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SDM4A30EP3-7B

Diodes Incorporated

SDM4A30EP3-7B by Diodes Incorporated

SDM4A30EP3-7B by Diodes Inc. is a single Schottky rectifier diode with a max reverse voltage of 30V and forward current of 4A. It operates efficiently with a max power dissipation of 2.1W, suitable for applications requiring high temperature tolerance up to 150°C such as power supply units.

Median Price

$0.362

Lifecycle Status

Suppliers In-Stock

8

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 10,000 parts In-Stock

1+ parts

$0.500

100+ parts

$0.275

1k+ parts

$0.155

10k+ parts

$0.124

10,000

$0.500

$0.275

$0.155

$0.124

Newark

USA . 9,990 parts In-Stock

1+ parts

$0.511

100+ parts

$0.293

1k+ parts

$0.205

10k+ parts

-

9,990

$0.511

$0.293

$0.205

-

Verical

USA . 60,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.106

60,000

-

-

-

$0.106

Avnet

USA . 10,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

10,000

-

-

-

-

Element14

Singapore . 9,990 parts In-Stock

1+ parts

-

100+ parts

$0.209

1k+ parts

$0.170

10k+ parts

$0.159

9,990

-

$0.209

$0.170

$0.159

RS (Exports)

UK . 9,950 parts In-Stock

1+ parts

-

100+ parts

$0.538

1k+ parts

$0.388

10k+ parts

$0.369

9,950

-

$0.538

$0.388

$0.369

Farnell

UK . 9,870 parts In-Stock

1+ parts

-

100+ parts

$0.225

1k+ parts

$0.117

10k+ parts

$0.100

9,870

-

$0.225

$0.117

$0.100

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

NAC Semi

USA . 40,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.146

40,000

-

-

-

$0.146

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Continental Prestige Electronics

USA . 9,990 parts In-Stock

1+ parts

$0.186

100+ parts

$0.134

1k+ parts

$0.112

10k+ parts

$0.109

9,990

$0.186

$0.134

$0.112

$0.109

Overview

Discover the power of efficiency with the SDM4A30EP3-7B by Diodes Incorporated. This rectifier diode offers superior quality and reliability, making it a top choice for applications requiring high performance. With a maximum output current of 4A and a maximum forward voltage of 0.57V, this chip carrier package delivers optimal results while operating at temperatures ranging from -55°C to 150°C. Trust in Diodes Incorporated to provide you with the best technology for your needs. Experience the difference with the SDM4A30EP3-7B today.

Feature Benefit Bullets

Config: SINGLE

Single configuration simplifies circuit design and installation.

Surface Mount: YES

Surface mount design saves space and allows for easier PCB assembly.

Maximum Reverse Current: 250 uA

Low maximum reverse current minimizes power loss and improves efficiency.

Package Shape: RECTANGULAR

Rectangular package shape is standard and easy to work with in various applications.

Reverse Test Voltage: 30 V

High reverse test voltage provides ample protection against reverse voltage.

No. of Terminals: 2

Having only 2 terminals simplifies installation and reduces chances of errors.

Package Style: CHIP CARRIER

Chip carrier package style offers good thermal properties and compact size.

Application: EFFICIENCY

Designed for efficiency applications, making it suitable for various power conversion needs.

Maximum Operating Temperature: 150 °C

High maximum operating temperature allows for reliable operation in harsh environments.

Minimum Operating Temperature: -55 °C

Low minimum operating temperature ensures reliable performance even in extreme cold conditions.

Terminal Finish: NICKEL GOLD

Nickel gold terminal finish ensures good conductivity and corrosion resistance.

Terminal Position: BOTTOM

Bottom terminal position makes it easy to mount and connect in a circuit.

Case Connection: ANODE

Anode case connection simplifies circuit design and prevents reverse voltage issues.

Maximum Power Dissipation: 2.1 W

High maximum power dissipation capability allows for handling higher power loads.

Peak Reflow Temperature °C: 260

Can withstand high peak reflow temperatures during soldering process.

Diode Type: RECTIFIER DIODE

Rectifier diode type ensures efficient rectification of AC to DC current.

