Loading...

SMAJ51CAQ-13-F

Diodes Incorporated

SMAJ51CAQ-13-F by Diodes Incorporated

SMAJ51CAQ-13-F by Diodes Inc. is a single bidirectional transient suppression diode with 51V peak reverse voltage and 400W non-repetitive power dissipation. It is designed for use in automotive applications, conforming to AEC-Q101 standards, ISO 7637-2, and ISO 10605 for protection against voltage transients.

Median Price

$0.188

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Adafruit Industries

USA . 70 parts In-Stock

1+ parts

$0.188

100+ parts

$0.171

1k+ parts

$0.154

10k+ parts

-

70

$0.188

$0.171

$0.154

-

Mouser Electronics

USA . 4,200 parts In-Stock

1+ parts

$0.570

100+ parts

$0.225

1k+ parts

$0.151

10k+ parts

$0.090

4,200

$0.570

$0.225

$0.151

$0.090

Verical

USA . 5,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.101

5,000

-

-

-

$0.101

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Advanced Electronics

New Zealand . 70 parts In-Stock

1+ parts

$0.188

100+ parts

$0.171

1k+ parts

$0.154

10k+ parts

-

70

$0.188

$0.171

$0.154

-

Component Stockers USA

USA . 6,629 parts In-Stock

1+ parts

$0.420

100+ parts

$0.190

1k+ parts

$0.120

10k+ parts

-

6,629

$0.420

$0.190

$0.120

-

Overview

Enhance your electronic systems with the SMAJ51CAQ-13-F by Diodes Incorporated, the perfect solution for transient suppression. Known for their top-quality products, Diodes Incorporated delivers reliable and efficient devices that meet the highest standards in the industry. This diode's bidirectional polarity and avalanche technology make it ideal for a wide range of applications, providing protection against voltage spikes and ensuring smooth operation. Invest in the SMAJ51CAQ-13-F today and experience the value and benefits it brings to your projects.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides high durability and reliability, making the device suitable for harsh environments.

Surface Mount: YES

Allows for easy and convenient installation on circuit boards.

Maximum Non Repetitive Peak Reverse Power Dissipation: 400 W

Ensures efficient protection against transient voltage spikes and surges.

Minimum Breakdown Voltage: 56.7 V

Offers reliable voltage protection to prevent damage to connected electronics.

Reference Standard: AEC-Q101; ISO 7637-2; ISO 10605

Compliance with industry standards ensures the device meets quality and safety requirements.

Diode Type: TRANS VOLTAGE SUPPRESSOR DIODE

Specific diode type designed for transient voltage suppression applications, offering superior protection.

Technology: AVALANCHE

Avalanche technology allows for faster response times and higher energy handling capabilities.

Technical Specifications

Transient Suppression Devices SMAJ51CAQ-13-F attributes and parameters. Explore more Transient Suppression Devices devices from Diodes Incorporated

Specs

Additional Features:

EXCELLENT CLAMPING CAPABILITY, HIGH RELIABILITY

Maximum Breakdown Voltage:

62.7 V

Minimum Breakdown Voltage:

56.7 V

Config:

SINGLE

Diode Element Material:

SILICON

JESD-30 Code:

R-PDSO-C2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Reverse Power Dissipation:

400 W

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity:

BIDIRECTIONAL

Maximum Power Dissipation:

1 W

Reference Standard:

AEC-Q101; ISO 7637-2; ISO 10605

Maximum Repetitive Peak Reverse Voltage:

51 V

Surface Mount:

YES

Technology:

AVALANCHE

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

SMAJ51CAQ-13-F Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

PCN

Manufacturer Highlights

Diodes Incorporated

Diodes Incorporated is an international leader in the design and production of high-grade application specific standard products utilized in a wide variety of industries. The company has developed cutting-edge technology that enhances the performance and reliability of components for consumer, industrial, automotive and communication applications. Established in 1959, Diodes Incorporated has been providing superior services to its customers by creating innovative solutions from their world-class manufacturing centers located around the world. Their commitment to delivering quality products extends to their selection of materials which are carefully chosen to meet the demand of both commercial and military requirements.

previous next
The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

Chairman and CEO

Keh-Shew Lu 

CFO

Brett R. Whitmire 

Lead Director

Angie Chen Button

Manufacturer fab locations 11

Fab name Location Fab Initiation Wafer Capacity

Fab 1

Fabrication

Fab Initiation

1987

China

Shanghai

Wafer Capacity

40,000

1987

40,000

Zizhu Fab 1

Fabrication

Fab Initiation

2013

China

Shanghai

Wafer Capacity

18,500

2013

18,500

G Fab

Fabrication

Fab Initiation

2008

UK

Greenock

Wafer Capacity

8,000

2008

8,000

Keelung Fab

Fabrication

Fab Initiation

1990

Taiwan

Keelung

Wafer Capacity

58,000

1990

58,000

Wuxi Fab

Fabrication

Fab Initiation

2004

China

Wuxi

Wafer Capacity

190,000

2004

190,000

Shanghai Fab

Fabrication

Fab Initiation

1993

China

Shanghai

Wafer Capacity

110,000

1993

110,000

G Fab

Fabrication

Fab Initiation

1970

UK

Greenock

Wafer Capacity

22,000

1970

22,000

Hsinchu Fab

Fabrication

Fab Initiation

1998

Taiwan

Hsinchu

Wafer Capacity

38,000

1998

38,000

Fab 2

Fabrication

Fab Initiation

2003

China

Shanghai

Wafer Capacity

20,000

2003

20,000

SPFAB

Fabrication

Fab Initiation

1995

USA

South Portland

Wafer Capacity

17,000

1995

17,000

N/A

Fabrication

Fab Initiation

1982

UK

Oldham

Wafer Capacity

4,000

1982

4,000

Category top products 20

Authentic purchasing experiences

Partstack™ will investigate all reported instances of potential suspect/counterfeit part listings.

Similar products 20