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ESD03B3Z

Diotec Semiconductor Ag

ESD03B3Z by Diotec Semiconductor Ag

TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: BOTTOM; Terminal Form: NO LEAD; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

Median Price

-

Lifecycle Status

Suppliers In-Stock

0

In-Stock Inventory

< 1k

Technical Specifications

Transient Suppression Devices ESD03B3Z attributes and parameters. Explore more Transient Suppression Devices devices from Diotec Semiconductor Ag

Specs

Additional Features:

LOW CAPACITANCE

Maximum Breakdown Voltage:

5.5 V

Minimum Breakdown Voltage:

3.7 V

Nominal Breakdown Voltage:

4.6 V

Maximum Clamping Voltage:

9.5 V

Config:

SINGLE

Diode Element Material:

SILICON

JESD-30 Code:

R-PBCC-N2

Maximum Non Repetitive Peak Reverse Power Dissipation:

170 W

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-50 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

CHIP CARRIER

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity:

BIDIRECTIONAL

Maximum Repetitive Peak Reverse Voltage:

3.3 V

Maximum Reverse Current:

.5 uA

Reverse Test Voltage:

3.3 V

Surface Mount:

YES

Technology:

AVALANCHE

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Trade Compliance

ESD03B3Z Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

Manufacturer Highlights

Diotec Semiconductor Ag

Discrete semiconductors have always been essential components of electronic devices. Rectifiers in power supplies, transistors for switching and signal processing or protective elements in various circuits: Modern electronics cannot work without these parts. Since 50 years, Diotec has been active in this highly competitive market. Know how, innovations and customer service are the basis of our success.

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