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FCD600N60Z

Fairchild Semiconductor

FCD600N60Z by Fairchild Semiconductor

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 89 W; JESD-609 Code: e3; No. of Elements: 1;

Median Price

$1.320

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Arrow

USA . 1,070 parts In-Stock

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Chip1Stop

Japan . 1,500 parts In-Stock

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Mouser Electronics

USA . 4,754 parts In-Stock

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DigiKey

USA . 15,255 parts In-Stock

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$2.740

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$0.811

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Rochester

USA . 19,300 parts In-Stock

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Element14

Singapore . 4,015 parts In-Stock

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Verical

USA . 1,070 parts In-Stock

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Digiode

USA . 1,424 parts In-Stock

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Nova Conductors

Japan . 50 parts In-Stock

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Vyrian

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Flip Electronics

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ACDS - Activité Composants Distribution Service

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Singapore . 7,243 parts In-Stock

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Semicontronic

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Corphita

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Corohmni

South Africa . 236 parts In-Stock

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Argo Parts USA

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Netroflash

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Continental Prestige Electronics

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Aztec Data Supply Inc.

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Microchip USA

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RC Electronics

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Perfect Parts

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Lixinc

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Kulean Microsystems

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Infinite Electronics LLP (Excess)

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Alle Elektronik GmbH

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Robosynatics

Brazil . 722 parts In-Stock

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Lucentia Tech

USA . 722 parts In-Stock

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Cyclops Electronics Ltd (Excess)

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Problanco Electronics

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Technical Specifications

Power Field Effect Transistors (FET) FCD600N60Z attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from Fairchild Semiconductor

Specs

Avalanche Energy Rating (EAS):

135 mJ

Case Connection:

DRAIN

Minimum DS Breakdown Voltage:

600 V

Maximum Drain Current (Abs) (ID):

7.4 A

Maximum Drain Current (ID):

7.4 A

Maximum Drain-Source On Resistance:

.6 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JEDEC-95 Code:

TO-252AA

JESD-30 Code:

R-PSSO-G2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

2

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Maximum Pulsed Drain Current (IDM):

22.2 A

Sub-Category:

FET General Purpose Power

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

FCD600N60Z Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.29.00.95

SB

8541.29.00.80

Manufacturer Highlights

Fairchild Semiconductor

In 2016 Fairchild was acquired by ON Semiconductor (after 2022, onsemi). Fairchild Semiconductor International, Inc. was an American semiconductor company based in San Jose, California. Founded in 1957 as a division of Fairchild Camera and Instrument, it became a pioneer in the manufacturing of transistors and of integrated circuits. Schlumberger bought the firm in 1979 and sold it to National Semiconductor in 1987; Fairchild was spun off as an independent company again in 1997. In September 2016, Fairchild was acquired by ON Semiconductor. The company had locations in the United States at San Jose, California; San Rafael, California; South Portland, Maine; West Jordan, Utah; and Mountaintop, Pennsylvania. Outside the US it operated locations in Australia;[4] Singapore; Bucheon, South Korea; Penang, Malaysia; Suzhou, China; and Cebu, Philippines, among others.

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