Maximum Forward Voltage (VF): 0.57 V

Low maximum forward voltage drop ensures minimal power loss during conduction.

Maximum Output Current: 4 A

High maximum output current capability allows for handling higher loads.

Technology: SCHOTTKY

Schottky technology provides lower forward voltage drop and faster switching speed.

Terminal Form: NO LEAD

No lead terminal form is environmentally friendly and easy to handle.

Maximum Repetitive Peak Reverse Voltage: 30 V

High maximum repetitive peak reverse voltage protection ensures durability and reliability.

Maximum Non Repetitive Peak Forward Current: 32 A

High maximum non-repetitive peak forward current capability allows for handling surge currents.

Diode Element Material: SILICON

Silicon diode element material provides good reliability and efficiency in rectification process.

Technical Specifications

Diodes & Rectifiers SDM4A30EP3-7B attributes and parameters. Explore more Diodes & Rectifiers devices from Diodes Incorporated

Specs

Additional Features:

LOW LEAKAGE CURRENT

Application:

EFFICIENCY

Case Connection:

ANODE

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

.57 V

JESD-30 Code:

R-XBCC-N2

JESD-609 Code:

e4

Maximum Non Repetitive Peak Forward Current:

32 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Maximum Output Current:

4 A

Package Body Material:

UNSPECIFIED

Package Shape:

Package Style (Meter):

CHIP CARRIER

Peak Reflow Temperature (C):

260

Maximum Power Dissipation:

2.1 W

Maximum Repetitive Peak Reverse Voltage:

30 V

Maximum Reverse Current:

250 uA

Reverse Test Voltage:

30 V

Surface Mount:

YES

Technology:

SCHOTTKY

Terminal Finish:

NICKEL GOLD

Terminal Form:

Terminal Position:

Trade Compliance

SDM4A30EP3-7B Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

Manufacturer Highlights

Diodes Incorporated

Diodes Incorporated is an international leader in the design and production of high-grade application specific standard products utilized in a wide variety of industries. The company has developed cutting-edge technology that enhances the performance and reliability of components for consumer, industrial, automotive and communication applications. Established in 1959, Diodes Incorporated has been providing superior services to its customers by creating innovative solutions from their world-class manufacturing centers located around the world. Their commitment to delivering quality products extends to their selection of materials which are carefully chosen to meet the demand of both commercial and military requirements.

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Management team

Chairman and CEO

Keh-Shew Lu 

CFO

Brett R. Whitmire 

Lead Director

Angie Chen Button

Manufacturer fab locations 11

Fab name Location Fab Initiation Wafer Capacity

Fab 1

Fabrication

Fab Initiation

1987

China

Shanghai

Wafer Capacity

40,000

1987

40,000

Zizhu Fab 1

Fabrication

Fab Initiation

2013

China

Shanghai

Wafer Capacity

18,500

2013

18,500

G Fab

Fabrication

Fab Initiation

2008

UK

Greenock

Wafer Capacity

8,000

2008

8,000

Keelung Fab

Fabrication

Fab Initiation

1990

Taiwan

Keelung

Wafer Capacity

58,000

1990

58,000

Wuxi Fab

Fabrication

Fab Initiation

2004

China

Wuxi

Wafer Capacity

190,000

2004

190,000

Shanghai Fab

Fabrication

Fab Initiation

1993

China

Shanghai

Wafer Capacity

110,000

1993

110,000

G Fab

Fabrication

Fab Initiation

1970

UK

Greenock

Wafer Capacity

22,000

1970

22,000

Hsinchu Fab

Fabrication

Fab Initiation

1998

Taiwan

Hsinchu

Wafer Capacity

38,000

1998

38,000

Fab 2

Fabrication

Fab Initiation

2003

China

Shanghai

Wafer Capacity

20,000

2003

20,000

SPFAB

Fabrication

Fab Initiation

1995

USA

South Portland

Wafer Capacity

17,000

1995

17,000

N/A

Fabrication

Fab Initiation

1982

UK

Oldham

Wafer Capacity

4,000

1982

4,000

Category top products 20

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