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ZXRE330AV-A

Diodes Incorporated

ZXRE330AV-A by Diodes Incorporated

ZXRE330AV-A by Diodes Inc. is a 3-terminal voltage reference with output voltage of 3.2835-3.3165V, temp coef of 150 ppm/°C, and operating range -40 to 85 °C. Ideal for industrial applications requiring precise voltage regulation in a cylindrical package style.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 6,857 parts In-Stock

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Nova Conductors

Japan . 52 parts In-Stock

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Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corohmni

South Africa . 530 parts In-Stock

1+ parts

$2.039

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530

$2.039

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Ampacity Inc.

Singapore . 961 parts In-Stock

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$2.500

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961

$2.500

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Modulus Dynamics

Lithuania . 634 parts In-Stock

1+ parts

$19.690

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$19.690

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$19.690

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634

$19.690

$19.690

$19.690

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AZTECH Wire

Italy . 594 parts In-Stock

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$21.070

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594

$21.070

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Argo Parts USA

USA . 4,353 parts In-Stock

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Continental Prestige Electronics

USA . 2,325 parts In-Stock

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Perfect Parts

USA . 2,240 parts In-Stock

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Microchip USA

USA . 507 parts In-Stock

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507

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Aranea Global

USA . 500 parts In-Stock

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500

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Overview

Unlock the potential of your electronic devices with the ZXRE330AV-A from Diodes Incorporated. Crafted with precision and expertise, this voltage reference is designed to deliver consistent and reliable performance in a wide range of applications. Whether you're working on industrial equipment or consumer electronics, this product offers unmatched value, benefits, and advantages. Trust Diodes Incorporated to provide you with high-quality components that will take your projects to the next level.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the internal components of the voltage reference, ensuring a long lifespan.

Package Shape: ROUND

Facilitates easy integration into electronic circuit designs, making the voltage reference versatile for various applications.

No. of Terminals: 3

Allows for stable and secure connection within a circuit, reducing the risk of signal interference or loss.

Maximum Operating Temperature: 85 °C

Ensures reliable performance even in higher temperature environments, making it suitable for industrial applications.

Minimum Output Voltage: 3.2835 V

Offers a precise and consistent output voltage, essential for accurate measurements and circuit operations.

Terminal Finish: MATTE TIN

Enhances conductivity and corrosion resistance, maintaining signal integrity and longevity of the voltage reference.

Other IC type: TWO TERMINAL VOLTAGE REFERENCE

Simplifies circuit design and integration, providing a more straightforward solution for voltage reference requirements.

Max Voltage Temp Coef: 150 ppm/°C

Ensures minimal output voltage variation with temperature changes, improving the stability and accuracy of the voltage reference.

Nominal Output Voltage: 3.3 V

Provides a standard reference voltage level commonly used in electronic circuits, making it compatible with a wide range of applications.

Technical Specifications

Voltage References ZXRE330AV-A attributes and parameters. Explore more Voltage References devices from Diodes Incorporated

Specs

JESD-30 Code:

O-PBCY-W3

JESD-609 Code:

e3

No. of Functions:

1

No. of Outputs:

1

No. of Terminals:

3

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Maximum Output Voltage:

3.3165 V

Minimum Output Voltage:

3.2835 V

Nominal Output Voltage:

3.3 V

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

CYLINDRICAL

Peak Reflow Temperature (C):

260

Surface Mount:

NO

Max Voltage Temp Coef:

150 ppm/Cel

Temperature Grade:

Terminal Finish:

MATTE TIN

Terminal Form:

WIRE

Terminal Position:

BOTTOM

Maximum Time At Peak Reflow Temperature (s):

30

Trim or Adjustable Output (V):

NO

Trade Compliance

ZXRE330AV-A Other Function Semiconductors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

PCN

Manufacturer Highlights

Diodes Incorporated

Diodes Incorporated is an international leader in the design and production of high-grade application specific standard products utilized in a wide variety of industries. The company has developed cutting-edge technology that enhances the performance and reliability of components for consumer, industrial, automotive and communication applications. Established in 1959, Diodes Incorporated has been providing superior services to its customers by creating innovative solutions from their world-class manufacturing centers located around the world. Their commitment to delivering quality products extends to their selection of materials which are carefully chosen to meet the demand of both commercial and military requirements.

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Management team

Chairman and CEO

Keh-Shew Lu 

CFO

Brett R. Whitmire 

Lead Director

Angie Chen Button

Manufacturer fab locations 11

Fab name Location Fab Initiation Wafer Capacity

Fab 1

Fabrication

Fab Initiation

1987

China

Shanghai

Wafer Capacity

40,000

1987

40,000

Zizhu Fab 1

Fabrication

Fab Initiation

2013

China

Shanghai

Wafer Capacity

18,500

2013

18,500

G Fab

Fabrication

Fab Initiation

2008

UK

Greenock

Wafer Capacity

8,000

2008

8,000

Keelung Fab

Fabrication

Fab Initiation

1990

Taiwan

Keelung

Wafer Capacity

58,000

1990

58,000

Wuxi Fab

Fabrication

Fab Initiation

2004

China

Wuxi

Wafer Capacity

190,000

2004

190,000

Shanghai Fab

Fabrication

Fab Initiation

1993

China

Shanghai

Wafer Capacity

110,000

1993

110,000

G Fab

Fabrication

Fab Initiation

1970

UK

Greenock

Wafer Capacity

22,000

1970

22,000

Hsinchu Fab

Fabrication

Fab Initiation

1998

Taiwan

Hsinchu

Wafer Capacity

38,000

1998

38,000

Fab 2

Fabrication

Fab Initiation

2003

China

Shanghai

Wafer Capacity

20,000

2003

20,000

SPFAB

Fabrication

Fab Initiation

1995

USA

South Portland

Wafer Capacity

17,000

1995

17,000

N/A

Fabrication

Fab Initiation

1982

UK

Oldham

Wafer Capacity

4,000

1982

4,000

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