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SMCJ33CA-13

Diodes Incorporated

SMCJ33CA-13 by Diodes Incorporated

SMCJ33CA-13 by Diodes Inc. is a single bidirectional transient suppression diode with 1500W peak power dissipation, 39.45V breakdown voltage, and 42.2V max breakdown voltage. It is used for surge protection in electronic circuits requiring high clamping voltages and fast response times.

Median Price

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Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

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ComSIT Distribution GmbH

Germany . 3,000 parts In-Stock

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ComSIT USA

USA . 3,000 parts In-Stock

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Vyrian

USA . 2,656 parts In-Stock

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Nova Conductors

Japan . 73 parts In-Stock

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Corohmni

South Africa . 798 parts In-Stock

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$0.021

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798

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Ampacity Inc.

Singapore . 1,033 parts In-Stock

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$1.010

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$1.010

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AZTECH Wire

Italy . 733 parts In-Stock

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$10.616

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733

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Continental Prestige Electronics

USA . 3,711 parts In-Stock

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Argo Parts USA

USA . 2,069 parts In-Stock

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Glotronic Ltd.

UK . 1,117 parts In-Stock

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Aranea Global

USA . 100 parts In-Stock

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Overview

Looking for reliable transient suppression devices? Look no further than the SMCJ33CA-13 by Diodes Incorporated. With a maximum non-repetitive peak reverse power dissipation of 1500W and a nominal breakdown voltage of 39.45V, this product offers superior protection against voltage spikes. Whether you're in the automotive, industrial, or telecommunications industry, this single-configured diode is perfect for safeguarding your sensitive electronics. Trust in Diodes Incorporated's reputation for quality and innovation to provide you with the peace of mind you need. Choose the SMCJ33CA-13 for unmatched value and protection for your valuable equipment.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes this product lightweight and durable, suitable for various applications.

Config: SINGLE

The single configuration simplifies installation and maintenance, making it an efficient choice for users.

Surface Mount: YES

The surface mount feature allows for easy and secure mounting on PCBs, saving space and improving overall product performance.

Maximum Non Repetitive Peak Reverse Power Dissipation: 1500 W

With a high power dissipation capacity, this product can effectively protect against transient overvoltage events.

Nominal Breakdown Voltage: 39.45 V

The nominal breakdown voltage ensures reliable protection against voltage spikes within the specified range.

Package Shape: RECTANGULAR

The rectangular shape provides a compact design that fits well in tight spaces, making it versatile for different setups.

No. of Terminals: 2

The two terminals offer a simple connection setup, enhancing user-friendliness and ease of installation.

Package Style (Meter): SMALL OUTLINE

The small outline package style saves space on the PCB, making it ideal for applications where size is a concern.

Terminal Finish: TIN LEAD

The tin lead terminal finish ensures good conductivity and solderability for stable performance.

Terminal Position: DUAL

Dual terminal positions allow for versatility in installation options, accommodating different project requirements.

Minimum Breakdown Voltage: 36.7 V

The minimum breakdown voltage rating provides protection against lower-voltage transients, enhancing the product's reliability.

Peak Reflow Temperature °C: 260

With a high peak reflow temperature, this product can withstand harsh soldering processes without damage.

Maximum Breakdown Voltage: 42.2 V

The maximum breakdown voltage rating ensures protection against higher-voltage transients, expanding the product's applicability.

Diode Type: TRANS VOLTAGE SUPPRESSOR DIODE

The use of trans voltage suppressor diodes in this product ensures efficient transient suppression for enhanced circuit protection.

Technology: AVALANCHE

The avalanche technology employed in this product enables rapid response to transient events, improving overall system reliability.

Terminal Form: C BEND

The C bend terminal form offers a secure connection for stable performance and ease of installation.

Maximum Repetitive Peak Reverse Voltage: 33 V

The high maximum repetitive peak reverse voltage rating makes this product suitable for handling frequent voltage fluctuations.

Polarity: BIDIRECTIONAL

The bidirectional polarity allows for protection against transient events from both directions, making it versatile for various applications.

Maximum Clamping Voltage: 53.3 V

The maximum clamping voltage specification ensures effective suppression of transient spikes, safeguarding connected devices.

Diode Element Material: SILICON

The use of silicon diode element material provides high performance and reliability for consistent transient suppression.

Technical Specifications

Transient Suppression Devices SMCJ33CA-13 attributes and parameters. Explore more Transient Suppression Devices devices from Diodes Incorporated

Specs

Maximum Breakdown Voltage:

42.2 V

Minimum Breakdown Voltage:

36.7 V

Nominal Breakdown Voltage:

39.45 V

Maximum Clamping Voltage:

53.3 V

Config:

SINGLE

Diode Element Material:

SILICON

JESD-30 Code:

R-PDSO-C2

JESD-609 Code:

e0

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Reverse Power Dissipation:

1500 W

No. of Elements:

1

No. of Terminals:

2

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity:

BIDIRECTIONAL

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

33 V

Sub-Category:

Transient Suppressors

Surface Mount:

YES

Technology:

AVALANCHE

Terminal Finish:

TIN LEAD

Terminal Form:

Terminal Position:

Trade Compliance

SMCJ33CA-13 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

Manufacturer Highlights

Diodes Incorporated

Diodes Incorporated is an international leader in the design and production of high-grade application specific standard products utilized in a wide variety of industries. The company has developed cutting-edge technology that enhances the performance and reliability of components for consumer, industrial, automotive and communication applications. Established in 1959, Diodes Incorporated has been providing superior services to its customers by creating innovative solutions from their world-class manufacturing centers located around the world. Their commitment to delivering quality products extends to their selection of materials which are carefully chosen to meet the demand of both commercial and military requirements.

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Management team

Chairman and CEO

Keh-Shew Lu 

CFO

Brett R. Whitmire 

Lead Director

Angie Chen Button

Manufacturer fab locations 11

Fab name Location Fab Initiation Wafer Capacity

Fab 1

Fabrication

Fab Initiation

1987

China

Shanghai

Wafer Capacity

40,000

1987

40,000

Zizhu Fab 1

Fabrication

Fab Initiation

2013

China

Shanghai

Wafer Capacity

18,500

2013

18,500

G Fab

Fabrication

Fab Initiation

2008

UK

Greenock

Wafer Capacity

8,000

2008

8,000

Keelung Fab

Fabrication

Fab Initiation

1990

Taiwan

Keelung

Wafer Capacity

58,000

1990

58,000

Wuxi Fab

Fabrication

Fab Initiation

2004

China

Wuxi

Wafer Capacity

190,000

2004

190,000

Shanghai Fab

Fabrication

Fab Initiation

1993

China

Shanghai

Wafer Capacity

110,000

1993

110,000

G Fab

Fabrication

Fab Initiation

1970

UK

Greenock

Wafer Capacity

22,000

1970

22,000

Hsinchu Fab

Fabrication

Fab Initiation

1998

Taiwan

Hsinchu

Wafer Capacity

38,000

1998

38,000

Fab 2

Fabrication

Fab Initiation

2003

China

Shanghai

Wafer Capacity

20,000

2003

20,000

SPFAB

Fabrication

Fab Initiation

1995

USA

South Portland

Wafer Capacity

17,000

1995

17,000

N/A

Fabrication

Fab Initiation

1982

UK

Oldham

Wafer Capacity

4,000

1982

4,000

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