pF; Maximum Drain Current (Abs) (ID): 5.5 A;
FDS6990AS62Z
N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Package Body Material: PLASTIC/EPOXY; Minimum DS Breakdown Voltage: 30 V; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
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