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US1DWFQ-7

Diodes Incorporated

US1DWFQ-7 by Diodes Incorporated

US1DWFQ-7 by Diodes Inc. is a single rectifier diode with a max reverse recovery time of 0.035 us and a max output current of 1 A. It is designed for efficiency applications, operating b/w -55 to 150 °C, with a peak reflow temperature of 260 C.

Median Price

$0.135

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Verical

USA . 5,115,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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10k+ parts

$0.135

5,115,000

-

-

-

$0.135

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 19 parts In-Stock

1+ parts

$0.178

100+ parts

-

1k+ parts

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10k+ parts

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19

$0.178

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-

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Vyrian

USA . 2,271,032 parts In-Stock

1+ parts

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100+ parts

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1k+ parts

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10k+ parts

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2,271,032

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-

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NAC Semi

USA . 15,000 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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10k+ parts

$0.250

15,000

-

-

-

$0.250

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Ampacity Inc.

Singapore . 2,169,216 parts In-Stock

1+ parts

$0.108

100+ parts

-

1k+ parts

-

10k+ parts

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2,169,216

$0.108

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-

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Continental Prestige Electronics

USA . 6,871 parts In-Stock

1+ parts

$0.178

100+ parts

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1k+ parts

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10k+ parts

$0.174

6,871

$0.178

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-

$0.174

Argo Parts USA

USA . 1,158 parts In-Stock

1+ parts

$0.178

100+ parts

-

1k+ parts

-

10k+ parts

$0.173

1,158

$0.178

-

-

$0.173

Netroflash

USA . 50 parts In-Stock

1+ parts

$0.178

100+ parts

$0.174

1k+ parts

-

10k+ parts

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50

$0.178

$0.174

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Eastek

USA . 3,000 parts In-Stock

1+ parts

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100+ parts

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1k+ parts

$0.170

10k+ parts

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3,000

-

-

$0.170

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Overview

Enhance the efficiency of your electronic devices with the US1DWFQ-7 by Diodes Incorporated. As a leading manufacturer in the industry, Diodes Incorporated guarantees top-notch quality and reliability for all their products. The US1DWFQ-7 diode offers a fast reverse recovery time and low reverse current, making it ideal for a wide range of applications where efficiency is key. With its high breakdown voltage and small outline package style, this rectifier diode provides excellent performance while saving valuable space. Upgrade your electronics with the US1DWFQ-7 and experience the superior value and benefits it brings to your projects.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material ensures durability and reliability of the diode.

Config: SINGLE

The single configuration simplifies circuit design and reduces complexity.

Surface Mount: YES

This allows for easy and convenient mounting on circuit boards.

Maximum Reverse Recovery Time: 0.035 us

The fast reverse recovery time ensures efficient switching and performance of the diode.

Maximum Reverse Current: 5 uA

Low reverse current minimizes power losses and improves overall efficiency.

Package Shape: RECTANGULAR

The rectangular shape allows for efficient use of space in a circuit layout.

Reverse Test Voltage: 200 V

The high reverse test voltage makes the diode suitable for high voltage applications.

No. of Terminals: 2

Having 2 terminals simplifies the connection and integration of the diode into a circuit.

Package Style (Meter): SMALL OUTLINE

The small outline package style reduces the footprint of the diode and saves space.

Application: EFFICIENCY

Designed for efficiency, making it ideal for power conversion applications.

Maximum Operating Temperature: 150 °C

The high maximum operating temperature allows for reliable operation in various environments.

Minimum Operating Temperature: -55 °C

Suitable for operation in extreme temperatures, ensuring versatility and reliability.

Terminal Finish: MATTE TIN

The matte tin finish provides good conductivity and corrosion resistance.

Terminal Position: DUAL

The dual terminal position allows for versatile connection options in a circuit.

Minimum Breakdown Voltage: 200 V

The high minimum breakdown voltage ensures protection against voltage spikes and surges.

Peak Reflow Temperature °C: 260

Can withstand high reflow temperatures during manufacturing processes.

