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ZM4738A-13

Diodes Incorporated

ZM4738A-13 by Diodes Incorporated

ZM4738A-13 by Diodes Inc. is a Zener diode with 8.2V nominal reference voltage, 31mA test current, and 4.5 ohm dynamic impedance. It's used in applications requiring precise voltage regulation like power supplies and voltage references due to its unidirectional polarity and isolated case connection.

Median Price

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Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

LIBRA Elektronik GmbH

Germany . 9,520 parts In-Stock

1+ parts

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9,520

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Vyrian

USA . 8,533 parts In-Stock

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8,533

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EPE Components Inc.

USA . 4,680 parts In-Stock

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4,680

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Bristol Electronics

USA . 4,680 parts In-Stock

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4,680

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Nova Conductors

Japan . 550 parts In-Stock

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550

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EMSNET

USA . 500 parts In-Stock

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500

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Distributors (Availability)

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Semicontronic

India . 1,478 parts In-Stock

1+ parts

$0.010

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$0.010

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$0.010

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1,478

$0.010

$0.010

$0.010

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Ampacity Inc.

Singapore . 1,151 parts In-Stock

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$2.010

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1,151

$2.010

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AZTECH Wire

Italy . 325 parts In-Stock

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$18.724

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325

$18.724

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Component Stockers USA

USA . 301 parts In-Stock

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$99.990

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301

$99.990

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QUARKTWIN TECHNOLOGY LTD

USA . 29,615 parts In-Stock

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29,615

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Continental Prestige Electronics

USA . 6,175 parts In-Stock

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6,175

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Argo Parts USA

USA . 2,268 parts In-Stock

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2,268

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Bastille Electronics

Australia . 450 parts In-Stock

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450

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Overview

Elevate your electronic projects with the ZM4738A-13 Zener Diode by Diodes Incorporated. Crafted with precision and quality, this single-configured diode offers a wide range of applications in voltage regulation, surge suppression, and signal clipping. With a maximum voltage tolerance of 5% and a nominal reference voltage of 8.2V, this Zener diode ensures reliable performance and stability. Trust in Diodes Incorporated's expertise in semiconductor technology to deliver superior products that exceed expectations. Choose the ZM4738A-13 for unmatched value and benefits in your circuit designs.

Feature Benefit Bullets

Package Body Material: GLASS

The glass package body provides durability and protection for the zener diode, ensuring long-lasting performance.

Working Test Current: 31 mA

The high working test current allows the zener diode to handle a significant amount of current without damage, making it suitable for a variety of applications.

Surface Mount: YES

The surface mount capability makes installation of the zener diode easy and efficient, particularly in compact electronic circuits.

Maximum Voltage Tolerance: 5 %

The tight maximum voltage tolerance ensures precise voltage regulation, improving the overall performance of electronic circuits.

Maximum Operating Temperature: 200 °C

With a high maximum operating temperature, this zener diode can withstand elevated temperatures, making it suitable for use in various environments.

Maximum Power Dissipation: 1 W

The high maximum power dissipation capability allows the zener diode to handle significant power levels, making it reliable for demanding applications.

Nominal Reference Voltage: 8.2 V

The precise nominal reference voltage of 8.2V ensures accurate voltage regulation, making this zener diode suitable for critical electronic systems.

Technical Specifications

Zener Diodes ZM4738A-13 attributes and parameters. Explore more Zener Diodes devices from Diodes Incorporated

Specs

Case Connection:

ISOLATED

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Dynamic Impedance:

4.5 ohm

JESD-30 Code:

O-LELF-R2

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

200 Cel

Package Body Material:

GLASS

Package Shape:

Package Style (Meter):

LONG FORM

Polarity:

UNIDIRECTIONAL

Maximum Power Dissipation:

1 W

Qualification:

Not Qualified

Nominal Reference Voltage:

8.2 V

Sub-Category:

Voltage Reference Diodes

Surface Mount:

YES

Technology:

ZENER

Terminal Form:

Terminal Position:

END

Maximum Voltage Tolerance:

5 %

Working Test Current:

31 mA

Trade Compliance

ZM4738A-13 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

Manufacturer Highlights

Diodes Incorporated

Diodes Incorporated is an international leader in the design and production of high-grade application specific standard products utilized in a wide variety of industries. The company has developed cutting-edge technology that enhances the performance and reliability of components for consumer, industrial, automotive and communication applications. Established in 1959, Diodes Incorporated has been providing superior services to its customers by creating innovative solutions from their world-class manufacturing centers located around the world. Their commitment to delivering quality products extends to their selection of materials which are carefully chosen to meet the demand of both commercial and military requirements.

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Management team

Chairman and CEO

Keh-Shew Lu 

CFO

Brett R. Whitmire 

Lead Director

Angie Chen Button

Manufacturer fab locations 11

Fab name Location Fab Initiation Wafer Capacity

Fab 1

Fabrication

Fab Initiation

1987

China

Shanghai

Wafer Capacity

40,000

1987

40,000

Zizhu Fab 1

Fabrication

Fab Initiation

2013

China

Shanghai

Wafer Capacity

18,500

2013

18,500

G Fab

Fabrication

Fab Initiation

2008

UK

Greenock

Wafer Capacity

8,000

2008

8,000

Keelung Fab

Fabrication

Fab Initiation

1990

Taiwan

Keelung

Wafer Capacity

58,000

1990

58,000

Wuxi Fab

Fabrication

Fab Initiation

2004

China

Wuxi

Wafer Capacity

190,000

2004

190,000

Shanghai Fab

Fabrication

Fab Initiation

1993

China

Shanghai

Wafer Capacity

110,000

1993

110,000

G Fab

Fabrication

Fab Initiation

1970

UK

Greenock

Wafer Capacity

22,000

1970

22,000

Hsinchu Fab

Fabrication

Fab Initiation

1998

Taiwan

Hsinchu

Wafer Capacity

38,000

1998

38,000

Fab 2

Fabrication

Fab Initiation

2003

China

Shanghai

Wafer Capacity

20,000

2003

20,000

SPFAB

Fabrication

Fab Initiation

1995

USA

South Portland

Wafer Capacity

17,000

1995

17,000

N/A

Fabrication

Fab Initiation

1982

UK

Oldham

Wafer Capacity

4,000

1982

4,000

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