Reference Standard: AEC-Q101

Compliance with AEC-Q101 standard ensures high quality and reliability for automotive applications.

Diode Type: RECTIFIER DIODE

Rectifier diode type is suitable for converting AC to DC, making it versatile in various applications.

Maximum Forward Voltage (VF): 0.95 V

Low forward voltage drop reduces power losses and improves efficiency.

Maximum Output Current: 1 A

Can handle high output currents, suitable for various power applications.

Terminal Form: FLAT

The flat terminal form ensures easy and secure connections in a circuit.

Maximum Repetitive Peak Reverse Voltage: 200 V

High maximum repetitive peak reverse voltage makes it suitable for high voltage applications.

Maximum Non Repetitive Peak Forward Current: 30 A

Can handle high non-repetitive peak forward currents, making it reliable in transient conditions.

Diode Element Material: SILICON

Silicon diode element material ensures high efficiency and reliability in power applications.

Technical Specifications

Diodes & Rectifiers US1DWFQ-7 attributes and parameters. Explore more Diodes & Rectifiers devices from Diodes Incorporated

Specs

Additional Features:

FREE WHEELING DIODE, HIGH RELIABILITY, LOW POWER LOSS, LOW LEAKAGE CURRENT

Application:

EFFICIENCY

Minimum Breakdown Voltage:

200 V

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

.95 V

JESD-30 Code:

R-PDSO-F2

JESD-609 Code:

e3

Maximum Non Repetitive Peak Forward Current:

30 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Maximum Output Current:

1 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Reference Standard:

AEC-Q101

Maximum Repetitive Peak Reverse Voltage:

200 V

Maximum Reverse Current:

5 uA

Maximum Reverse Recovery Time:

.035 us

Reverse Test Voltage:

200 V

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Trade Compliance

US1DWFQ-7 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

PCN

Manufacturer Highlights

Diodes Incorporated

Diodes Incorporated is an international leader in the design and production of high-grade application specific standard products utilized in a wide variety of industries. The company has developed cutting-edge technology that enhances the performance and reliability of components for consumer, industrial, automotive and communication applications. Established in 1959, Diodes Incorporated has been providing superior services to its customers by creating innovative solutions from their world-class manufacturing centers located around the world. Their commitment to delivering quality products extends to their selection of materials which are carefully chosen to meet the demand of both commercial and military requirements.

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Management team

Chairman and CEO

Keh-Shew Lu 

CFO

Brett R. Whitmire 

Lead Director

Angie Chen Button

Manufacturer fab locations 11

Fab name Location Fab Initiation Wafer Capacity

Fab 1

Fabrication

Fab Initiation

1987

China

Shanghai

Wafer Capacity

40,000

1987

40,000

Zizhu Fab 1

Fabrication

Fab Initiation

2013

China

Shanghai

Wafer Capacity

18,500

2013

18,500

G Fab

Fabrication

Fab Initiation

2008

UK

Greenock

Wafer Capacity

8,000

2008

8,000

Keelung Fab

Fabrication

Fab Initiation

1990

Taiwan

Keelung

Wafer Capacity

58,000

1990

58,000

Wuxi Fab

Fabrication

Fab Initiation

2004

China

Wuxi

Wafer Capacity

190,000

2004

190,000

Shanghai Fab

Fabrication

Fab Initiation

1993

China

Shanghai

Wafer Capacity

110,000

1993

110,000

G Fab

Fabrication

Fab Initiation

1970

UK

Greenock

Wafer Capacity

22,000

1970

22,000

Hsinchu Fab

Fabrication

Fab Initiation

1998

Taiwan

Hsinchu

Wafer Capacity

38,000

1998

38,000

Fab 2

Fabrication

Fab Initiation

2003

China

Shanghai

Wafer Capacity

20,000

2003

20,000

SPFAB

Fabrication

Fab Initiation

1995

USA

South Portland

Wafer Capacity

17,000

1995

17,000

N/A

Fabrication

Fab Initiation

1982

UK

Oldham

Wafer Capacity

4,000

1982

4,000

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